Abstract: The present invention provides a cationic electrodeposition coating composition that has both good anti-cissing property and good coating film appearance. This is a cationic electrodeposition coating composition containing a silicone compound (A) having an SP value of more than 10.5 and 15.0 or less, and a film forming resin (B), wherein the silicone compound (A) is contained in an amount of 0.01 parts by mass or more and 4.5 parts by mass or less per 100 parts by mass of the resin solid content of the film forming resin (B). For example, the silicone compound (A) is at least one species selected from the group consisting of a polyether modified silicone compound (A-1), a polyester modified silicone compound (A-2), and a polyacrylic modified silicone compound (A-3).

Abstract: The present invention provides a cationic electrodeposition coating composition that has both good anti-cissing property and good coating film appearance. This is a cationic electrodeposition coating composition containing a silicone compound (A) having an SP value of more than 10.5 and 15.0 or less, and a film forming resin (B), wherein the silicone compound (A) is contained in an amount of 0.01 parts by mass or more and 4.5 parts by mass or less per 100 parts by mass of the resin solid content of the film forming resin (B). For example, the silicone compound (A) is at least one species selected from the group consisting of a polyether modified silicone compound (A-1), a polyester modified silicone compound (A-2), and a polyacrylic modified silicone compound (A-3).

Abstract: Provided is a semiconductor device having improved performance. A semiconductor substrate is formed with unit LDMOSFET elements. The unit LDMOSFET elements have respective source regions electrically coupled to each other via a first source interconnect line and a second source interconnect line. The unit LDMOSFET elements have respective gate electrodes electrically coupled to each other via a first gate interconnect line and also electrically coupled to a second gate interconnect line in the same layer as that of the second source interconnect line via the first gate interconnect line. The unit LDMOSFET elements have respective drain regions electrically coupled to a back surface electrode via a conductive plug embedded in a trench of the semiconductor substrate. Each of the first source interconnect line and the first gate interconnect line has a thickness smaller than that of the second source interconnect line. Over the plug, the first gate interconnect line extends.

Abstract: Provided is a semiconductor device having improved performance. A semiconductor substrate is formed with unit LDMOSFET elements. The unit LDMOSFET elements have respective source regions electrically coupled to each other via a first source interconnect line and a second source interconnect line. The unit LDMOSFET elements have respective gate electrodes electrically coupled to each other via a first gate interconnect line and also electrically coupled to a second gate interconnect line in the same layer as that of the second source interconnect line via the first gate interconnect line. The unit LDMOSFET elements have respective drain regions electrically coupled to a back surface electrode via a conductive plug embedded in a trench of the semiconductor substrate. Each of the first source interconnect line and the first gate interconnect line has a thickness smaller than that of the second source interconnect line. Over the plug, the first gate interconnect line extends.

Abstract: Provided is a semiconductor device having improved performance. A semiconductor substrate is formed with unit LDMOSFET elements. The unit LDMOSFET elements have respective source regions electrically coupled to each other via a first source interconnect line and a second source interconnect line. The unit LDMOSFET elements have respective gate electrodes electrically coupled to each other via a first gate interconnect line and also electrically coupled to a second gate interconnect line in the same layer as that of the second source interconnect line via the first gate interconnect line. The unit LDMOSFET elements have respective drain regions electrically coupled to a back surface electrode via a conductive plug embedded in a trench of the semiconductor substrate. Each of the first source interconnect line and the first gate interconnect line has a thickness smaller than that of the second source interconnect line. Over the plug, the first gate interconnect line extends.

Abstract: Provided is a semiconductor device having improved performance. A semiconductor substrate is formed with unit LDMOSFET elements. The unit LDMOSFET elements have respective source regions electrically coupled to each other via a first source interconnect line and a second source interconnect line. The unit LDMOSFET elements have respective gate electrodes electrically coupled to each other via a first gate interconnect line and also electrically coupled to a second gate interconnect line in the same layer as that of the second source interconnect line via the first gate interconnect line. The unit LDMOSFET elements have respective drain regions electrically coupled to a back surface electrode via a conductive plug embedded in a trench of the semiconductor substrate. Each of the first source interconnect line and the first gate interconnect line has a thickness smaller than that of the second source interconnect line. Over the plug, the first gate interconnect line extends.