Patents by Inventor Keisuke Hirofuji

Keisuke Hirofuji has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10833087
    Abstract: A semiconductor device comprises a memory storage component and a transistor in operable communication with the memory storage element. The transistor comprises a source region, a drain region, a gate electrode between the source region and the drain region, a charge trapping material surrounding at least an upper portion of the gate electrode, and an oxide material on sides of the charge trapping material. Related systems and methods are also disclosed.
    Type: Grant
    Filed: August 21, 2018
    Date of Patent: November 10, 2020
    Assignee: Micron Technology, Inc.
    Inventors: Fredrick D. Fishburn, Haitao Liu, Soichi Sugiura, Oscar O. Enomoto, Mark A. Zaleski, Keisuke Hirofuji, Makoto Morino, Ichiro Abe, Yoshiyuki Nanjo, Atsuko Otsuka
  • Publication number: 20200066726
    Abstract: A semiconductor device comprises a memory storage component and a transistor in operable communication with the memory storage element. The transistor comprises a source region, a drain region, a gate electrode between the source region and the drain region, a charge trapping material surrounding at least an upper portion of the gate electrode, and an oxide material on sides of the charge trapping material. Related systems and methods are also disclosed.
    Type: Application
    Filed: August 21, 2018
    Publication date: February 27, 2020
    Inventors: Fredrick D. Fishburn, Haitao Liu, Soichi Sugiura, Oscar O. Enomoto, Mark A. Zaleski, Keisuke Hirofuji, Makoto Morino, Ichiro Abe, Yoshiyuki Nanjo, Atsuko Otsuka