Abstract: A semiconductor device includes a bus control circuit that controls access to a slave shared by a plurality of masters. The bus control circuit includes a plurality of priority determination circuits corresponding to the plurality of masters. The priority determination circuit is configured to, when receiving an urgent access from a corresponding master, change a priority level signal included in an access request from the corresponding master to allocate a high priority level for emergency and allocate a low priority level to a master other than the corresponding master.

Abstract: A semiconductor device includes a bus control circuit that controls access to a slave shared by a plurality of masters. The bus control circuit includes a plurality of priority determination circuits corresponding to the plurality of masters. The priority determination circuit is configured to, when receiving an urgent access from a corresponding master, change a priority level signal included in an access request from the corresponding master to allocate a high priority level for emergency and allocate a low priority level to a master other than the corresponding master.

Abstract: A discharge inhibiting film is formed in an area corresponding to a space defined between adjacent electrode pairs on a surface of a cathode film of a front panel. The discharge inhibiting film is formed by a process using a paste, such as a printing process. The paste comprises, for example, a kneaded mixture of: (a) a powder of discharge inhibiting material such as TiO2 and Al2O3; (b) a glass powder such as PbO; (c) a resin such as ethyl cellulose; and (d) an organic solvent such as terpineol. The powders used here are not greater than 1 &mgr;m in average particle size. Further, for example, the viscosity of the paste is controlled to, e.g., 30 to 100 Pa·s. Such a paste is printed, dried and fired to produce the discharge inhibiting film.

Abstract: A discharge inhibiting film is formed in an area corresponding to a space defined between adjacent electrode pairs on a surface of a cathode film of a front panel. The discharge inhibiting film is formed by a process using a paste, such as a printing process. The paste comprises, for example, a kneaded mixture of: (a) a powder of discharge inhibiting material such as TiO2 and Al2O3; (b) a glass powder such as PbO; (c) a resin such as ethyl cellulose; and (d) an organic solvent such as terpineol. The powders used here are not greater than 1 &mgr;m in average particle size. Further, for example, the viscosity of the paste is controlled to, e.g., 30 to 100 Pa·s. Such a paste is printed, dried and fired to produce the discharge inhibiting film.