Abstract: Provided is a polishing pad comprising a polishing layer made of a polyurethane resin foam containing an isocyanate-terminated prepolymer, and a curing agent, wherein the ratio (NC80/NC40) of a weight proportion (NC80) of an amorphous phase content in the polishing layer measured at 80° C. by a pulsed NMR method to a weight proportion (NC40) of the amorphous phase content in the polishing layer measured at 40° C. by the pulsed NMR method is between 1.5 and 2.5.

Abstract: A headlight determination apparatus includes a camera device, a target light recognition device, and a changing device. The camera device captures an image ahead of a vehicle at a predetermined frame rate. The target light recognition device recognizes target light from the image captured by the camera device. The changing device changes a wavelength of headlight of the vehicle by using a predetermined period slower than the predetermined frame rate. When the wavelength of the headlight is different from a wavelength of the target light and/or when a period of the wavelength of the headlight does not match a period of the wavelength of the target light, the target light recognition device recognizes that there is target light other than the headlight in front of the vehicle and controls light distribution of the headlight when there is target light other than the headlight in front of the vehicle.

Abstract: The coil component includes a coil, a first core having a first magnetic permeability, and a second core having a second magnetic permeability lower than the first magnetic permeability. The first core and the second core form a magnetic path. The coil forms two or more winding windows. The first core contacts with an entirety of one side line extending in a second direction of each of the winding windows, and protrudes from both ends of one side line of at least one of the winding windows. The second core contacts with three side lines other than the one side line of each of the winding windows. A surface resistance of the first core between two points that are 20 mm away from each other is not less than 5 ? after a high-temperature storage test. A drive frequency of the coil component is not less than 20 kHz.

Abstract: A rotating electrical machine control device shifts a control system to synchronous five-pulse control when an operating point crosses a second boundary from a state in which asynchronous pulse-width modulation control is being executed, and shifts the control system to the asynchronous pulse-width modulation control when the operating point crosses a first boundary from a state in which the synchronous five-pulse control is being executed. The first boundary is set such that the number of switching pulses per unit rotational speed by the synchronous five-pulse control immediately before the operating point crosses the first boundary is smaller than the number of the switching pulses per unit rotational speed by the asynchronous pulse-width modulation control immediately after the operating point crosses the first boundary.

Abstract: Provided is a wireless LAN system in which an interference control signal transmitter that is provided in the surroundings of the wireless LAN base station and the wireless LAN terminal, and is configured to collect wireless environment information regarding the interfering AP/STA, and transmit, to the interfering AP/STA, an interference control signal that is to be used to set a transmission waiting period; and an interference control signal management device configured to collect the wireless environment information from the interference control signal transmitter, determine the interference control signal transmitter whose communication area includes the interfering AP/STA based on the wireless environment information, and control the determined interference control signal transmitter to transmit the interference control signal to be used to set the transmission waiting period that corresponds to a length of time of the communication between the wireless LAN base station and the wireless LAN terminal, wher

Abstract: A compound semiconductor substrate and a compound semiconductor device with high quality is provided. The compound semiconductor substrate includes a Si substrate with O concentration of 3*1017/cm3 or more and 3*1018/cm3 or less, a SiC layer formed on the Si substrate, a first nitride semiconductor layer made of AlxGa1-xN (0.1?x?1), formed on the SiC layer and including an insulating or semi-insulating layer, a second nitride semiconductor layer formed on the first nitride semiconductor layer and containing a C-GaNlayer, and an electronic traveling layer formed on the second nitride semiconductor layer and comprising of AlzGa1-zN (0?z<0.1). The sum total thickness of the first nitride semiconductor layer, the second nitride semiconductor layer and the electronic traveling layer is 6 micrometers or more and 10 micrometers or less.

Abstract: A compound semiconductor substrate and a method for manufacturing the same are provided to suppress surface roughness of a barrier layer while suppressing gate leak. A method for manufacturing of a compound semiconductor substrate comprises a step forming an electronic traveling layer consisting of a first nitride semiconductor, a step forming a barrier layer consisting of a second nitride semiconductor with a wider band gap than a band gap of the first nitride semiconductor on the electronic traveling layer, and a step forming a cap layer with an organometallic vapor phase epitaxy on the barrier layer and in contact with the barrier layer. The cap layer has a C concentration of 5*1017 atoms/cm3 or more and 1*1020 atoms/cm3 or less, and consists of a nitride semiconductor. During the step forming the cap layer, source gas of the nitride semiconductor forming the cap layer and hydrocarbon gas are introduced to a top surface of the barrier layer.

Abstract: A film forming apparatus and a film forming apparatus usage. The film forming apparatus has a film forming chamber, a substrate retaining part, a heating unit, a shower head, and a physical characteristics detector. The physical characteristics detector includes an irradiation part that irradiates a film formed on a surface of a substrate with a beam, a receiver to receive the beam reflected by the film, and a detection unit that detects physical characteristics of the film based on the beam received by the receiver. The shower head includes a supply plane facing the film forming plane, multiple discharge outlets provided in the supply plane, a main body to transport source gas to the multiple discharge outlets, a first transmissive part that transmits the beam emitted by the irradiation part, and a second transmissive part that transmits the reflected beam and is located at a different position than the first transmissive part.

Abstract: A compound semiconductor substrate includes a SiC (silicon carbide) layer, a AlN (aluminum nitride) buffer layer formed on the SiC layer, an Al (aluminum) nitride semiconductor layer formed on the AlN buffer layer, a composite layer formed on the Al nitride semiconductor layer, a GaN (gallium nitride) layer as an electron transition layer formed on the composite layer, and an Al nitride semiconductor layer as a barrier layer formed on the GaN layer. The composite layer includes C—GaN layers stacked in a vertical direction, and an AlN layer formed between the C—GaN layers.

Abstract: A compound semiconductor substrate has a Si (silicon) substrate, a first Al nitride semiconductor layer which is a graded layer formed on the Si substrate and whose Al concentration decreases as the distance from the Si substrate increases along the thickness direction, a GaN (gallium nitride) layer formed on the first Al nitride semiconductor layer and having a lower average Al concentration than the average Al concentration of the first Al nitride semiconductor layer, and a second Al nitride semiconductor layer formed on the GaN layer and having a higher average Al concentration than the average Al concentration of the GaN layer. The threading dislocation density at any position in the thickness direction within the second Al nitride semiconductor layer is lower than the threading dislocation density at any position in the thickness direction within the first Al nitride semiconductor layer.

Abstract: A compound semiconductor substrate that can improve in-plane uniformity of current-voltage characteristics in the vertical direction is provided. A compound semiconductor substrate includes a center and an edge which is 71.2 millimeters away from the center when viewed in a plane. When a film thickness of the GaN layer at the center of the compound semiconductor substrate is W1 and a film thickness of the CaN layer at the edge is W2, film thickness error ?W represented by ?W (%)=W1?W2|*100/W1 is greater than 0 and 8% or less. The average carbon concentration in the depth direction at a center of the CaN layer is 3*1018 pieces/cm3 or more and 5*1020 pieces/cm3 or less. When a carbon concentration at a center position of the depth direction at the center of the GaN layer is concentration C1 and a carbon concentration at a center position of the depth direction at the edge of the GaN layer is concentration C2, concentration error ?C represented by ?C (%)=|C1?C2*100/C1 is 0 or more and 50% or less.

Abstract: A compound semiconductor device, a compound semiconductor substrate, and a method for manufacturing of a compound semiconductor device. Compound semiconductor device 100 comprises Si substrate 1 which has a shape surrounding hole 21 when viewed in a plane, SIC layer 3 formed on top surface 1a of Si substrate 1 and covers hole 21, nitride layer 10 containing Ga formed on the top surface side of SiC layer 3, source electrode 13, drain electrode 15, and gate electrode 17 formed on the top surface side of nitride layer 10. The current flowing between source electrode 13 and drain electrode 15 can be controlled by the voltage applied to gate electrode 17. The Si substrate does not exist in the area RG where source electrode 13, drain electrode 15, and gate electrode 17 overlap the area when viewed from the direction orthogonal to top surface 1a of Si substrate 1.

Abstract: A compound semiconductor substrate in which the warpage can easily be controlled is provided. The compound semiconductor substrate comprises a SiC (silicon carbide) layer, an AlN (aluminum nitride) buffer layer formed on the SiC layer, and a lower composite layer formed on the AlN buffer layer, and an upper composite layer formed on the lower composite layer. The lower composite layer includes a plurality of lower Al (aluminum) nitride semiconductor layers vertically stacked and a lower GaN (gallium nitride) layer formed between the plurality of lower Al nitride semiconductor layers. The upper composite layer includes a plurality of upper GaN layers stacked vertically and an Al nitride semiconductor layer formed between the plurality of upper GaN layers.

Abstract: A compound semiconductor substrate includes a SiC (silicon carbide) layer, a AlN (aluminum nitride) buffer layer formed on the SiC layer, an Al (aluminum) nitride semiconductor layer formed on the AlN buffer layer, a composite layer formed on the Al nitride semiconductor layer, a GaN (gallium nitride) layer as an electron transition layer formed on the composite layer, and an Al nitride semiconductor layer as a barrier layer formed on the GaN layer. The composite layer includes C—GaN layers stacked in a vertical direction, and an AlN layer formed between the C—GaN layers.

Abstract: A compound semiconductor substrate having a desired quality is provided. A compound semiconductor substrate has an SiC (silicon carbide) layer, an AlN (aluminum nitride) buffer layer formed on the SiC layer, an Al (aluminum) nitride semiconductor layer formed on the AlN buffer layer, a first GaN (gallium nitride) layer formed on the Al nitride semiconductor layer, a first AlN intermediate layer formed on the first GaN layer in contact with the first GaN layer, and a second GaN layer formed on the first AlN intermediate layer in contact with the first AlN intermediate layer.

Abstract: A vibration reduction apparatus of a hybrid vehicle includes a differential rotation detector configured to detect a difference between a rotational speed of an output shaft of a prime mover and a rotational speed of a second rotating shaft, and controller configured to control a driving part and an electric motor so as to switch an operation mode from a first mode where a torque of the prime mover is output to an electric motor and a third shaft to a second mode where torque of the prime mover and the electric motor is output to the third shaft, when the difference detected by the differential rotation detector in the first mode is within a predetermined range continuously for a predetermined time.

Abstract: A composite semiconductor substrate being able to improve voltage withstanding and crystalline quality is provided. A composite semiconductor substrate is equipped with an Si (silicon) substrate, an SiC (silicon carbide) layer formed on the surface of the Si substrate, an AlN (aluminum nitride) layer formed on the surface of the SiC layer, a composite layer formed on the surface of the AlN layer, and a GaN (gallium nitride) layer formed on the surface of the composite layer. The composite layer includes an AlN (aluminum nitride) layer and a GaN layer formed on the surface of the AlN layer. In at least one composite layer, the average density of C and Fe in the GaN layer is higher than the average density of C and Fe in the AlN layer.

Abstract: A control apparatus for a transmission including a gear engagement commander outputting a gear engagement command of a sleeve, an actuator controller controlling an actuator to move the sleeve from a neutral position to a gear engaging position when the gear engagement command is output, a gear engagement determiner determining whether an engagement of the sleeve is prevented in a course of moving the sleeve from the neutral position to the gear engaging position; and a motor controlling an electric motor to rotate a rotating shaft so as to change a rotational position of movable dog teeth relative to passive dog teeth when it is determined that the engagement of the sleeve is prevented.

Abstract: A compound semiconductor substrate having a desired quality is provided. A compound semiconductor substrate has an SiC (silicon carbide) layer, an AlN (aluminum nitride) buffer layer formed on the SiC layer, an Al (aluminum) nitride semiconductor layer formed on the AlN buffer layer, a first GaN (gallium nitride) layer formed on the Al nitride semiconductor layer, a first AlN intermediate layer formed on the first GaN layer in contact with the first GaN layer, and a second GaN layer formed on the first AlN intermediate layer in contact with the first AlN intermediate layer.

Abstract: A vibration reduction apparatus of a hybrid vehicle includes a differential rotation detector configured to detect a difference between a rotational speed of an output shaft of a prime mover and a rotational speed of a second rotating shaft, and controller configured to control a driving part and an electric motor so as to switch an operation mode from a first mode where a torque of the prime mover is output to an electric motor and a third shaft to a second mode where torque of the prime mover and the electric motor is output to the third shaft, when the difference detected by the differential rotation detector in the first mode is within a predetermined range continuously for a predetermined time.