Abstract: A substrate holding apparatus which can adjust polishing profile precisely is disclosed. The substrate holding apparatus includes an elastic membrane that forms a plurality of pressure chambers for pressing a substrate, and a head body to which the elastic membrane is coupled. The elastic membrane includes a contact portion to be brought into contact with the substrate for pressing the substrate against a polishing pad, an edge circumferential wall extending upwardly from a peripheral edge of the contact portion, and a plurality of inner circumferential walls arranged radially inwardly of the edge circumferential wall and extending upwardly from the contact portion. At least two adjacent inner circumferential walls of the plurality of inner circumferential walls include slope circumferential walls inclined radially inwardly. The slope circumferential walls are inclined radially inwardly in their entirety from their lower ends to upper ends, and extend upwardly.

Abstract: Provided is a silicon substrate processing method including: providing a silicon substrate with a sacrificial layer formed in the form of an island on the front surface thereof, the front surface being a surface on a side where the flow path of an ejection port for ejecting liquid is to be formed, the sacrificial layer having a higher etching rate than the silicon substrate; forming a mask layer on the back surface, the back surface being a surface opposite from the front surface, the mask layer being a layer that does not include an opening at a portion of the back surface opposite from the sacrificial layer; forming a non-penetrating hole from an opening on the back surface of the silicon substrate; and forming a beam on the back surface side by performing anisotropic etching on the silicon substrate in which the non-penetrating hole is formed.

Abstract: Polyvinyl acetal films with less blocking tendency and which allow for escape of gas during laminating to form laminated composities are prepared by a process for embossing a film comprising plasticized polyvinyl acetal with a roughness Rz on at least one surfaces of 20 to 100 ?m by the steps of a. extruding of plasticised polyvinyl acetal to a film with a stochastic roughness of the surfaces of Rz =1 to 70 ?m, b. embossing at least one surface of the film obtained in step a) with channels having a depth of 5-50 ?m, a width of 10-200 ?m and a pitch of 50-2500 ?m, wherein c. the surface roughness of the elevations between the channels is at most 20% lower as obtained in step a).

Abstract: The present invention provides a liquid ejecting head in which a chip crack is unlikely to occur. To achieve this, a liquid ejecting head includes an element substrate having energy generating elements arranged on the front face of the element substrate in its longitudinal direction and a channel member having ejection ports formed to correspond to the energy generating elements, respectively. In the element substrate, a supply port for supplying liquid is formed so as to pierce through from a back face to a front face of the element substrate, and inside the supply port, a beam is formed at a position closer to an end of the supply port rather than a center thereof in its longitudinal direction to connect facing inner walls of the supply port in its lateral direction.

Abstract: Provided is a silicon substrate processing method including: providing a silicon substrate with a sacrificial layer formed in the form of an island on the front surface thereof, the front surface being a surface on a side where the flow path of an ejection port for ejecting liquid is to be formed, the sacrificial layer having a higher etching rate than the silicon substrate; forming a mask layer on the back surface, the back surface being a surface opposite from the front surface, the mask layer being a layer that does not include an opening at a portion of the back surface opposite from the sacrificial layer; forming a non-penetrating hole from an opening on the back surface of the silicon substrate; and forming a beam on the back surface side by performing anisotropic etching on the silicon substrate in which the non-penetrating hole is formed.

Abstract: Polyvinyl acetal films with less blocking tendency and which allow for escape of gas during laminating to form laminated composities are prepared by a process for embossing a film comprising plasticized polyvinyl acetal with a roughness Rz on at least one surfaces of 20 to 100 ?m by the steps of a. extruding of plasticised polyvinyl acetal to a film with a stochastic roughness of the surfaces of Rz=1 to 70 ?m, b. embossing at least one surface of the film obtained in step a) with channels having a depth of 5-50 ?m, a width of 10-200 ?m and a pitch of 50-2500 ?m, wherein c. the surface roughness of the elevations between the channels is at most 20% lower as obtained in step a).

Abstract: The wall of each supply path formed in a silicon substrate has such a shape that a plurality of regions distinguished from each other due to different inclinations to a first surface of the silicon substrate are connected to each other between the first surface and a second surface of the silicon substrate and the width of the supply path is maintained or expands from the first surface to second surface of the silicon substrate. An internal opening is formed by one of the regions that is most steeply inclined to the first surface of the silicon substrate. A region reducing the squeezing of an adhesive into the internal opening is placed between the internal opening and the second surface of the silicon substrate.

Abstract: Provided is a liquid ejection head, including: a substrate including a supply path passing through the substrate from a first surface of the substrate to a second surface thereof opposite to the first surface; and a member bonded to the second surface of the substrate via an adhesive, in which an inner wall of the supply path has a portion substantially in parallel with the second surface.

Abstract: A method for manufacturing a liquid ejection head substrate, including: (1) a step for etching a substrate, which has an energy generating element at a side of a first surface, from a side of a second surface, which is a surface on the opposite side from the first surface, thereby to form at a time at least a part of a liquid supply port and a recess along a cutting section of the substrate; (2) a step for irradiating a laser beam toward the side of first surface from the etched surface of the recess so as to form a reformed portion inside the substrate; and (3) a step for cutting the substrate at the reformed portion.

Abstract: The wall of each supply path formed in a silicon substrate has such a shape that a plurality of regions distinguished from each other due to different inclinations to a first surface of the silicon substrate are connected to each other between the first surface and a second surface of the silicon substrate and the width of the supply path is maintained or expands from the first surface to second surface of the silicon substrate. An internal opening is formed by one of the regions that is most steeply inclined to the first surface of the silicon substrate. A region reducing the squeezing of an adhesive into the internal opening is placed between the internal opening and the second surface of the silicon substrate.

Abstract: A method for manufacturing a liquid discharge includes a process of forming a plurality of blind holes extending from a first surface of the silicon substrate toward a second surface which is a surface opposite to the first surface in the silicon substrate and a process of subjecting the silicon substrate in which the plurality of blind holes are formed to anisotropic etching from the first surface to form a liquid supply port in the silicon substrate, in which, in the process of forming the liquid supply port, the silicon in a region sandwiched by the plurality of blind holes when the silicon substrate is seen from the second surface side is left without being removed by the anisotropic etching to use the left silicon as a beam.

Abstract: A method of manufacturing a liquid discharge head includes: forming a first hole which penetrates through a wafer and becomes at least part of a liquid supply port and a second hole which does not penetrate through the wafer and becomes at least part of a cut-off portion from a front side of the wafer; arranging a dry film on the front side of the wafer; forming a flow passage forming member by heating and developing the dry film; and cutting off the liquid discharge head from the wafer by grinding the wafer from a back side so that the second hole penetrates through the wafer.

Abstract: A method for producing a liquid-discharge-head substrate includes a step of preparing a silicon substrate including, at a front-surface side of the silicon substrate, an energy generating element; a step of forming a first etchant introduction hole on the front-surface side of the silicon substrate; a step of supplying a first etchant into the first etchant introduction hole formed on the front-surface side of the silicon substrate, and supplying a second etchant to a back-surface side of the silicon substrate; a step of stopping the supply of the second etchant; and a step of, after the supply of the second etchant has been stopped, forming a liquid supply port extending through front and back surfaces of the silicon substrate by the supply of the first etchant.

Abstract: A method of manufacturing a liquid discharge head includes: forming a first hole which penetrates through a wafer and becomes at least part of a liquid supply port and a second hole which does not penetrate through the wafer and becomes at least part of a cut-off portion from a front side of the wafer; arranging a dry film on the front side of the wafer; forming a flow passage forming member by heating and developing the dry film; and cutting off the liquid discharge head from the wafer by grinding the wafer from a back side so that the second hole penetrates through the wafer.

Abstract: Provided is a processing method for an ink jet head substrate, including: forming a barrier layer on a substrate and forming a seed layer on the barrier layer; forming a resist film on the seed layer and patterning the resist film so that the patterned resist film corresponds to a pad portion for electrically connecting an ink jet head to an outside of the ink jet head; forming the pad portion in an opening of the patterned resist film; removing the resist film; subjecting the substrate to anisotropic etching to form an ink supply port; removing the barrier layer and the seed layer; and performing laser processing from a surface of the substrate.

Abstract: A method for manufacturing a liquid discharge includes a process of forming a plurality of blind holes extending from a first surface of the silicon substrate toward a second surface which is a surface opposite to the first surface in the silicon substrate and a process of subjecting the silicon substrate in which the plurality of blind holes are formed to anisotropic etching from the first surface to form a liquid supply port in the silicon substrate, in which, in the process of forming the liquid supply port, the silicon in a region sandwiched by the plurality of blind holes when the silicon substrate is seen from the second surface side is left without being removed by the anisotropic etching to use the left silicon as a beam.

Abstract: A manufacturing method, for a liquid discharge head substrate that includes a silicon substrate in which a liquid supply port is formed, includes the steps of: preparing the silicon substrate, on one face of which a mask layer, in which an opening has been formed, is deposited; forming a first recessed portion in the silicon substrate, so that the recessed portion is extended through the opening from the one face of the silicon substrate to the other, reverse face of the silicon substrate; forming a second recessed portion by performing wet etching for the substrate, via the first recessed portion, using the mask layer; and performing dry etching for the silicon substrate in a direction from the second recessed portion to the other face.

Abstract: A method for processing a substrate includes preparing a substrate having a first layer on a first surface side thereof, the first layer having a material capable of suppressing transmission of laser light, processing the substrate with laser light from a second surface that is opposite the first surface of the substrate toward the first surface of the substrate, and allowing the laser light to reach the first layer to form a hole in the substrate, and performing etching of the substrate from the second surface through the hole.

Abstract: A method of processing an inkjet head substrate includes, in series, a step of forming a barrier layer on a substrate and forming a seed layer on the barrier layer, a step of forming a resist film on the seed layer and patterning the resist film such that the resist film has an opening corresponding to a wiring section configured to drive ink discharge energy-generating elements, a step of forming the wiring section in the opening of the patterned resist film, a step of removing the resist film, a step of laser-processing a surface of the substrate, a step of forming an ink supply port by anisotropically etching the substrate, and a step of removing the barrier layer and the seed layer.

Abstract: A method of processing a liquid discharge head substrate includes the step of providing a recessed portion in the back surface of the substrate by discharging a manufacturing liquid in a linear trajectory to the back surface of the substrate and by irradiating the back surface of the substrate with laser light that passes along and in the manufacturing liquid.