Abstract: The object of the present invention is to provide a novel exhaust gas purifying catalyst having excellent NOx purification performance. The object can be achieved by an exhaust gas purifying catalyst comprising: a substrate; and a catalyst layer disposed on the substrate which comprises a first carrier, and platinum and a first palladium supported on the first carrier; in which the weight ratio of the platinum to the first palladium is 3:1 to 8:1.

Abstract: The present invention provides a method of producing a sulfide compound semiconductor containing Cu, Zn, Sn and S, in which the method includes a solvothermal step of conducting a solvothermal reaction of Cu, Zn, Sn and S in an organic solvent, and a rod-like crystal of sulfide compound semiconductor containing Cu, Zn, Sn and S.

Abstract: The object of the present invention is to provide a novel exhaust gas purifying catalyst having excellent NOx purification performance. The object can be achieved by an exhaust gas purifying catalyst comprising: a substrate; and a catalyst layer disposed on the substrate which comprises a first carrier, and platinum and a first palladium supported on the first carrier; in which the weight ratio of the platinum to the first palladium is 3:1 to 8:1.

Abstract: Disclosed is an exhaust gas purifying catalyst in which grain growth of a noble metal particle supported on a support is suppressed. Also disclosed is a production process for producing an exhaust gas purifying catalyst. The exhaust gas purifying catalyst comprises a crystalline metal oxide support and a noble metal particle supported on the support, wherein the noble metal particle is epitaxially grown on the support, and wherein the noble metal particle is dispersed and supported on the outer and inner surfaces of the support. The process for producing an exhaust gas purifying catalyst comprises masking, in a solution, at least a part of the surface of a crystalline metal oxide support by a masking agent, introducing the support into a noble metal-containing solution containing a noble metal, and drying and firing the support and the noble metal-containing solution to support the noble metal on the support.

Abstract: An exhaust gas control apparatus for an internal combustion engine includes: a NOx purification catalyst arranged in an exhaust passage of the internal combustion engine; a degradation degree estimating unit estimating a degradation degree of the NOx purification catalyst; and an air-fuel ratio control unit adjusting an air-fuel ratio of exhaust gas flowing into the NOx purification catalyst, wherein, until the estimated degradation degree of the NOx purification catalyst reaches a predetermined degradation degree, the air-fuel ratio control unit adjusts the air-fuel ratio of the exhaust gas to a rich air-fuel ratio, and, when the estimated degradation degree of the NOx purification catalyst exceeds the predetermined degradation degree, the air-fuel ratio control unit changes the air-fuel ratio of the exhaust gas from the rich air-fuel ratio to a lean air-fuel ratio so that the NOx purification catalyst is regenerated.

Abstract: Disclosed is an exhaust gas purifying catalyst in which grain growth of a noble metal particle supported on a support is suppressed. Also, disclosed is a production process of an exhaust gas purifying catalyst, by which the above exhaust gas purifying catalyst can be produced. The exhaust gas purifying catalyst comprises a crystalline metal oxide support and a noble metal particle supported on the support, wherein the noble metal particle is epitaxially grown on the support, and wherein the noble metal particle is dispersed and supported on the outer and inner surfaces of the support. The process for producing an exhaust gas purifying catalyst comprises masking, in a solution, at least a part of the surface of a crystalline metal oxide support by a masking agent, introducing the support into a noble metal-containing solution containing a noble metal, and drying and firing the support and the noble metal-containing solution to support the noble metal on the support.

Abstract: Disclosed is an exhaust gas purifying catalyst in which grain growth of a noble metal particle supported on a support is suppressed. Also disclosed is a production process for producing an exhaust gas purifying catalyst. The exhaust gas purifying catalyst comprises a crystalline metal oxide support and a noble metal particle supported on the support, wherein the noble metal particle is epitaxially grown on the support, and wherein the noble metal particle is dispersed and supported on the outer and inner surfaces of the support. The process for producing an exhaust gas purifying catalyst comprises masking, in a solution, at least a part of the surface of a crystalline metal oxide support by a masking agent, introducing the support into a noble metal-containing solution containing a noble metal, and drying and firing the support and the noble metal-containing solution to support the noble metal on the support.

Abstract: An exhaust gas control apparatus for an internal combustion engine includes: a NOx purification catalyst arranged in an exhaust passage of the internal combustion engine; a degradation degree estimating unit estimating a degradation degree of the NOx purification catalyst; and an air-fuel ratio control unit adjusting an air-fuel ratio of exhaust gas flowing into the NOx purification catalyst, wherein, until the estimated degradation degree of the NOx purification catalyst reaches a predetermined degradation degree, the air-fuel ratio control unit adjusts the air-fuel ratio of the exhaust gas to a rich air-fuel ratio, and, when the estimated degradation degree of the NOx purification catalyst exceeds the predetermined degradation degree, the air-fuel ratio control unit changes the air-fuel ratio of the exhaust gas from the rich air-fuel ratio to a lean air-fuel ratio so that the NOx purification catalyst is regenerated.

Abstract: The present invention provides a method of producing a sulfide compound semiconductor containing Cu, Zn, Sn and S, in which the method includes a solvothermal step of conducting a solvothermal reaction of Cu, Zn, Sn and S in an organic solvent, and a rod-like crystal of sulfide compound semiconductor containing Cu, Zn, Sn and S.

Abstract: Gas is supplied from positive pressure (105 Pa or more) to an analysis device of high vacuum (10?2 Pa or less) precisely and stably, while keeping conditions constant and replicating the conditions, and performing switching to a desired gas within a short time. According to a gas introducing device and a method, a plurality of types of gases are synthesized in a mixing chamber, the synthesized gas is introduced and the pressure of the gas is reduced by a pressure reducing pump to a pressure ranging from 0.1 Pa to 0.1 MPa, and the depressurized gas is introduced to a gas analysis device through a switching operation using a gas switching valve.

Abstract: Gas is supplied from positive pressure (105 Pa or more) to an analyzer of high vacuum (10?2 Pa or less) precisely and stably, while keeping conditions constant and replicating the conditions, and performing switching to a desired gas within a short time. According to a gas introducing device and a method, a plurality of types of gases are synthesized in a mixing chamber, the synthesized gas is introduced and is decompressed by a decompression pump to a pressure ranging from 0.1 Pa to 0.1 MPa, and the decompressed gas is introduced to a gas analyzer through a switching operation using a gas switching valve.

Abstract: Disclosed is an exhaust gas purifying catalyst in which grain growth of a noble metal particle supported on a support is suppressed. Also, disclosed is a production process of an exhaust gas purifying catalyst, by which the above exhaust gas purifying catalyst can be produced. The exhaust gas purifying catalyst comprises a crystalline metal oxide support and a noble metal particle supported on the support, wherein the noble metal particle is epitaxially grown on the support, and wherein the noble metal particle is dispersed and supported on the outer and inner surfaces of the support. The process for producing an exhaust gas purifying catalyst comprises masking, in a solution, at least a part of the surface of a crystalline metal oxide support by a masking agent, introducing the support into a noble metal-containing solution containing a noble metal, and drying and firing the support and the noble metal-containing solution to support the noble metal on the support.

Abstract: Gas is supplied from positive pressure (105 Pa or more) to an analysis device of high vacuum (10?2 Pa or less) precisely and stably, while keeping conditions constant and replicating the conditions, and performing switching to a desired gas within a short time. According to a gas introducing device and a method, a plurality of types of gases are synthesized in a mixing chamber, the synthesized gas is introduced and the pressure of the gas is reduced by a pressure reducing pump to a pressure ranging from 0.1 Pa to 0.1 MPa, and the depressurized gas is introduced to a gas analysis device through a switching operation using a gas switching valve.

Abstract: Gas is supplied from positive pressure (105 Pa or more) to an analyzer of high vacuum (10?2 Pa or less) precisely and stably, while keeping conditions constant and replicating the conditions, and performing switching to a desired gas within a short time. According to a gas introducing device and a method, a plurality of types of gases are synthesized in a mixing chamber, the synthesized gas is introduced and is decompressed by a decompression pump to a pressure ranging from 0.1 Pa to 0.1 MPa, and the decompressed gas is introduced to a gas analyzer through a switching operation using a gas switching valve.

Abstract: A high-density recording medium comprising a fullerene/carbon nanotube complex (peapod) comprising a single-wall carbon tube in which fullerenes are inserted in series. A structural difference between a locally bound portion and a non-bound portion of the series of fullerenes is recorded as binary information. The limit of storage capacity in conventional recording media based on micrometer-level binarization information recording techniques can be overcome, and a nanoscale binarization information recording technique is provided.