Abstract: A method for manufacturing a semiconductor device includes forming a first mask layer having a first opening on an underlying layer; forming a first layer in a space where the underlying layer is selectively removed via the first opening; forming a second mask layer on the first mask layer and the first layer, the second mask layer having a second opening crossing the first opening; and selectively removing the first layer at a portion where the first opening and the second opening cross. At least one of the first and second mask layers having openings including the first or second opening, the openings being arranged in the first mask layer along a first direction, and/or being arranged in the second mask layer along a second direction, the first opening crossing the second opening in the first direction, and the second opening crossing the first opening in the second direction.

Abstract: A semiconductor memory device according to one embodiment, includes a first electrode film, a plurality of semiconductor members, and a charge storage member. The first electrode film includes three or more first portions and a second portion connecting the first portions to each other. The first portions extend in a first direction and are arranged along a second direction that intersects with the first direction. The plurality of semiconductor members are arranged along the first direction between the first portions and extending in a third direction. The third direction intersects with a plane containing the first direction and the second direction. The charge storage member is disposed between each of the semiconductor members and each of the first portions. The second portion is disposed between the semiconductor members.

Abstract: A semiconductor memory device includes a first structural body, a second structural body and interconnections. The first and the second structural bodies are separated in a first direction and extend in a second direction. The interconnections are provided between the first structural body and the second structural body, extend in the second direction, and are separated from each other along a third direction. The first and the second structural bodies each includes an insulating member, a column-shaped body and an insulating film. The insulating member and the column-shaped body are disposed in an alternating manner along the second direction and extend in the third direction. The insulating members of the first and second structural bodies make contact with the interconnections.

Abstract: A semiconductor memory device according to an embodiment, includes a first semiconductor member, a second semiconductor member, an insulating member, a plurality of electrode films, a first electrode, and a second electrode. The first semiconductor member and the second semiconductor member are separated in a first direction and extending in a second direction. The second direction crosses the first direction. The insulating member is provided between the first semiconductor member and the second semiconductor member. The plurality of electrode films are arranged to be separated from each other along the second direction. Each of the electrode films surrounds the first semiconductor member, the second semiconductor member, and the insulating member when viewed from the second direction. The first electrode is provided between the first semiconductor member and the electrode film. The second electrode is provided between the second semiconductor member and the electrode film.

Abstract: According to one embodiment, a semiconductor device includes a semiconductor substrate, a stacked body, and a first insulating film. The stacked body is provided on the semiconductor substrate. The stacked body includes first films, and second films being conductive. The first films and the second films are stacked alternately. The first insulating film extends in a stacking direction of the stacked body. The second films include a first portion and a second portion. The first portion is positioned between the first films. The second portion has a surface contacting the first insulating film in a direction perpendicular to the stacking direction.