Abstract: This transmission shaft is used in a transmission and has a raceway surface on which needle rollers roll. The transmission shaft includes a base material and a triiron tetraoxide film. The base material includes any one of chromium steel, chromium-molybdenum steel, or nickel-chromium-molybdenum steel, and has, on a surface thereof, a diffusion layer including crystal grains of at least one of iron carbide, iron nitride, or iron carbonitride. The triiron tetraoxide film is formed on the surface of the base material and is disposed at least on the raceway surface.

Abstract: A laser device includes a substrate including a principal surface and a recess provided in the principal surface; a laser oscillation unit fixed to the principal surface in direct contact with the principal surface or with an adhesive interposed between the laser oscillation unit and the principal surface, the laser oscillation unit having an emission surface from which laser light that diverges as the laser light travels is emitted along the principal surface; and a reflecting member fixed to a bottom surface of the recess and having an inclined surface that is inclined with respect to the principal surface so as to reflect the laser light. At least a portion of the inclined surface is positioned in a space inside the recess.

Abstract: The present invention is the following Amphotericin B derivative: wherein each symbol is defined in description. The compound of the present invention has 16th position (X) is urea structure, cyclic structure, hydroxyalkyl or substituted monoalkylcarbamoyl. The compound of the present invention has antifungal activity.

Abstract: Light emission efficiency is increased in an eye-safe light source by regulating light distribution properties. An eye-safe light source includes a package, a semiconductor laser that emits laser light from a left light emission end surface and a right light emission end surface, and a wire that is joined to the semiconductor laser. The semiconductor laser is joined to the package such that the laser light is emitted parallel to an upper surface of a lead frame of the package. The package includes reflection surfaces that face the left light emission end surface and the right light emission end surface and reflect the laser light. In top view, a direction in which the wire extends is perpendicular to a direction of emission of the laser light.

Abstract: The purpose of the present invention is to provide novel compounds having ACC2 selective inhibitory activity. In addition, the present invention provides a pharmaceutical composition comprising the compound. A compound of Formula: or its pharmaceutically acceptable salt, wherein, R1 is substituted or unsubstituted fused aromatic heterocyclyl represented by Formula: wherein, ring B is 5-membered ring, ring C is 6-membered ring; ring A is substituted or unsubstituted non-aromatic carbocycle or the like; -L1- is —O—(CR6R7)m- or the like; -L2- is —O—(CR6R7)n- or the like; each R6 is independently hydrogen or the like; each R7 is independently hydrogen or the like; each m is independently an integer of 0, 1, 2 or 3; each n is independently an integer of 1, 2 or 3; R2 is substituted or unsubstituted alkyl; R3 is hydrogen or substituted or unsubstituted alkyl; R4 is substituted or unsubstituted alkylcarbonyl or the like.

Abstract: The present invention is the following Amphotericin B derivative: wherein each symbol is defined in description. The compound of the present invention has 16th position (X) is urea structure, cyclic structure, hydroxyalkyl or substituted monoalkylcarbamoyl. The compound of the present invention has antifungal activity.

Abstract: The present invention is the following Amphotericin B derivative: wherein each symbol is defined in description. The compound of the present invention has 16th position (X) is urea structure, cyclic structure, hydroxyalkyl or substituted monoalkylcarbamoyl. The compound of the present invention has antifungal activity.

Abstract: The purpose of the present invention is to provide novel compounds having ACC2 selective inhibitory activity. In addition, the present invention provides a pharmaceutical composition comprising the compound. A compound of Formula: or its pharmaceutically acceptable salt, wherein, R1 is substituted or unsubstituted fused aromatic heterocyclyl represented by Formula: wherein, ring B is 5-membered ring, ring C is 6-membered ring; ring A is substituted or unsubstituted non-aromatic carbocycle or the like; —L1— is —O—(CR6R7)m— or the like; —L2— is —O—(CR6R7)n— or the like; each R6 is independently hydrogen or the like; each R7 is independently hydrogen or the like; each m is independently an integer of 0, 1, 2 or 3; each n is independently an integer of 1, 2 or 3; R2 is substituted or unsubstituted alkyl; R3 is hydrogen or substituted or unsubstituted alkyl; R4 is substituted or unsubstituted alkylcarbonyl or the like.

Abstract: The object of the present invention is to provide novel compounds having ACC2 inhibiting activity. In addition, the object of the present invention is to provide a pharmaceutical composition comprising the compound. A compound of formula (I): wherein R1 is substituted or unsubstituted fused aromatic heterocyclyl etc., ring A is substituted or unsubstituted non-aromatic carbocycle etc., -L1- is —O—(CR6R7)m- etc., -L2- is —O—(CR6R7)n- etc., each R6 and R7 are independently hydrogen, halogen etc., R2 is substituted or unsubstituted alkyl, R3 is hydrogen or substituted or unsubstituted alkyl, R4 is substituted or unsubstituted alkylcarbonyl etc.

Abstract: Provided is an imaging device capable of improving imaging accuracy while suppressing increase in a size of the device and cost thereof. An imaging device includes: a light source which is a semiconductor laser that radiates infrared light to an imaging target; a polarizing filter that blocks light that is reflected by a surface of the imaging target and transmits light that is reflected inside the imaging target; and an image sensor that receives the light that is transmitted through the polarizing filter and captures an image of the imaging target.

Abstract: Light emission efficiency is increased in an eye-safe light source by regulating light distribution properties. An eye-safe light source includes a package, a semiconductor laser that emits laser light from a left light emission end surface and a right light emission end surface, and a wire that is joined to the semiconductor laser. The semiconductor laser is joined to the package such that the laser light is emitted parallel to an upper surface of a lead frame of the package. The package includes reflection surfaces that face the left light emission end surface and the right light emission end surface and reflect the laser light. In top view, a direction in which the wire extends is perpendicular to a direction of emission of the laser light.

Abstract: The purpose of the present invention is to provide novel compounds having ACC2 selective inhibitory activity. In addition, the present invention provides a pharmaceutical composition comprising the compound. A compound of Formula: or its pharmaceutically acceptable salt, wherein, R1 is substituted or unsubstituted fused aromatic heterocyclyl represented by Formula: wherein, ring B is 5-membered ring, ring C is 6-membered ring; ring A is substituted or unsubstituted non-aromatic carbocycle or the like; -L1- is —O—(CR6R7)m- or the like; -L2- is —O—(CR6R7)n- or the like; each R6 is independently hydrogen or the like; each R7 is independently hydrogen or the like; each m is independently an integer of 0, 1, 2 or 3; each n is independently an integer of 1, 2 or 3; R2 is substituted or unsubstituted alkyl; R3 is hydrogen or substituted or unsubstituted alkyl; R4 is substituted or unsubstituted alkylcarbonyl or the like.

Abstract: The present invention provides useful compounds for HIV protease inhibitor.

Abstract: The present invention is the following Amphotericin B derivative: wherein each symbol is defined in description. The compound of the present invention has 16th position (X) is urea structure, cyclic structure, hydroxyalkyl or substituted monoalkylcarbamoyl. The compound of the present invention has antifungal activity.

Abstract: The object of the present invention is to provide novel compounds having ACC2 inhibiting activity. In addition, the object of the present invention is to provide a pharmaceutical composition comprising the compound. A compound of formula (I): wherein R1 is substituted or unsubstituted fused aromatic heterocyclyl etc., ring A is substituted or unsubstituted non-aromatic carbocycle etc., -L1- is —O—(CR6R7)m- etc., -L2- is —O—(CR6R7)n- etc., each R6 and R7 are independently hydrogen, halogen etc., R2 is substituted or unsubstituted alkyl, R3 is hydrogen or substituted or unsubstituted alkyl, R4 is substituted or unsubstituted alkylcarbonyl etc.

Abstract: A semiconductor laser device including a submount having a front surface and a back surface corresponding to the opposing face that are in parallel with each other and a visible light transmittance of 60% or more; a connection electrode that is formed on the front surface; and a semiconductor laser element that is packaged on the submount through the connection electrode, and is allowed to emit a laser beam in a direction parallel to the front surface.

Abstract: A semiconductor laser device comprising: a submount having a front surface and a back surface corresponding to the opposing face that are in parallel with each other and a visible light transmittance of 60% or more; a connection electrode that is formed on the front surface; and a semiconductor laser element that is packaged on the submount through the connection electrode, and is allowed to emit a laser beam in a direction parallel to the front surface.

Abstract: An n-type GaAs buffer layer 4, an n-type GaInP intermediate layer 6, an n-type AlGaInP cladding layer 8, a non-doped MQW active layer 10, a p-type AlGaInP cladding layer 12, a p-type AlGaInP cladding layer 14 and a p-type GaAs cap layer 16 are formed on an n-type GaAs substrate 2. The p-type cladding layer 14 and the p-type cap layer 16 are formed in a ridge portion 15, and a narrow width portion 17 is formed including an upper portion of the n-type substrate 2 and the layers there above. An SiO2 film 18 is formed on the side surfaces of the ridge portion 15, the surfaces of the narrow width portion 17 and the surface of a step portion 2a of the n-type substrate 2. A p-side electrode layer 23 is formed on the surfaces of the SiO2 film 18 formed on ridge portion 15 and the narrow width portion 17.

Abstract: A light confinement layer constructed of a semiconductor that has a refractive index different from that of p-type second cladding layers is formed to a small film thickness of not greater than 2 ?m (about 0.5 ?m) on the whole surface of ridge portions of two semiconductor lasers. Thus, the light confinement layer on the ridge portions is made roughly flat so as to be easily removable by etching. As a result, the exposure of p-type second cladding layers of the ridge portions due to deep etching is prevented to allow the confinement of light into the p-type cladding layers to be stably effected. A dielectric film is formed on the light confinement layer and reinforces the current constriction function lost by the reduction in the thickness of the light confinement layer.

Abstract: An AlGaAs-based semiconductor laser 29 is formed on an n-type GaAs substrate 21 and thereafter etching is carried out until reaching an n-type AlGaAs clad layer 23 from the surface. Next, the n-type AlGaAs clad layer 23 is removed by etching with an etchant having selectivity to GaAs. Subsequently, the surface of an n-type GaAs buffer layer 22 is lightly etched. Thus, the n-type GaAs buffer layer 22 of the AlGaAs-based semiconductor laser 29 is left in a slightly abraded state on the n-type GaAs substrate 21, maintaining the flatness of the groundwork layer during growing an AlGaInP-based semiconductor laser 38 at the second time. Therefore, the flatness of the crystals of, in particular, an active layer grown at the second time can be improved, and the poor characteristics of the AlGaInP-based semiconductor laser 38 attributed to the poor flatness of the groundwork can be improved.