Abstract: An electron beam apparatus for inspecting a pattern on a sample using multiple electron beams includes a plurality of primary electro-optical systems and a plurality of secondary electro-optical systems associated with the respective primary electro-optical systems. The primary electro-optical systems are for irradiating multiple primary electron beams on a surface of the sample, and each includes an electron gun having an anode and an objective lens. The secondary electro-optical systems are for inducing secondary electrons emitted from a surface of the sample by irradiation of the primary electron beams. Detectors are each for detecting the secondary electrons and generating electric signals corresponding to the detected electrons. The anodes of the electron guns of the primary electro-optical systems comprise an anode substrate in common having multiple holes corresponding to the axes of the respective primary electro-optical systems. The anode substrate has metal coatings around the respective holes.

Abstract: An electron beam apparatus for inspecting a pattern on a sample using multiple electron beams includes a plurality of primary electro-optical systems and a plurality of secondary electro-optical systems associated with the respective primary electro-optical systems. The primary electro-optical systems are for irradiating multiple primary electron beams on a surface of the sample, and each includes an electron gun having an anode and an objective lens. The secondary electro-optical systems are for inducing secondary electrons emitted from a surface of the sample by irradiation of the primary electron beams. Detectors are each for detecting the secondary electrons and generating electric signals corresponding to the detected electrons. The anodes of the electron guns of the primary electro-optical systems comprise an anode substrate in common having multiple holes corresponding to the axes of the respective primary electro-optical systems. The anode substrate has metal coatings around the respective holes.

Abstract: An electron beam apparatus for inspecting a pattern on a sample using multiple electron beams includes a plurality of primary electro-optical systems and a plurality of secondary electro-optical systems associated with the respective primary electro-optical systems. The primary electro-optical systems are for irradiating multiple primary electron beams on a surface of the sample, and each includes an electron gun having an anode and an objective lens. The secondary electro-optical systems are for inducing secondary electrons emitted from a surface of the sample by irradiation of the primary electron beams. Detectors are each for detecting the secondary electrons and generating electric signals corresponding to the detected electrons. The anodes of the electron guns of the primary electro-optical systems comprise an anode substrate in common having multiple holes corresponding to the axes of the respective primary electro-optical systems. The anode substrate has metal coatings around the respective holes.

Abstract: Stage orthogonal error and position errors caused by mirror distortion are reduced. A CPU calculates a coordinate error (?x,?y) between a measured XY coordinate (x,y) of each of arbitrary reference points on a wafer W0 loaded on a XY stage which is measured by a laser interferometer and a calculated ideal position XY coordinate of the reference point, calculates an orthogonal error of the XY coordinates on the bases of the calculated coordinate errors (?x,?y) and an error due to mirror distortion, and stores them in a storage device. When a wafer W is actually inspected, the CPU corrects the measured position coordinates (x,y) from the laser interferometer on the basis of the calculated orthogonal error, and corrects beam deflector for deflection on the basis of the calculated error due to mirror distortion.

Abstract: Stage orthogonal error and position errors caused by mirror distortion are reduced. A CPU calculates a coordinate error (?x,?y) between a measured XY coordinate (x,y) of each of arbitrary reference points on a wafer W0 loaded on a XY stage which is measured by a laser interferometer and a calculated ideal position XY coordinate of the reference point, calculates an orthogonal error of the XY coordinates on the bases of the calculated coordinate errors (?x,?y) and an error due to mirror distortion, and stores them in a storage device. When a wafer W is actually inspected, the CPU corrects the measured position coordinates (x,y) from the laser interferometer on the basis of the calculated orthogonal error, and corrects beam deflector for deflection on the basis of the calculated error due to mirror distortion.

Abstract: Stage orthogonal error and position errors caused by mirror distortion are reduced. A CPU 10-2 calculates a coordinate error (?x,?y) between a measured XY coordinate (x,y) of each of arbitrary reference points on a wafer W0 loaded on a XY stage 10-1 which is measured by a laser interferometer 10-4 and a calculated ideal position XY coordinate of the reference point, calculates an orthogonal error of the XY coordinates on the bases of the calculated coordinate errors (?x,?y) and an error due to mirror distortion, and stores them in a storage device 10-5. When a wafer W is actually inspected, the CPU 10-2 corrects the measured position coordinates (x,y) from the laser interferometer 10-4 on the basis of the calculated orthogonal error, and corrects beam deflector 10-7 for deflection on the basis of the calculated error due to mirror distortion.

Abstract: In one aspect, a method is provided which includes (1) providing a substrate including a photoresist layer and an additional layer which may be a potential source of contaminants, and (2) preventing a release of contaminants from the additional layer, wherein preventing the release of contaminants from the additional layer protects the photoresist layer from exposure to contaminants from the additional layer. Numerous other aspects are provided.