Abstract: A transistor includes oxide semiconductor stacked layers between a first gate electrode layer and a second gate electrode layer through an insulating layer interposed between the first gate electrode layer and the oxide semiconductor stacked layers and an insulating layer interposed between the second gate electrode layer and the oxide semiconductor stacked layers. The thickness of a channel formation region is smaller than the other regions in the oxide semiconductor stacked layers. Further in this transistor, one of the gate electrode layers is provided as what is called a back gate for controlling the threshold voltage. Controlling the potential applied to the back gate enables control of the threshold voltage of the transistor, which makes it easy to maintain the normally-off characteristics of the transistor.

Abstract: A transistor includes oxide semiconductor stacked layers between a first gate electrode layer and a second gate electrode layer through an insulating layer interposed between the first gate electrode layer and the oxide semiconductor stacked layers and an insulating layer interposed between the second gate electrode layer and the oxide semiconductor stacked layers. The thickness of a channel formation region is smaller than the other regions in the oxide semiconductor stacked layers. Further in this transistor, one of the gate electrode layers is provided as what is called a back gate for controlling the threshold voltage. Controlling the potential applied to the back gate enables control of the threshold voltage of the transistor, which makes it easy to maintain the normally-off characteristics of the transistor.

Abstract: An object is to provide a transistor in which light deterioration is suppressed as much as possible and electrical characteristics are stable, and a semiconductor device including the transistor. The attention focuses on the fact that light is reflected by a film used for forming a transistor and multiple interaction occurs. When the optical thickness of the film which causes the reflection is roughly an odd multiple of ?0/4 or roughly an even multiple of ?0/4, reflectance in a wavelength region of light which is absorbed by an oxide semiconductor is increased without a loss of a function of the film with respect to the transistor, whereby the amount of light absorbed by the oxide semiconductor is reduced and an effect of reducing light deterioration is increased.

Abstract: A semiconductor device includes a transistor including a gate electrode over a substrate, a gate insulating film covering the gate electrode, a multilayer film overlapping with the gate electrode with the gate insulating film provided therebetween, and a pair of electrodes in contact with the multilayer film, and an oxide insulating film covering the transistor. The multilayer film includes an oxide semiconductor film and an oxide film containing In or Ga, the oxide insulating film contains more oxygen than that in the stoichiometric composition, and in the transistor, by a bias-temperature stress test, threshold voltage does not change or the amount of the change in a positive direction or a negative direction is less than or equal to 1.0 V, preferably less than or equal to 0.5 V.

Abstract: To reduce defects in an oxide semiconductor film in a semiconductor device. To improve the electrical characteristics and the reliability of a semiconductor device including an oxide semiconductor film. In a semiconductor device including a transistor including a gate electrode formed over a substrate, a gate insulating film covering the gate electrode, a multilayer film overlapping with the gate electrode with the gate insulating film provided therebetween, and a pair of electrodes in contact with the multilayer film, a first oxide insulating film covering the transistor, and a second oxide insulating film formed over the first oxide insulating film, the multilayer film includes an oxide semiconductor film and an oxide film containing In or Ga, the first oxide insulating film is an oxide insulating film through which oxygen is permeated, and the second oxide insulating film is an oxide insulating film containing more oxygen than that in the stoichiometric composition.

Abstract: In a semiconductor device including a transistor including a gate electrode formed over a substrate, a gate insulating film covering the gate electrode, a multilayer film overlapping with the gate electrode with the gate insulating film provided therebetween, and a pair of electrodes in contact with the multilayer film, a first oxide insulating film covering the transistor, and a second oxide insulating film formed over the first oxide insulating film, the multilayer film includes an oxide semiconductor film and an oxide film containing In or Ga, the oxide semiconductor film has an amorphous structure or a microcrystalline structure, the first oxide insulating film is an oxide insulating film through which oxygen is permeated, and the second oxide insulating film is an oxide insulating film containing more oxygen than that in the stoichiometric composition.

Abstract: To provide a semiconductor device including a capacitor whose charge capacity is increased without reducing the aperture ratio. The semiconductor device includes a transistor including a light-transmitting semiconductor film, a capacitor where a dielectric film is provided between a pair of electrodes, an insulating film provided over the light-transmitting semiconductor film, and a light-transmitting conductive film provided over the insulating film. In the capacitor, a metal oxide film containing at least indium (In) or zinc (Zn) and formed on the same surface as the light-transmitting semiconductor film in the transistor serves as one electrode, the light-transmitting conductive film serves as the other electrode, and the insulating film provided over the light-transmitting semiconductor film serves as the dielectric film.

Abstract: A transistor including an oxide semiconductor film, in which the threshold voltage is prevented from being a negative value, is provided. A high quality semiconductor device having the transistor including an oxide semiconductor film is provided. A transistor includes an oxide semiconductor film having first to third regions. The top surface of the oxide semiconductor film in the first region is in contact with a source electrode or a drain electrode. The top surface of the oxide semiconductor film in the second region is in contact with a protective insulating film. The thickness of the second region is substantially uniform and smaller than the maximum thickness of the first region. The top surface and a side surface of the oxide semiconductor film in the third region are in contact with the protective insulating film.

Abstract: A transistor includes oxide semiconductor stacked layers between a first gate electrode layer and a second gate electrode layer through an insulating layer interposed between the first gate electrode layer and the oxide semiconductor stacked layers and an insulating layer interposed between the second gate electrode layer and the oxide semiconductor stacked layers. The thickness of a channel formation region is smaller than the other regions in the oxide semiconductor stacked layers. Further in this transistor, one of the gate electrode layers is provided as what is called a back gate for controlling the threshold voltage. Controlling the potential applied to the back gate enables control of the threshold voltage of the transistor, which makes it easy to maintain the normally-off characteristics of the transistor.

Abstract: An object is to provide a transistor in which light deterioration is suppressed as much as possible and electrical characteristics are stable, and a semiconductor device including the transistor. The attention focuses on the fact that light is reflected by a film used for forming a transistor and multiple interaction occurs. When the optical thickness of the film which causes the reflection is roughly an odd multiple of ?0/4 or roughly an even multiple of ?0/4, reflectance in a wavelength region of light which is absorbed by an oxide semiconductor is increased without a loss of a function of the film with respect to the transistor, whereby the amount of light absorbed by the oxide semiconductor is reduced and an effect of reducing light deterioration is increased.

Abstract: A processing machine has a main spindle apparatus and a tool holder which clamps a working tool. The main spindle apparatus detachably supports the tool holder and rotates. Oil mist is transported to the working tool through a lubricant supplying pipe in the main spindle apparatus. A coolant hose is formed in the tool holder. A supporting member is composed mainly of a sleeve and a draw bar. The supporting member air-tightly supports the coolant hose of the tool holder. A ring-shaped packing is placed between the lubricant supplying pipe and the supporting member in order to prevent any leakage of the oil mist. The periphery of the packing has two divided sub-parts of a character “Y” shape. The leaking oil mist expands one sub-part of the packing to air-tightly seal the gap formed between the lubricant supplying pipe and the draw bar.

Abstract: Piperidine derivatives having the formula ##STR1## wherein R' represents an alkyl, an acyl, an alkoxycarbonyl, an amino or nitroso group;X represents oxygen or sulfur;Y represents oxygen, sulfur or a group of the formula .dbd.N--R" in which R" is hydrogen or alkyl;Z represents oxygen or a group of the formula >N--R'" in which R'" is hydrogen or alkyl;n is an integer of 1 to 4; andR represents, when n is 1, alkyl, aryl, cycloalkyl, alkoxycarbonyl, substituted phosphino or substituted phosphinyl, when n is 2, alkylene, alkenylene, arylene, aralkylene; alkylenediphenylene, bis-(alkoxycarbonyl) alkylene, alkylene-bis-(oxycarbonylalkyl), dialkylene ether or diphenylene ether, when n is 3, alkanetriyl,tris-(alkoxycarbonyl)alkanetriyl, alkanetriyl-tris-(oxycarbonylalkyl) or a group of the formula ##STR2## in which p is an integer of 1 through 8 inclusive, and, when n is 4, alkanetetrayl,tetrakis-(alkoxycarbonyl) alkanetetrayl or alkanetetrayl-tetrakis-(oxycarbonylalkyl).

Abstract: A novel piperidine derivative having a stabilizing effect on a synthetic polymeric material and a composition comprising said piperidine derivative and a synthetic polymeric material.

Abstract: A novel piperidine derivative having a stabilizing effect on a synthetic polymeric material and a composition comprising said piperidine derivative and a synthetic polymeric material.

Abstract: A new ester of chrysanthemic acid having the formula ##STR1## wherein R.sub.1, R.sub.2 and R.sub.3 are the same or different and each represents a hydrogen atom, a lower alkyl group or a halogen atom which exhibits insecticidal activity. The ester is prepared by reacting a 2,3-dihydro-3-benzofuranol derivative having the formula ##STR2## wherein R.sub.1, R.sub.2 and R.sub.3 are the same as above with chrysanthemic acid or an active ester thereof such as the halogenide and the anhydride.

Abstract: A synthetic polymer composition stabilized against photo- and thermal-deterioration comprising a stabilizing amount of a compound having the formula ##STR1## wherein R' represents an alkyl, an acyl, an alkoxycarbonyl, an amino or nitroso group;X represents oxygen or sulfur;Y represents oxygen, sulfur or a group of the formula = N - R" in which R" is hydrogen or alkyl;Z represents oxygen or a group of the formula >N - R'" in which R'" is hydrogen or alkyl;N is an integer of 1 to 4; andR represents, when n is 1, alkyl, aryl, cycloalkyl, alkoxycarbonyl, substituted phosphino or substituted phosphinyl, when n is 2, alkylene, alkenylene, arylene, aralkylene; alkylenediphenylene, bis-(carboxycarbonyl) alkylene, alkylene-bis-(oxycarbonylalkyl), dialkylene ether or diphenylene ether, when n is 3, alkanetriyl, tris-(alkoxycarbonyl)alkanetriyl, alkanetriyl-tris-(oxycarbonylalkyl) or a group of the formula ##STR2## in which p is an integer of 1 through 8 inclusive, and, when n is 4, alkanetetrayl,tetrakis-(alkoxycarb

Abstract: A synthetic polymer composition stabilized against photo- and thermal deterioration thereof wherein there is incorporated, in a sufficient amount to prevent such deterioration, bipiperidyl derivatives.

Abstract: A novel piperidine derivative having a stabilizing effect on a synthetic polymeric material and a composition comprising said piperidine derivative and a synthetic polymeric material.

Abstract: Novel piperidine derivatives of formula: ##STR1## (wherein 2 or 3 of R.sub.1, R.sub.2, R.sub.3, R.sub.4 and R.sub.5 represent alkyl groups having from 1 to 4 carbon atoms and the remainder of R.sub.1, R.sub.2, R.sub.3, R.sub.4 and R.sub.5 are hydrogen atoms, and R.sub.6 represents a hydrogen atom, an alkyl group, an alkenyl group, an alkynyl group, a substituted alkyl group, an aliphatic acyl group, an alkoxycarbonyl group or an aralkoxycarbonyl group) are useful as stabilizers for synthetic polymers.

Abstract: A new piperidine derivative and a synthetic polymer composition stabilized against photo- and thermal deterioration thereof wherein there is incorporated, in a sufficient amount to prevent such deterioration, said piperidine derivative.