Abstract: In the present disclosure, a cutting implement includes a blade body including a base portion and a cutting edge portion connected to an end portion of the base portion. The base portion includes a first metal, and the cutting edge portion includes a second metal and hard particles having a hardness higher than the hardness of the second metal. The hard particles include first hard particles having a particle size of 20 ?m or more and 50 ?m or less.

Abstract: Provided is a thin-film forming raw material, which is used in an atomic layer deposition method, including a compound represented by the following general formula (1): M(R1)x1[A1-N(R2)(R3)]y1 ??(1) in the formula (1), R1, R2, and R3 each independently represent a linear or branched alkyl group having 1 to 4 carbon atoms, A1 represents a linear or branched alkylene group having 1 to 5 carbon atoms, x1 represents an integer of from 0 to 2, y1 represents an integer of from 1 to 3, and M represents an indium atom or a zinc atom, provided that when M represents an indium atom, a compound in which x1 represents 2, y1 represents 1, and R1, R2, and R3 each represent a methyl group is excluded.

Abstract: There are provided, for example, a reducing agent that can be used in a chemical looping method, a method of producing a gas using such a reducing agent and a method of increasing conversion efficiency, through which the efficiency of converting carbon dioxide into carbon monoxide is high. The reducing agent of the present invention is a reducing agent that produces valuables containing carbon by reducing carbon dioxide, including a granular support having a plurality of pores and an angle of repose of 45° or more and an oxygen carrier which is supported on the support and has oxygen ion conductivity. In addition, in the reducing agent of the present invention, the support preferably has an average pore size of 0.1 nm or more.

Abstract: A radiation detector includes a sensor panel having a light receiving surface, a first scintillator panel and a second scintillator panel disposed on the light receiving surface in a state of being adjacent to each other along the light receiving surface, and an adhesive layer. The first scintillator panel has a first substrate and a first scintillator layer including a plurality of columnar crystals. The second scintillator panel has a second substrate and a second scintillator layer including a plurality of columnar crystals. The first scintillator layer reaches at least a first portion of the first substrate. The second scintillator layer reaches at least a second portion of the second substrate. The adhesive layer is provided continuous over the first scintillator panel and the second scintillator panel.

Abstract: A scintillator panel includes a substrate made of an organic material, a barrier layer formed on the substrate and including thallium iodide as a main component, and a scintillator layer formed on the barrier layer and including cesium iodide as a main component. According to this scintillator panel, moisture resistance can be improved by providing the barrier layer between the substrate and the scintillator layer.

Abstract: A scintillator panel includes: a first flexible support body having a first surface and a second surface on a side opposite to the first surface; a scintillator layer formed on the first surface and containing a plurality of columnar crystals; a second flexible support body provided on the second surface; an inorganic layer provided on the second flexible support body so as to be interposed between the second surface and the second flexible support body; and a first adhesive layer bonding the second surface and the inorganic layer to each other. A radiation detector includes: the scintillator panel; and a sensor panel including a photoelectric conversion element, in which the scintillator panel is provided on the sensor panel such that the first surface is on the sensor panel side with respect to the second surface.

Abstract: A radiation detector includes: a sensor panel; a scintillator panel; and a resin frame provided across the sensor panel and the scintillator panel, in which the sensor panel has a mounting surface where the scintillator panel is mounted, the scintillator panel includes a support body having a first surface, a second surface on a side opposite to the first surface, and a first side surface connecting the first surface and the second surface to each other, and a scintillator layer formed on the first surface and containing a plurality of columnar crystals, the scintillator panel is mounted on the mounting surface such that the scintillator layer and the first surface face the mounting surface, and the scintillator layer has a second side surface extending so as to be positioned on the same plane as the first side surface.

Abstract: A reflective photomask blank includes a substrate, a multilayer reflection film that reflects exposure light being light in extreme ultraviolet range, a protection film, a light-absorbing film that absorbs the exposure light, and a hard mask film that is formed in contact with the light-absorbing film. The hard mask film is constituted by a multilayer including a first layer disposed at the side remotest from the substrate, and is composed of a material that is resistant to chlorine-based dry etching, and removable by fluorine-based dry etching, and a second layer composed of a material that is resistant to fluorine-based dry etching, and removable by chlorine-based dry etching. An etching clear time of the light-absorbing film on fluorine-based dry etching under one condition is longer than an etching clear time of the first layer on the fluorine-based dry etching under the same condition.

Abstract: A reflective photomask blank includes a substrate, a multilayer reflection film that is formed on the substrate and reflects exposure light being light in extreme ultraviolet range, a protection film that is formed on the multilayer reflection film to protect the multilayer reflection film, a light-absorbing film that is formed on the protection film and absorbs the exposure light, and a hard mask film that is formed on and in contact with the light-absorbing film and functions as a hard mask in pattering the light-absorbing film by dry etching. The hard mask film is constituted by a multilayer including a first layer and a second layer, the first layer is disposed at the side remotest from the substrate, and is composed of a material containing silicon and free of chromium, and the second layer is composed of a material containing chromium and free of silicon.

Abstract: A halftone phase shift-type photomask blank including a transparent substrate, and a halftone phase shift film formed on the substrate, and including at least one layer composed of silicon, nitrogen and oxygen is provided. The halftone phase shift film has a phase shift of at least 150° and up to 200° and a transmittance of at least 20%, with respect to exposure light having a wavelength of up to 200 nm, and a film surface having a surface roughness RMS of up to 0.8 nm, and an in-plane variation of transmittance calculated from the maximum transmittance Tmax and the minimum transmittance Tmin within a mask pattern forming area by the expression: (Tmax?Tmin)/(Tmax+Tmin)×100 is up to 2%.

Abstract: A halftone phase shift-type photomask blank including a transparent substrate, and a halftone phase shift film formed on the substrate, and including at least one layer composed of silicon, nitrogen and oxygen is provided. The halftone phase shift film has a phase shift of at least 150° and up to 200° and a transmittance of at least 20%, with respect to exposure light having a wavelength of up to 200 nm, and a film surface having a surface roughness RMS of up to 0.8 nm, and an in-plane variation of transmittance calculated from the maximum transmittance Tmax and the minimum transmittance Tmin within a mask pattern forming area by the expression: (Tmax?Tmin)/(Tmax+Tmin)×100 is up to 2%.