Abstract: A semiconductor memory device including: plural first conductive layers stacked on a substrate; plural second conductive layers each stacked between the first conductive layers; a pillar that extends in a stacking direction of the first and second conductive layers and forms plural memory cells at intersections of the first and second conductive layers in a region where first and second conductive layers are arranged; a first contact plug that extends in the stacking direction of the first and second conductive layers and is connected to the first conductive layers in the region where the first and second conductive layers are arranged; and a second contact plug that extends in the stacking direction of the first and second conductive layers and is connected to the second conductive layers in the region where the first conductive layers and second conductive layers are arranged.

Abstract: According to one embodiment, a memory system includes a nonvolatile semiconductor storage device and a memory controller. The nonvolatile semiconductor storage device includes at least one memory device including a plurality of memory cells corresponding to a plurality of pages. The memory controller is configured to control the nonvolatile semiconductor storage device. The pages include a first page. The memory controller is configured to: read first data stored in the first page from the nonvolatile semiconductor storage device; correct a fail bit included in the read first data; generate first spare data including information on the fail bit corrected in the read first data; and store the first spare data in the nonvolatile semiconductor storage device.

Abstract: A memory chip unit includes a pad electrode including first and second portions, and a memory cell array. A prober includes a probe card and a movement mechanism. The probe card includes a probe electrode to be in contact with the pad electrode, and a memory controller electrically coupled to the probe electrode and executes reading and writing on the memory cell array. The movement mechanism executes a first operation that brings the probe electrode into contact with the first portion and does not bring the probe electrode into contact with the second portion, and a second operation that does not bring the probe electrode into contact with the first portion and brings the probe electrode into contact with the second portion.

Abstract: A plate-making method for manufacturing a printing plate includes: manufacturing the printing plate based on a knockout method in which knockouts of halftone dots in one color are formed, and halftone dots in the other color are overprinted onto positions of the knockouts; for each of pixels, when a sum of a halftone dot area ratio of the one color and a halftone dot area ratio of the other color is smaller than 100%, forming a gap from a knockout in the one color around a halftone dot in the other color; and for each of pixels, when the sum of the halftone dot area ratio of the one color and the halftone dot area ratio of the other color is greater than 100%, forming an overmask such that the halftone dot in the other color penetrates a periphery of the halftone dot in the one color.

Abstract: A plate-making method for manufacturing a printing plate includes: manufacturing the printing plate based on a knockout method in which knockouts of halftone dots in one color are formed, and halftone dots in the other color are overprinted onto positions of the knockouts; for each of pixels, when a sum of a halftone dot area ratio of the one color and a halftone dot area ratio of the other color is smaller than 100%, forming a gap from a knockout in the one color around a halftone dot in the other color; and for each of pixels, when the sum of the halftone dot area ratio of the one color and the halftone dot area ratio of the other color is greater than 100%, forming an overmask such that the halftone dot in the other color penetrates a periphery of the halftone dot in the one color.