Abstract: An inorganic structure body has a free-standing structure including a fibrous member and/or a shell. The fibrous member and/or the shell include a metal and/or an inorganic material and have a three-dimensionally continuous configuration. The free-standing structure may have a structure that is based on a nonwoven fabric or a porous membrane used as a substrate.

Abstract: An inorganic structure body has a free-standing structure including a fibrous member and/or a shell. The fibrous member and/or the shell include a metal and/or an inorganic material and have a three-dimensionally continuous configuration. The free-standing structure may have a structure that is based on a nonwoven fabric or a porous membrane used as a substrate.

Abstract: A seed crystal for SiC single-crystal growth includes a facet formation region containing a {0001}-plane uppermost portion and n (n>=3) planes provided enclosing the periphery of the facet formation region. The seed crystal for SiC single-crystal growth satisfies the relationships represented by formula (a): Bkk-1<=cos?1(sin(2.3 degrees)/sin Ck), formula (b): Bkk<=cos?1(sin(2.3 degrees)/sin Ck), and formula (c): min(Ck)<=20 degrees. In the formulas, Ck is an offset angle of a k-th plane, Bkk-1 is an angle defined by an offset downstream direction of the k-th plane and a (k?1)-th ridge line, and Bkk is an angle defined by the offset downstream direction of the k-th plane and a k-th ridge line.

Abstract: A high heat-resistant member includes a graphite substrate including isotropic graphite and a carbide coating film including a carbide, such as tantalum carbide, and covering a surface of the graphite substrate, the carbide coating film having a randomly oriented isotropic grain structure in which crystallites having a size indexed by a full width at half maximum of a diffraction peak of an X-ray diffraction pattern of not more than 0.2° from (111) planes are accumulated at substantially random. The orientation of the carbide coating film is determined by whether degree of orientation (F) in any Miller plane calculated based on an XRD pattern using the Lotgering method is within a range from ?0.2 to 0.2.

Abstract: A seed crystal for SiC single-crystal growth includes a facet formation region containing a {0001}-plane uppermost portion and n (n>=3) planes provided enclosing the periphery of the facet formation region. The seed crystal for SiC single-crystal growth satisfies the relationships represented by formula (a): Bkk-1<=cos?1(sin(2.3 degrees)/sin Ck), formula (b): Bkk<=cos?1(sin(2.3 degrees)/sin Ck), and formula (c): min(Ck)<=20 degrees. In the formulas, Ck is an offset angle of a k-th plane, Bkk-1 is an angle defined by an offset downstream direction of the k-th plane and a (k?1)-th ridge line, and Bkk is an angle defined by the offset downstream direction of the k-th plane and a k-th ridge line.

Abstract: When an SiC single crystal having a large diameter of a {0001} plane is produced by repeating a-plane growth, the a-plane growth of the SiC single crystal is carried out so that a ratio Sfacet (=S1×100/S2) of an area (S1) of a Si-plane side facet region to a total area (S2) of the growth plane is maintained at 20% or less.

Abstract: When an SiC single crystal having a large diameter of a {0001} plane is produced by repeating a-plane growth, the a-plane growth of the SiC single crystal is carried out so that a ratio Sfacet (=S1×100/S2) of an area (S1) of a Si-plane side facet region to a total area (S2) of the growth plane is maintained at 20% or less.

Abstract: A high heat-resistant member includes a graphite substrate including isotropic graphite and a carbide coating film including a carbide, such as tantalum carbide, and covering a surface of the graphite substrate, the carbide coating film having a randomly oriented isotropic grain structure in which crystallites having a size indexed by a full width at half maximum of a diffraction peak of an X-ray diffraction spectrum of not more than 0.2° from (111) planes are accumulated at substantially random. The orientation of the carbide coating film is determined by whether degree of orientation (F) in any Miller plane calculated based on an XRD spectrum using the Lotgering method is within a range from ?0.2 to 0.2.