Abstract: A piezoelectric resonator unit that includes a base, a cover, and a laminated structure disposed between the base and the cover. The laminated structure includes a piezoelectric resonator having a piezoelectric layer with a pair of principal surfaces facing each other, and a pair of excitation electrodes disposed on respective surfaces of the pair of principal surfaces so as to face each other with the piezoelectric layer therebetween, a semiconductor layer laminated on a side of one of the pair of principal surfaces of the piezoelectric layer, and a pair of measurement electrodes provided on the semiconductor layer. The pair of measurement electrodes measure signals based on temperature of the piezoelectric resonator through the semiconductor layer.

Abstract: A resonator is provided that includes a vibrator with two portions that vibrate in phases opposite to each other; a frame that is disposed to surround at least part of the vibrator; and a holding unit that supports a boundary between the two portions and connects the vibrator to the frame. Moreover, a frequency adjustment film is disposed on a surface of the vibrator in an area between a connection portion of the holding unit connected to the vibrator and an end of the vibrator that faces the connection portion in a direction along the boundary between the two portions.

Abstract: A resonance device that includes a lower cover, an upper cover joined to the lower cover, a resonator having vibrating arms that bend and vibrate in a vibration space between the lower cover and the upper cover, and particles attached to tip portions of the vibrating arms. When a median size of the particle is defined as D50, a specific gravity of the particle is defined as A, and a resonant frequency of the resonator is defined as X, D50?189/(X×?A).

Abstract: A resonance device includes a resonator, an upper lid, and a lower lid. The resonator includes a vibration portion, a frame, and holding arms. The vibration portion includes a base and a plurality of vibration arms. The lower lid has a protruding portion protruding between two adjacent vibration arms, the protruding portion has an insulating film, the vibration arms have a weight portion that has a conductive film formed on the insulating film, and in a direction in which the plurality of vibration arms extend, a first distance between the weight portion of any one of the two adjacent vibration arms and the holding portion is less than a second distance between the weight portion and the protruding portion.

Abstract: A resonator is provided that includes a vibrator with two portions that vibrate in phases opposite to each other; a frame that is disposed to surround at least part of the vibrator; and a holding unit that supports a boundary between the two portions and connects the vibrator to the frame. Moreover, a frequency adjustment film is disposed on a surface of the vibrator in an area between a connection portion of the holding unit connected to the vibrator and an end of the vibrator that faces the connection portion in a direction along the boundary between the two portions.

Abstract: A piezoelectric resonator unit that includes a base, a cover, and a laminated structure disposed between the base and the cover. The laminated structure includes a piezoelectric resonator having a piezoelectric layer with a pair of principal surfaces facing each other, and a pair of excitation electrodes disposed on respective surfaces of the pair of principal surfaces so as to face each other with the piezoelectric layer therebetween, a semiconductor layer laminated on a side of one of the pair of principal surfaces of the piezoelectric layer, and a pair of measurement electrodes provided on the semiconductor layer. The pair of measurement electrodes measure signals based on temperature of the piezoelectric resonator through the semiconductor layer.

Abstract: A resonance device that includes a lower cover, an upper cover joined to the lower cover, a resonator having vibrating arms that bend and vibrate in a vibration space between the lower cover and the upper cover, and particles attached to tip portions of the vibrating arms. When a median size of the particle is defined as D50, a specific gravity of the particle is defined as A, and a resonant frequency of the resonator is defined as X, D50?189/(X×?A).

Abstract: A resonance device includes a resonator, an upper lid, and a lower lid. The resonator includes a vibration portion, a frame, and holding arms. The vibration portion includes a base and a plurality of vibration arms. The lower lid has a protruding portion protruding between two adjacent vibration arms, the protruding portion has an insulating film, the vibration arms have a weight portion that has a conductive film formed on the insulating film, and in a direction in which the plurality of vibration arms extend, a first distance between the weight portion of any one of the two adjacent vibration arms and the holding portion is less than a second distance between the weight portion and the protruding portion.

Abstract: A resonator is provided having a first electrode and a second electrode; and a piezoelectric film that is disposed between the first and second electrodes, has an upper surface opposing the first electrode, and that vibrates in a predetermined vibration mode when a voltage is applied between the first and second electrodes. Moreover, the resonator includes a protective film made of an insulator and disposed opposing the upper surface of the piezoelectric film with the first electrode interposed therebetween. Furthermore, a conductive film made of a conductor is provided that is disposed opposing the upper surface of the piezoelectric film with the protective film interposed therebetween, where the conductive film is electrically connected to any one of the first and second electrodes.

Abstract: A resonator that includes a base and one or more vibration arms with fixed ends connected to a front end of the base and open ends extending therefrom. Moreover, the vibration arms include first and second electrodes and a piezoelectric film that is disposed therebetween. The resonator further includes a protective film disposed opposing an upper face of the piezoelectric film and sandwiching the first electrode and a temperature characteristics adjusting film formed of a material different from a material of the protective film and that is provided on the fixed end side relative to the center of the vibration arms such that part of the protective film is exposed to a surface.

Abstract: A MEMS device that suppresses variations in a resistance value caused by contracting vibrations in a direction in which a holding portion extends. The MEMS device includes a frame, a rectangular plate that receives an input of a driving signal, and holding portions that anchor the rectangular plate to the frame. The frame and the rectangular plate are both rectangular in shape. The holding portions are provided extending toward the frame from central areas of the opposing sides of the rectangular plate, and anchor the rectangular plate to the frame. A resistive film is formed in a region that follows a straight line connecting the holding portions that anchor the rectangular plate to the frame and that corresponds to no more than half a maximum displacement from a vibration distribution.

Abstract: A piezoelectric vibrator that includes a piezoelectric film with a pair of electrodes disposed on opposing sides of the piezoelectric film. Moreover, the vibrator includes first and second adjustment films with the first adjustment film covering the first surface of the piezoelectric film in a first region and the second adjustment film covering the first surface of the piezoelectric film in a second region that is different from the first region. Moreover, the second region of the piezoelectric film has a greater displacement than the first region when the piezoelectric vibrator vibrates.

Abstract: A resonator is provided having a first electrode and a second electrode; and a piezoelectric film that is disposed between the first and second electrodes, has an upper surface opposing the first electrode, and that vibrates in a predetermined vibration mode when a voltage is applied between the first and second electrodes. Moreover, the resonator includes a protective film made of an insulator and disposed opposing the upper surface of the piezoelectric film with the first electrode interposed therebetween. Furthermore, a conductive film made of a conductor is provided that is disposed opposing the upper surface of the piezoelectric film with the protective film interposed therebetween, where the conductive film is electrically connected to any one of the first and second electrodes.

Abstract: A resonator that includes a base and one or more vibration arms with fixed ends connected to a front end of the base and open ends extending therefrom. Moreover, the vibration arms include first and second electrodes and a piezoelectric film that is disposed therebetween. The resonator further includes a protective film disposed opposing an upper face of the piezoelectric film and sandwiching the first electrode and a temperature characteristics adjusting film formed of a material different from a material of the protective film and that is provided on the fixed end side relative to the center of the vibration arms such that part of the protective film is exposed to a surface.

Abstract: A vibrating device that is in the form of a rectangular plate having opposed long sides and opposed short sides, and that utilizes an expanding and contracting vibration mode in a direction of the short sides. The vibrating device includes a Si layer made of a degenerate semiconductor, a silicon oxide layer, a piezoelectric layer, and first and second electrodes through which a voltage is applied to the piezoelectric layer. When a total thickness of the Si layer is denoted by T1, a total thickness of the silicon oxide layer is denoted by T2, and the TCF in the vibrating device when the silicon oxide layer 3 is not provided is denoted by x(ppm/K), T2/(T1+T2) is within a range of (?0.0003x2?0.0256x+0.0008)±0.05.

Abstract: A vibrating device having tuning fork arms extending in a first direction that are joined to a base portion and are arranged side by side in an second direction. Each of the tuning fork arms has a structure that a silicon oxide layer is laminated on a Si layer made of a degenerate semiconductor, and that an excitation portion is provided on the silicon oxide layer. When a total thickness of the Si layer is denoted by T1, a total thickness of the silicon oxide layer is denoted by T2, and the temperature coefficient of resonant frequency (TCF) when the silicon oxide layer is not provided on the Si layer is denoted by x, a thickness ratio T2/(T1+T2) is within a range of (?0.0002x2?0.0136x+0.0014)±0.05.

Abstract: A vibrating device having a number 2N (N is an integer equal to 2 or larger) of tuning fork arms extending in a first direction are arranged side by side in a second direction. Phases of flexural vibrations of the number N of tuning fork arms positioned at a first side of an imaginary line A, which passes a center of a region in the second direction where the number 2N of tuning fork arms are disposed and which extends in the first direction, are symmetric to phases of flexural vibrations of the number N of tuning fork arms positioned at a second side of the imaginary line opposite the first side.

Abstract: A MEMS device that suppresses variations in a resistance value caused by contracting vibrations in a direction in which a holding portion extends. The MEMS device includes a frame, a rectangular plate that receives an input of a driving signal, and holding portions that anchor the rectangular plate to the frame. The frame and the rectangular plate are both rectangular in shape. The holding portions are provided extending toward the frame from central areas of the opposing sides of the rectangular plate, and anchor the rectangular plate to the frame. A resistive film is formed in a region that follows a straight line connecting the holding portions that anchor the rectangular plate to the frame and that corresponds to no more than half a maximum displacement from a vibration distribution.

Abstract: A vibrating device having a number 2N (N is an integer equal to 2 or larger) of tuning fork arms extending in a first direction are arranged side by side in a second direction. Phases of flexural vibrations of the number N of tuning fork arms positioned at a first side of an imaginary line A, which passes a center of a region in the second direction where the number 2N of tuning fork arms are disposed and which extends in the first direction, are symmetric to phases of flexural vibrations of the number N of tuning fork arms positioned at a second side of the imaginary line opposite the first side.

Abstract: A vibrating device having tuning fork arms extending in a first direction that are joined to a base portion and are arranged side by side in an second direction. Each of the tuning fork arms has a structure that a silicon oxide layer is laminated on a Si layer made of a degenerate semiconductor, and that an excitation portion is provided on the silicon oxide layer. When a total thickness of the Si layer is denoted by T1, a total thickness of the silicon oxide layer is denoted by T2, and the temperature coefficient of resonant frequency (TCF) when the silicon oxide layer is not provided on the Si layer is denoted by x, a thickness ratio T2/(T1+T2) is within a range of (?0.0002x2?0.0136x+0.0014)±0.05.