Abstract: A method of producing an AlxGa(1-x)N (0<x?1) single crystal is directed to growing an AlxGa(1-x)N single crystal by sublimation. The method includes the steps of preparing an underlying substrate having a composition ratio x identical to the composition ratio of the AlxGa(1-x)N single crystal, preparing a raw material of high purity, and growing an AlxGa(1-x)N single crystal on the underlying substrate by sublimating the raw material. The AlxGa(1-x)N single crystal has an absorption coefficient less than or equal to 100 cm?1 with respect to light at a wavelength greater than or equal to 250 nm and less than 300 nm, and an absorption coefficient less than or equal to 21 cm?1 with respect to light at a wavelength greater than or equal to 300 nm and less than 350 nm.

Abstract: Affords an AlxGa1-xN single crystal suitable as an electromagnetic wave transmission body, and an electromagnetic wave transmission body that includes the AlxGa1-xN single crystals. The AlxGa1-xN (0<x?1) single crystal (2) has a dielectric loss tangent of 5×10?3 or lower with a radio frequency signal of at least either 1 MHz or 1 GHz having been applied to the crystal at an atmospheric temperature of 25° C. An electromagnetic wave transmission body (4) includes the AlxGa1-xN single crystal, which has a major surface (2m), wherein the AlxGa1-xN single crystal (2) has a dielectric loss tangent of 5×10?3 or lower with an RF signal of at least either 1 MHz or 1 GHz having been applied thereto at an atmospheric temperature of 25° C.

Abstract: Affords an AlN crystal growth method, and an AlN laminate, wherein AlN of favorable crystalline quality is grown. The AlN crystal growth method is provided with the following steps. To begin with, a source material (17) containing AlN is prepared. A heterosubstrate (11), having a major surface (11a), is prepared. The source material (17) is sublimed to grow AlN crystal so as to cover the major surface (11a) of the heterosubstrate (11), whereby a first layer (12) with a flat face (12a) is formed. The source material (17) is sublimed to form onto the face (12a) of the first layer (12) a second layer (13) made of AlN. The second layer (13) is formed at a higher temperature than is the first layer (12).

Abstract: A compound semiconductor single-crystal manufacturing device (1) is furnished with: a laser light source (6) making it possible to sublime a source material by directing a laser beam onto the material; a reaction vessel (2) having a laser entry window (5) through which the laser beam output from the laser light source (6) can be transmitted to introduce the beam into the vessel interior, and that is capable of retaining a starting substrate (3) where sublimed source material is recrystallized; and a heater (7) making it possible to heat the starting substrate (3). The laser beam is shone on, to heat and thereby sublime, the source material within the reaction vessel (2), and compound semiconductor single crystal is grown by recrystallizing the sublimed source material onto the starting substrate (3); afterwards the laser beam is employed to separate the compound semiconductor single crystal from the starting substrate (3).

Abstract: Affords a method of growing large-scale, high-quality AlxGa1-xN single crystal. An AlxGa1-xN single crystal growth method is provided with: a step of preparing an AlyGa1-yN (0<y?1) seed crystal (4) whose crystal diameter D mm and thickness T mm satisfy the relation T<0.003D+0.15; and a step of growing AlxGa1-xN (0<x?1) single crystal (5) onto a major surface (4m) of the AlyGa1-yN seed crystal (4) by sublimation growth.

Abstract: The present invention makes available an AlN crystal growth method enabling large-area, thick AlN crystal to be stably grown. An AlN crystal growth method of the present invention is provided with a step of preparing an SiC substrate (4) having a major face (4m) with a 0 cm?2 density of micropipes (4mp) having tubal diameters of down to 1000 ?m, and a not greater than 0.1 cm?2 density of micropipes (4mp) having tubal diameters of between 100 ?m and less than 1000 ?m; and a step of growing AlN crystal (5) onto the major face (4m) by vapor-phase deposition.

Abstract: Flat, thin AlN membranes and methods of their manufacture are made available. An AlN thin film (2) contains between 0.001 wt. % and 10 wt. % additive atomic element of one or more type selected from Group-III atoms, Group-IV atoms and Group-V atoms. Onto a base material (1), the AlN thin film (2) is formable utilizing a plasma generated by setting inside a vacuum chamber an sintered AlN ceramic containing between 0.001 wt. % and 10 wt. % additive atomic element of one or more type selected from Group-III atoms, Group-IV atoms and Group-V atoms, and with the base material having been set within the vacuum chamber, irradiating the sintered AlN ceramic with a laser.

Abstract: Methods of growing and manufacturing aluminum nitride crystal, and aluminum nitride crystal produced by the methods. Preventing sublimation of the starting substrate allows aluminum nitride crystal of excellent crystallinity to be grown at improved growth rates. The aluminum nitride crystal growth method includes the following steps. Initially, a laminar baseplate is prepared, furnished with a starting substrate having a major surface and a back side, a first layer formed on the back side, and a second layer formed on the first layer. Aluminum nitride crystal is then grown onto the major surface of the starting substrate by vapor deposition. The first layer is made of a substance that at the temperatures at which the aluminum nitride crystal is grown is less liable to sublimate than the starting substrate. The second layer is made of a substance whose thermal conductivity is higher than that of the first layer.

Abstract: The present III-nitride crystal manufacturing method, a method of manufacturing a III-nitride crystal (20) having a major surface (20m) of plane orientation other than {0001}, designated by choice, includes: a step of slicing III-nitride bulk crystal (1) into a plurality of III-nitride crystal substrates (10p), (10q) having major surfaces (10pm), (10qm) of the designated plane orientation; a step of disposing the substrates (10p), (10q) adjoining each other sideways in such a way that the major surfaces (10pm), (10qm) of the substrates (10p), (10q) parallel each other and so that the [0001] directions in the substrates (10p), (10q) are oriented in the same way; and a step of growing III-nitride crystal (20) onto the major surfaces (10pm), (10qm) of the substrates (10p), (10q).

Abstract: A method for growing a Group III nitride semiconductor crystal is provided with the following steps: First, a chamber including a heat-shielding portion for shielding heat radiation from a material 13 therein is prepared. Then, material 13 is arranged on one side of heat-shielding portion in chamber. Then, by heating material to be sublimated, a material gas is deposited on the other side of heat-shielding portion in chamber so that a Group III nitride semiconductor crystal is grown.

Abstract: A manufacturing method for a large-scale diamond substrate and the produced substrate that is suitable for semiconductor lithography processing and large-scale optical parts, semiconductor materials, thermal-release substrate, semiconductor wafer processing, back-feed devices, and others. The manufacturing method of the present invention includes: preparing a substrate having a main face including a first region which is a concave and a second region which surrounds the first region, and mounting, on the first region, a single crystalline diamond seed substrate having a plate thickness thicker than the concave depth of the first region; forming a CVD diamond layer from the single crystalline diamond seed substrate using a chemical vapor deposition, and mutually connecting by forming a CVD diamond layer on the second region at the same time; and polishing to substantially flatten both the CVD diamond layers and on the second region by mechanically polishing.

Abstract: The present invention provides a manufacturing method for a large-scale diamond substrate and a substrate produced by the method suitable for semiconductor lithography processing and large-scale optical parts, semiconductor materials, thermal-release substrate, semiconductor wafer processing, and back-feed devices, and others.