Abstract: The objective of the present invention is to provide: a spherical magnesium oxide which has high sphericity and excellent moisture resistance, and has excellent fluidity by which a resin composition exhibits excellent fluidity when filled in a resin; and a method for producing the same. The present invention is a spherical magnesium oxide characterized in that: 10-2000 ppm of boron is contained; the total content of silicon and phosphorus is 300-4000 ppm; and the sphericity that can be read from the SEM photograph is 1.00-1.10, when the volume-based cumulative 50% particle diameter (D50) measured by means of a laser diffraction scattering particle size distribution measurement, is in the range of 3-200 ?m.

Abstract: The objective of the present invention is to provide: a spherical magnesium oxide which has high sphericity and excellent moisture resistance, and has excellent fluidity by which a resin composition exhibits excellent fluidity when filled in a resin; and a method for producing the same. The present invention is a spherical magnesium oxide characterized in that: 10-2000 ppm of boron is contained; the total content of silicon and phosphorus is 300-4000 ppm; and the sphericity that can be read from the SEM photograph is 1.00-1.10, when the volume-based cumulative 50% particle diameter (D50) measured by means of a laser diffraction scattering particle size distribution measurement, is in the range of 3-200 ?m.

Abstract: The purpose of the present invention is to provide: spherical magnesium oxide having high sphericity, exceptional moisture resistance, and exceptional fluidity in a resin composition when a resin is filled therewith. The present invention is a spherical magnesium oxide characterized by containing 300-2000 ppm of boron, by the content of lithium being less than 15 ppm, and by the sphericity read from an SEM photograph in a volume-based cumulative 50% particle diameter (D50) range of 3-200 ?m by laser diffraction scattering particle size distribution measurement being 1.00-1.20.

Abstract: The objective of the present invention is to provide: a spherical magnesium oxide which has high sphericity and excellent moisture resistance, and has excellent fluidity by which a resin composition exhibits excellent fluidity when filled in a resin; and a method for producing the same. The present invention is a spherical magnesium oxide characterized in that: 10-2000 ppm of boron is contained; the total content of silicon and phosphorus is 300-4000 ppm; and the sphericity that can be read from the SEM photograph is 1.00-1.10, when the volume-based cumulative 50% particle diameter (D50) measured by means of a laser diffraction scattering particle size distribution measurement, is in the range of 3-200 ?m.

Abstract: A semiconductor device, includes: a first semiconductor chip including a first semiconductor substrate; and a second semiconductor chip including a second semiconductor substrate, wherein the first semiconductor substrate has a first substrate main surface and a first substrate back surface facing opposite directions in a first direction, and includes a first region and a second region disposed on the first substrate main surface, wherein the first semiconductor chip includes: a first MOSFET of a first type structure formed to include the first region; and a control circuit formed to include the second region, wherein the second semiconductor chip includes a second MOSFET of a second type structure formed to include the second semiconductor substrate, and wherein the second type structure is different from the first type structure.

Abstract: A semiconductor device, includes: a first semiconductor chip including a first semiconductor substrate; and a second semiconductor chip including a second semiconductor substrate, wherein the first semiconductor substrate has a first substrate main surface and a first substrate back surface facing opposite directions in a first direction, and includes a first region and a second region disposed on the first substrate main surface, wherein the first semiconductor chip includes: a first MOSFET of a first type structure formed to include the first region; and a control circuit formed to include the second region, wherein the second semiconductor chip includes a second MOSFET of a second type structure formed to include the second semiconductor substrate, and wherein the second type structure is different from the first type structure.

Abstract: A power supply circuit has, for example, an overshoot suppressor 100, a control circuit 10, a first transistor M1, a second transistor M2, an inductor L, a capacitor C1, resistors R1 and R2, and an error amplifier ERR. As the load becomes light, the ON-period of the second transistor M2 increases. When the load RL turns from a heavy load to a light or no load, the overshoot suppressor 100 detects an increase in the ON-period of the second transistor M2, and then forcibly turns OFF the second transistor M2. Thus, an overshoot in the output voltage Vo is suppressed. Detecting an increase in the period for which the driving signal S2remains at high level H helps reduce malfunctioning due to noise.

Abstract: A power supply circuit has, for example, an overshoot suppressor 100, a control circuit 10, a first transistor M1, a second transistor M2, an inductor L, a capacitor C1, resistors R1 and R2, and an error amplifier ERR. As the load becomes light, the ON-period of the second transistor M2 increases. When the load RL turns from a heavy load to a light or no load, the overshoot suppressor 100 detects an increase in the ON-period of the second transistor M2, and then forcibly turns OFF the second transistor M2. Thus, an overshoot in the output voltage Vo is suppressed. Detecting an increase in the period for which the driving signal S2 remains at high level H helps reduce malfunctioning due to noise.

Abstract: [Problem] To provide: a novel oil or fat composition, particularly an oil or fat composition having excellent heating resistance; and a method for producing the oil or fat composition. [Solution] The oil or fat composition according to the present invention comprises (I) a palm-based fractionated oil or fat in which the ratio of the content of tripalmitin relative to the content of triglyceride is 70 to 90 wt % and the ratio of the content of unsaturated fatty acids relative to the total content of all of fatty acids is 1 to 8 wt % and (II) a base oil having a melting point of lower than 10° C., wherein the content of the component (I) is 0.05 to 15 wt % relative to the whole weight of the oil or fat composition and the content of the component (II) is 85 to 99.95 wt % relative to the whole weight of the oil or fat composition.

Abstract: The semiconductor device has a backside electrode disposed on a backside of the semiconductor substrate and including multiple layers of metal. The backside electrode includes, on the semiconductor substrate, a first layer of aluminum, a second layer of barrier metal, a third layer of nickel, a fourth layer of silver and a fifth layer of gold which are disposed in this order.

Abstract: The semiconductor device has a backside electrode disposed on a backside of the semiconductor substrate and including multiple layers of metal. The backside electrode includes, on the semiconductor substrate, a first layer of aluminum, a second layer of barrier metal, a third layer of nickel, a fourth layer of silver and a fifth layer of gold which are disposed in this order.