Abstract: A solid-state imaging apparatus includes a pixel including: a photoelectric converter that generates a signal charge corresponding to incident light; a charge storage section that is connected to the photoelectric converter and accumulates signal charge; a reset transistor; an amplifying transistor; and a cutoff transistor, wherein the amplifying transistor and the cutoff transistor form a negative feedback amplifying circuit.

Abstract: An image acquisition device includes an optical system, an illumination angle adjustment mechanism, and a stage. The optical system has a lens and a light source disposed in the focal plane of the lens, and generates a collimated illumination light. The illumination angle adjustment mechanism is configured so as to be able to change the irradiation direction of the illumination light with respect to an object. A module is detachably loaded on a stage. The module includes the object and an image sensor which are integrated such that the illumination light transmitted through the object is incident on the image sensor. The stage has a circuit for receiving an output of the image sensor in a state where the module is loaded on the stage.

Abstract: A solid-state imaging apparatus includes a pixel including: a photoelectric converter that generates a signal charge corresponding to incident light; a charge storage section that is connected to the photoelectric converter and accumulates signal charge; a reset transistor; an amplifying transistor; and a cutoff transistor, wherein the amplifying transistor and the cutoff transistor form a negative feedback amplifying circuit.

Abstract: The present invention provides a solid-state imaging apparatus that can significantly reduce kTC noise by using a negative feedback amplifying circuit. A solid-state imaging apparatus includes a pixel unit including a plurality of pixels arranged on a semiconductor substrate in a matrix, the pixel unit including, for each column, a source line and a column signal line, each of the plurality of pixels including: a photoelectric conversion unit that generates a signal charge corresponding to incident light; a storage unit storing the signal charge; a reset transistor; an amplifying transistor; and a cutoff transistor, wherein the amplifying transistor and the cutoff transistor form a negative feedback amplifying circuit. With this configuration, kTC noise can significantly be reduced.

Abstract: The present invention provides a solid-state imaging apparatus that can significantly reduce kTC noise by using a negative feedback amplifying circuit. A solid-state imaging apparatus includes a pixel unit including a plurality of pixels arranged on a semiconductor substrate in a matrix, the pixel unit including, for each column, a source line and a column signal line, each of the plurality of pixels including: a photoelectric conversion unit that generates a signal charge corresponding to incident light; a storage unit storing the signal charge; a reset transistor; an amplifying transistor; and a cutoff transistor, wherein the amplifying transistor and the cutoff transistor form a negative feedback amplifying circuit. With this configuration, kTC noise can significantly be reduced.

Abstract: Provided is a Bi-based piezoelectric material having good piezoelectric properties. The piezoelectric material includes a perovskite-type metal oxide represented by the following general formula (1): Ax(ZnjTi(1-j))l(MgkTi(1-k))mMnO3??General formula (1) where: A represents a Bi element, or one or more kinds of elements selected from the group consisting of trivalent metal elements and containing at least a Bi element; M represents at least one kind of an element selected from the group consisting of Fe, Al, Sc, Mn, Y, Ga, and Yb; and 0.9?x?1.25, 0.4?j?0.6, 0.4?k?0.6, 0.09?l?0.49, 0.19?m?0.64, 0.13?n?0.48, and l+m+n=1 are satisfied.

Abstract: Provided is a piezoelectric material having a high Curie temperature and satisfactory piezoelectric characteristics, the piezoelectric material being represented by the following general formula (1): A(ZnxTi(1-x))yM(1-y)O3??(1) where A represents a Bi element, M represents at least one element selected from Fe, Al, Sc, Mn, Y, Ga, and Yb; x represents a numerical value of 0.4?x?0.6; and y represents a numerical value of 0.17?y?0.60.

Abstract: The solid-state imaging device according to the present invention includes a semiconductor substrate including an imaging region and a peripheral circuit region, a wiring layer formed on the semiconductor substrate, a plurality of pixel electrodes arranged in a matrix on the wiring layer above the imaging region, a photoelectric conversion film formed on the wiring layer and the plurality of pixel electrodes above the imaging region, and an upper electrode formed on the photoelectric conversion film. The photoelectric conversion film has a laminated structure in which a plurality of well layers and a plurality of barrier layers are alternately laminated, the well layers made of a first semiconductor having a fundamental absorption edge in a wavelength region longer than a near-infrared light wavelength, and the barrier layers made of an insulator or a second semiconductor having a band gap wider than that of the first semiconductor.

Abstract: Provided is a Bi-based piezoelectric material having good piezoelectric properties. The piezoelectric material includes a perovskite-type metal oxide represented by the following general formula (1): Ax(ZnjTi(1-j))l(MgkTi(1-k))mMnO3??General formula (1) where: A represents a Bi element, or one or more kinds of elements selected from the group consisting of trivalent metal elements and containing at least a Bi element; M represents at least one kind of an element selected from the group consisting of Fe, Al, Sc, Mn, Y, Ga, and Yb; and 0.9?x?1.25, 0.4?j?0.6, 0.4?k?0.6, 0.09?l?0.49, 0.19?m?0.64, 0.13?n?0.48, and l+m+n=1 are satisfied.

Abstract: Provided is a piezoelectric material having a high Curie temperature and satisfactory piezoelectric characteristics, the piezoelectric material being represented by the following general formula (1): A(ZnxTi(1-x))yM(1-y)O3??(1) where A represents a Bi element, M represents at least one element selected from Fe, Al, Sc, Mn, Y, Ga, and Yb; x represents a numerical value of 0.4?x?0.6; and y represents a numerical value of 0.17?y?0.60.