Patents by Inventor Keisuki Washio

Keisuki Washio has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method and apparatus for growing plasma atomic layer
    Patent number: 8440268
    Abstract: Oxygen gas, for example, is introduced into a film forming chamber, and high-frequency power is supplied to a plurality of monopole antennas arranged above a silicon substrate (101) in the film forming chamber to generate a plasma of the introduced oxygen gas, thereby supplying atomic oxygen (123) onto the surface of an aminosilane molecular layer (102). This plasma generation is performed for about 1 sec. With this operation, the adsorption layer (102) adsorbed onto the surface of the silicon substrate (101) is oxidized, thereby forming a silicon oxide layer (112) corresponding to one atomic layer of silicon on the surface of the silicon substrate (101).
    Type: Grant
    Filed: March 28, 2007
    Date of Patent: May 14, 2013
    Assignee: Mitsui Engineering & Shipbuilding Co., Ltd.
    Inventors: Keisuki Washio, Kazutoshi Murata, Naomasa Miyatake, Hiroyuki Tachibana, Nozomu Hattori
  • METHOD AND APPARATUS FOR GROWING PLASMA ATOMIC LAYER
    Publication number: 20090291232
    Abstract: Oxygen gas, for example, is introduced into a film forming chamber, and high-frequency power is supplied to a plurality of monopole antennas arranged above a silicon substrate (101) in the film forming chamber to generate a plasma of the introduced oxygen gas, thereby supplying atomic oxygen (123) onto the surface of an aminosilane molecular layer (102). This plasma generation is performed for about 1 sec. With this operation, the adsorption layer (102) adsorbed onto the surface of the silicon substrate (101) is oxidized, thereby forming a silicon oxide layer (112) corresponding to one atomic layer of silicon on the surface of the silicon substrate (101).
    Type: Application
    Filed: March 28, 2007
    Publication date: November 26, 2009
    Applicant: MITSUI ENGINEERING & SHIPBUILDING CO., LTD.
    Inventors: Keisuki Washio, Kazutoshi Murata, Naomasa Miyatake, Hiroyuki Tachibana, Nozomu Hattori