Patents by Inventor Keita Akiyama

Keita Akiyama has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240003253
    Abstract: A mining riser pipe is extended toward a water bottom, and a lower portion of an insertion pipe connected to a lower portion of the mining riser pipe is inserted into the water bottom. A liquid is supplied into the insertion pipe, and a rotation shaft extends inside both pipes and stirring blades attached to a lower portion of the rotation shaft are rotated inside the insertion pipe, thereby drilling and dissolving mud inside the insertion pipe into a slurry. Then, the mud S is raised to an upper portion of the insertion pipe by a stirring flow generated by the stirring blades, and the raised mud slurry is lifted above the water through the mining riser pipe 2, and a rotation speed of the stirring blades is lower in an initial process at an early stage of the drilling than in a subsequent process.
    Type: Application
    Filed: February 8, 2022
    Publication date: January 4, 2024
    Inventors: Tomohiro MORISAWA, Shinya OMORI, Yosuke TANAKA, Eigo MIYAZAKI, Keita AKIYAMA, Masanori KYO, Ikuo SAWADA, Yoshihisa KAWAMURA
  • Publication number: 20230112110
    Abstract: A method for recovering rare-earth mud including steps of: (A) penetrating a mud gathering pipe into a layer containing rare-earth mud under the seafloor, (B) preparing a slurry containing a rare earth by loosening rare-earth mud in the mud gathering pipe, and (C) transferring the slurry through a mud raising pipe. A rare-earth mud recovery system including: a mud gathering pipe configured to penetrate into a layer containing rare-earth mud under a seafloor; a stirring device configured to loosen rare-earth mud in the mud gathering pipe; and a mud raising pipe connected to the mud gathering pipe.
    Type: Application
    Filed: February 26, 2021
    Publication date: April 13, 2023
    Applicant: Japan Agency for Marine-Earth Science and Technology
    Inventors: Eigou MIYAZAKI, Yoshihisa KAWAMURA, Ikuo SAWADA, Masanori KYO, Mikito FURUICHI, Keita AKIYAMA, Yasuhiro NAMBA
  • Publication number: 20220236556
    Abstract: A light deflector includes a mirror part, a pair of torsion bars, inside piezoelectric actuators, and a movable frame part. The crystal orientation in the axial direction of the torsion bars is set to <100>. In the joint edge portions of the torsion bars and the inside piezoelectric actuators, radius parts are oriented to <110> and each formed by a curved surface recessed inward. The amount of waviness about a roughness curve derived from the curved surface is set within 600 nm.
    Type: Application
    Filed: May 20, 2020
    Publication date: July 28, 2022
    Applicant: STANLEY ELECTRIC CO., LTD.
    Inventor: Keita AKIYAMA
  • Patent number: 10767446
    Abstract: A concave section such as an extension section, a cutting section, and a notch section is provided to receive a lid of a float valve in an inside of outer tube assembly of a drill string. Thus, when the float valve is provided for the drill string, it is made possible to collect a core with a larger diameter by a thinner drill string, by expanding the inner diameter of the drill string.
    Type: Grant
    Filed: July 21, 2016
    Date of Patent: September 8, 2020
    Assignees: JAPAN AGENCY FOR MARINE-EARTH SCIENCE AND TECHNOLOGY, NLC CO., LTD.
    Inventors: Yuichi Shimmoto, Eigou Miyazaki, Keita Akiyama, Masaki Kawahara, Tomoaki Suzuki
  • Publication number: 20180209245
    Abstract: A concave section such as an extension section, a cutting section, and a notch section is provided to receive a lid of a float valve in an inside of outer tube assembly of a drill string. Thus, when the float valve is provided for the drill string, it is made possible to collect a core with a larger diameter by a thinner drill string, by expanding the inner diameter of the drill string.
    Type: Application
    Filed: July 21, 2016
    Publication date: July 26, 2018
    Applicants: JAPAN AGENCY FOR MARINE-EARTH SCIENCE AND TECHNOLOGY, NLC CO., LTD.
    Inventors: Yuichi SHIMMOTO, Eigou MIYAZAKI, Keita AKIYAMA, Masaki KAWAHARA, Tomoaki SUZUKI
  • Patent number: 8610151
    Abstract: There is provided a light-emitting element having a semiconductor film which includes a p-type current-spreading layer of GaInP or GaP; a first p-clad of AlInP; a second p-clad of AlGaInP; an active layer including of GaInP or AlGaInP; a first n-clad having a carrier density of 1×1018 cm?3 to 5×1018 cm?3; a second n-clad having a carrier density of 1×1018 cm?3 to 5×1018 cm?3; wherein the thickness proportion of the first p-clad in an entire p-clad, is 50% to 80%; the thickness of an entire n-clad is equal to or greater than 2 ?m; the thickness proportion of the first n-clad in the entire n-clad is equal to or greater than 80%; and the thickness of the second n-clad is equal to or greater than 100 nm.
    Type: Grant
    Filed: March 8, 2012
    Date of Patent: December 17, 2013
    Assignee: Stanley Electric Co., Ltd.
    Inventors: Chiharu Sasaki, Wataru Tamura, Keita Akiyama
  • Patent number: 8507943
    Abstract: A semiconductor light-emitting element with a counter electrode structure can include a first electrode including at least one linear first electrode piece that is disposed on a surface of a first semiconductor layer close to the support substrate and in ohmic contact with the first semiconductor layer, a second electrode including at least one linear second electrode piece that is disposed on a surface of a second semiconductor layer and in ohmic contact with the second semiconductor layer. A plurality of conical projections can be formed on the second semiconductor layer. The first electrode piece and the second electrode piece can be disposed soas not to overlap with each other in a stacked direction of the semiconductor light-emitting stacked body but to be parallel with each other when viewed from above.
    Type: Grant
    Filed: March 26, 2012
    Date of Patent: August 13, 2013
    Assignee: Stanley Electric Co., Ltd.
    Inventors: Keita Akiyama, Takuya Kazama
  • Patent number: 8367449
    Abstract: A semiconductor light-emitting apparatus that has high luminous efficiency and a high breakdown voltage as well as reduced breakdown voltage variation among lots. The semiconductor light-emitting apparatus includes a first clad layer and a second clad layer. An average dopant concentration of the second clad layer is lower than that of the first clad layer. The light-emitting apparatus also includes an active layer having an average dopant concentration of 2×1016 to 4×1016 cm?3. The active layer is made of (AlyGa1-y)xIn1-xP (0<x?1, 0?y?1). The light-emitting apparatus also includes a third clad layer, and a second-conducting-type semiconductor layer made of Ga1-xInxP (0?x<1). If d is the layer thickness of the second clad layer (nm) and Nd1 is the average dopant concentration of the second clad layer (cm?3), then d?1.2×Nd1×10?15+150 is satisfied.
    Type: Grant
    Filed: February 14, 2011
    Date of Patent: February 5, 2013
    Assignee: Stanley Electric Co., Ltd.
    Inventors: Chiharu Sasaki, Wataru Tamura, Keita Akiyama
  • Publication number: 20120241808
    Abstract: A semiconductor light-emitting element with a counter electrode structure can include a first electrode including at least one linear first electrode piece that is disposed on a surface of a first semiconductor layer close to the support substrate and in ohmic contact with the first semiconductor layer, a second electrode including at least one linear second electrode piece that is disposed on a surface of a second semiconductor layer and in ohmic contact with the second semiconductor layer. A plurality of conical projections can be formed on the second semiconductor layer. The first electrode piece and the second electrode piece can be disposed so as not to overlap with each other in a stacked direction of the semiconductor light-emitting stacked body but to be parallel with each other when viewed from above.
    Type: Application
    Filed: March 26, 2012
    Publication date: September 27, 2012
    Inventors: Keita Akiyama, Takuya Kazama
  • Publication number: 20120228658
    Abstract: There is provided a light-emitting element having a semiconductor film which includes a p-type current-spreading layer of GaInP or GaP; a first p-clad of AlInP; a second p-clad of AlGaInP; an active layer including of GaInP or AlGaInP; a first n-clad having a carrier density of 1×1018 cm?3 to 5×1018 cm?3; a second n-clad having a carrier density of 1×1018 cm?3 to 5×1018 cm?3; wherein the thickness proportion of the first p-clad in an entire p-clad, is 50% to 80%; the thickness of an entire n-clad is equal to or greater than 2 ?m; the thickness proportion of the first n-clad in the entire n-clad is equal to or greater than 80%; and the thickness of the second n-clad is equal to or greater than 100 nm.
    Type: Application
    Filed: March 8, 2012
    Publication date: September 13, 2012
    Applicant: STANLEY ELECTRIC CO., LTD.
    Inventors: Chiharu SASAKI, Wataru TAMURA, Keita AKIYAMA
  • Publication number: 20110198634
    Abstract: A semiconductor light-emitting apparatus that has high luminous efficiency and a high breakdown voltage as well as reduced breakdown voltage variation among lots. The semiconductor light-emitting apparatus includes a first clad layer and a second clad layer. An average dopant concentration of the second clad layer is lower than that of the first clad layer. The light-emitting apparatus also includes an active layer having an average dopant concentration of 2×1016 to 4×1016 cm?3. The active layer is made of (AlyGa1-y)xIn1-xP (0<x?1, 0?y?1). The light-emitting apparatus also includes a third clad layer, and a second-conducting-type semiconductor layer made of Ga1-xInxP (0?x<1). If d is the layer thickness of the second clad layer (nm) and Nd1 is the average dopant concentration of the second clad layer (cm?3), then d?1.2×Nd1×10?15+150 is satisfied.
    Type: Application
    Filed: February 14, 2011
    Publication date: August 18, 2011
    Applicant: STANLEY ELECTRIC CO., LTD.
    Inventors: Chiharu SASAKI, Wataru Tamura, Keita Akiyama
  • Patent number: D727085
    Type: Grant
    Filed: November 12, 2013
    Date of Patent: April 21, 2015
    Assignee: Zojirushi Corporation
    Inventors: Keito Kotani, Keita Akiyama
  • Patent number: D765460
    Type: Grant
    Filed: May 7, 2015
    Date of Patent: September 6, 2016
    Assignee: Zojirushi Corporation
    Inventor: Keita Akiyama
  • Patent number: D799963
    Type: Grant
    Filed: May 17, 2016
    Date of Patent: October 17, 2017
    Assignee: ZOJIRUSHI CORPORATION
    Inventor: Keita Akiyama