Abstract: A mining riser pipe is extended from above water toward a water bottom containing water bottom resources, and a lower portion of an insertion pipe connected to a lower portion of the mining riser pipe is inserted into the water bottom. A liquid is supplied into the insertion pipe and a rotation shaft extends axially inside both of pipes is rotated to rotate stirring blades attached to a lower portion of the rotation shaft inside the insertion pipe, thereby drilling and dissolving mud S inside the insertion pipe into a slurry form is raised to an upper portion of the insertion pipe by a stirring flow generated by the rotation of the stirring blades, and the raised mud is lifted above the water through the mining riser pipe by lifting force.

Abstract: A mining riser pipe is extended toward a water bottom, and a lower portion of an insertion pipe connected to a lower portion of the mining riser pipe is inserted into the water bottom. A liquid is supplied into the insertion pipe, and a rotation shaft extends inside both pipes and stirring blades attached to a lower portion of the rotation shaft are rotated inside the insertion pipe, thereby drilling and dissolving mud inside the insertion pipe into a slurry. Then, the mud S is raised to an upper portion of the insertion pipe by a stirring flow generated by the stirring blades, and the raised mud slurry is lifted above the water through the mining riser pipe 2, and a rotation speed of the stirring blades is lower in an initial process at an early stage of the drilling than in a subsequent process.

Abstract: A method for recovering rare-earth mud including steps of: (A) penetrating a mud gathering pipe into a layer containing rare-earth mud under the seafloor, (B) preparing a slurry containing a rare earth by loosening rare-earth mud in the mud gathering pipe, and (C) transferring the slurry through a mud raising pipe. A rare-earth mud recovery system including: a mud gathering pipe configured to penetrate into a layer containing rare-earth mud under a seafloor; a stirring device configured to loosen rare-earth mud in the mud gathering pipe; and a mud raising pipe connected to the mud gathering pipe.

Abstract: A light deflector includes a mirror part, a pair of torsion bars, inside piezoelectric actuators, and a movable frame part. The crystal orientation in the axial direction of the torsion bars is set to <100>. In the joint edge portions of the torsion bars and the inside piezoelectric actuators, radius parts are oriented to <110> and each formed by a curved surface recessed inward. The amount of waviness about a roughness curve derived from the curved surface is set within 600 nm.

Abstract: A concave section such as an extension section, a cutting section, and a notch section is provided to receive a lid of a float valve in an inside of outer tube assembly of a drill string. Thus, when the float valve is provided for the drill string, it is made possible to collect a core with a larger diameter by a thinner drill string, by expanding the inner diameter of the drill string.

Abstract: A concave section such as an extension section, a cutting section, and a notch section is provided to receive a lid of a float valve in an inside of outer tube assembly of a drill string. Thus, when the float valve is provided for the drill string, it is made possible to collect a core with a larger diameter by a thinner drill string, by expanding the inner diameter of the drill string.

Abstract: There is provided a light-emitting element having a semiconductor film which includes a p-type current-spreading layer of GaInP or GaP; a first p-clad of AlInP; a second p-clad of AlGaInP; an active layer including of GaInP or AlGaInP; a first n-clad having a carrier density of 1×1018 cm?3 to 5×1018 cm?3; a second n-clad having a carrier density of 1×1018 cm?3 to 5×1018 cm?3; wherein the thickness proportion of the first p-clad in an entire p-clad, is 50% to 80%; the thickness of an entire n-clad is equal to or greater than 2 ?m; the thickness proportion of the first n-clad in the entire n-clad is equal to or greater than 80%; and the thickness of the second n-clad is equal to or greater than 100 nm.

Abstract: A semiconductor light-emitting element with a counter electrode structure can include a first electrode including at least one linear first electrode piece that is disposed on a surface of a first semiconductor layer close to the support substrate and in ohmic contact with the first semiconductor layer, a second electrode including at least one linear second electrode piece that is disposed on a surface of a second semiconductor layer and in ohmic contact with the second semiconductor layer. A plurality of conical projections can be formed on the second semiconductor layer. The first electrode piece and the second electrode piece can be disposed soas not to overlap with each other in a stacked direction of the semiconductor light-emitting stacked body but to be parallel with each other when viewed from above.

Abstract: A semiconductor light-emitting apparatus that has high luminous efficiency and a high breakdown voltage as well as reduced breakdown voltage variation among lots. The semiconductor light-emitting apparatus includes a first clad layer and a second clad layer. An average dopant concentration of the second clad layer is lower than that of the first clad layer. The light-emitting apparatus also includes an active layer having an average dopant concentration of 2×1016 to 4×1016 cm?3. The active layer is made of (AlyGa1-y)xIn1-xP (0<x?1, 0?y?1). The light-emitting apparatus also includes a third clad layer, and a second-conducting-type semiconductor layer made of Ga1-xInxP (0?x<1). If d is the layer thickness of the second clad layer (nm) and Nd1 is the average dopant concentration of the second clad layer (cm?3), then d?1.2×Nd1×10?15+150 is satisfied.

Abstract: A semiconductor light-emitting element with a counter electrode structure can include a first electrode including at least one linear first electrode piece that is disposed on a surface of a first semiconductor layer close to the support substrate and in ohmic contact with the first semiconductor layer, a second electrode including at least one linear second electrode piece that is disposed on a surface of a second semiconductor layer and in ohmic contact with the second semiconductor layer. A plurality of conical projections can be formed on the second semiconductor layer. The first electrode piece and the second electrode piece can be disposed so as not to overlap with each other in a stacked direction of the semiconductor light-emitting stacked body but to be parallel with each other when viewed from above.

Abstract: There is provided a light-emitting element having a semiconductor film which includes a p-type current-spreading layer of GaInP or GaP; a first p-clad of AlInP; a second p-clad of AlGaInP; an active layer including of GaInP or AlGaInP; a first n-clad having a carrier density of 1×1018 cm?3 to 5×1018 cm?3; a second n-clad having a carrier density of 1×1018 cm?3 to 5×1018 cm?3; wherein the thickness proportion of the first p-clad in an entire p-clad, is 50% to 80%; the thickness of an entire n-clad is equal to or greater than 2 ?m; the thickness proportion of the first n-clad in the entire n-clad is equal to or greater than 80%; and the thickness of the second n-clad is equal to or greater than 100 nm.

Abstract: A semiconductor light-emitting apparatus that has high luminous efficiency and a high breakdown voltage as well as reduced breakdown voltage variation among lots. The semiconductor light-emitting apparatus includes a first clad layer and a second clad layer. An average dopant concentration of the second clad layer is lower than that of the first clad layer. The light-emitting apparatus also includes an active layer having an average dopant concentration of 2×1016 to 4×1016 cm?3. The active layer is made of (AlyGa1-y)xIn1-xP (0<x?1, 0?y?1). The light-emitting apparatus also includes a third clad layer, and a second-conducting-type semiconductor layer made of Ga1-xInxP (0?x<1). If d is the layer thickness of the second clad layer (nm) and Nd1 is the average dopant concentration of the second clad layer (cm?3), then d?1.2×Nd1×10?15+150 is satisfied.