Abstract: An exposure system includes an exposure tool configured to project grating patterns oriented in different directions onto test areas by a linearly polarized light, respectively, each of the grating patterns having a space width preventing higher order diffracted lights from an image formation, a data collector configured to collect sets of test optical intensity data on the test areas, and a polarization direction monitor configured to monitor a polarization direction of the linearly polarized light by comparing the sets of the test optical intensity data.

Abstract: An apparatus for correcting a plurality of exposure tools has an image memory configured to store images projected by the exposure tools, a contrast evaluator configured to rank the exposure tools based on contrasts of the images, an evenness evaluator configured to determine whether optical proximity effects of the exposure tools are equivalent or not based on the images, and an exposure tool controller configured to adjust each contrast of the images projected by the exposure tools so that all optical proximity effects of the exposure tools is equivalent to an optical proximity effect of the lowest ranked exposure tool having the lowest contrast.

Abstract: An exposure system includes an exposure tool configured to project grating patterns oriented in different directions onto test areas by a linearly polarized light, respectively, each of the grating patterns having a space width preventing higher order diffracted lights from an image formation, a data collector configured to collect sets of test optical intensity data on the test areas, and a polarization direction monitor configured to monitor a polarization direction of the linearly polarized light by comparing the sets of the test optical intensity data.

Abstract: An apparatus for correcting a plurality of exposure tools has an image memory configured to store images projected by the exposure tools, a contrast evaluator configured to rank the exposure tools based on contrasts of the images, an evenness evaluator configured to determine whether optical proximity effects of the exposure tools are equivalent or not based on the images, and an exposure tool controller configured to adjust each contrast of the images projected by the exposure tools so that all optical proximity effects of the exposure tools is equivalent to an optical proximity effect of the lowest ranked exposure tool having the lowest contrast.

Abstract: Disclosed is an exposure method comprising preparing an exposure apparatus including an illumination system and a projection lens, setting, in the exposure apparatus, a photomask having a mask pattern including a plurality of unit circuit patterns arranged like a checkered flag pattern and a plurality of unit auxiliary patterns arranged between the unit circuit patterns, and projecting the mask pattern onto a substrate through the projection lens by irradiating the photomask with light from the illumination system, wherein the unit circuit patterns and the unit auxiliary patterns generate a plurality of diffraction light spots on a pupil plane of the projection lens, and the four diffraction light spots having higher light intensities than the remaining diffraction light spots are distributed on the pupil plane in a cycle of 90°.

Abstract: Lens distortion correction is characterized by obtaining a correction parameter by using the difference between the latest QC data used when exposing a overlaying layer and the latest QC data used when exposing a overlaid layer.

Abstract: Lens distortion correction is characterized by obtaining a correction parameter by using the difference between the latest QC data used when exposing a overlaying layer and the latest QC data used when exposing a overlaid layer.

Abstract: Disclosed is an exposure method comprising preparing an exposure apparatus including an illumination system and a projection lens, setting, in the exposure apparatus, a photomask having a mask pattern including a plurality of unit circuit patterns arranged like a checkered flag pattern and a plurality of unit auxiliary patterns arranged between the unit circuit patterns, and projecting the mask pattern onto a substrate through the projection lens by irradiating the photomask with light from the illumination system, wherein the unit circuit patterns and the unit auxiliary patterns generate a plurality of diffraction light spots on a pupil plane of the projection lens, and the four diffraction light spots having higher light intensities than the remaining diffraction light spots are distributed on the pupil plane in a cycle of 90°.

Abstract: The invention allows for measurement at the same density as an actual device pattern and measures the level of registration of actual patterns with precision. In the measurement of the invention, a first exposure process is performed on a first-level pattern and a second exposure process is then performed on a second-level pattern. After that, the patterns are developed and etched, thereby forming two patterns of different shapes. Next, the resistance between terminals of a pattern which are obtained by means of etching is measured through a four-point measurement. An amount of misregistration of the first-level pattern and the second-level pattern is calculated from the measured resistance.

Abstract: A light exposure tool of the present invention is so structured as to enable the correction of a linear intrafield error of a shot and of a higher-order intrafield error of the shot depending upon an interfield of a wafer. The light exposure tool comprises a reticle having a written circuit pattern, a reticle stage having the reticle placed on it, a reticle XY stage drive controller, a reticle stage position measuring mechanism, a wafer stage having a semiconductor wafer placed on it, the semiconductor wafer having a plurality of alignment marks formed on it for position identification, a wafer XY stage drive controller, a wafer stage position measuring mechanism, a projection optical mechanism for projecting the circuit pattern of the reticle onto the wafer to create a shot, an alignment mechanism for detecting positions of the alignment marks 9 and setting the reticle and wafer in a desired position, a calculation device, a shot rotation adjusting controller, and an isotropic magnification controller.