Abstract: Provided are: a porous polyether sulfone film having macrovoids and having excellent dimensional stability; and a production method therefor. Provided is a porous polyether sulfone film having a surface layer (a), a surface layer (b), and a macrovoid layer interposed between the surface layer (a) and the surface layer (b). The macrovoid layer has a partition wall joined to the surface layers (a) and (b) and a plurality of macrovoids surrounded by the partition wall and the surface layers (a) and (b). The surface layer (a) and the surface layer (b) have pores connected to the macrovoids.

Abstract: The present invention pertains to a porous polyimide film production method and a porous polyimide film produced using said method, said method including: a step (1) in which a poly(amic acid) solution comprising 40%-97% by mass organic polar solvent and 3%-60% by mass poly(amic acid) having an intrinsic viscosity, comprising tetracarboxylic acid units and diamine units, of 1.0-3.0 is cast in film form and immersed in or caused to come in contact with a coagulating solvent having water as an essential component thereof, and a porous film of poly(amic acid) is produced; and a step (2) in which the porous film of poly(amic acid) obtained in said step is heat treated and imidized. Shrinkage in the film longitudinal direction and transverse direction after heat treatment is suppressed to no more than 8% for each direction and the speed of temperature increase in a temperature range of at least 200° C. during the heat treatment is at least 25° C./min.

Abstract: Provided are: a porous polyether sulfone film having macrovoids and having excellent dimensional stability; and a production method therefor. Provided is a porous polyether sulfone film having a surface layer (a), a surface layer (b), and a macrovoid layer interposed between the surface layer (a) and the surface layer (b). The macrovoid layer has a partition wall joined to the surface layers (a) and (b) and a plurality of macrovoids surrounded by the partition wall and the surface layers (a) and (b). The surface layer (a) and the surface layer (b) have pores connected to the macrovoids.

Abstract: The present invention pertains to a porous polyimide film production method and a porous polyimide film produced using said method, said method including: a step (1) in which a poly(amic acid) solution comprising 40%-97% by mass organic polar solvent and 3%-60% by mass poly(amic acid) having an intrinsic viscosity, comprising tetracarboxylic acid units and diamine units, of 1.0-3.0 is cast in film form and immersed in or caused to come in contact with a coagulating solvent having water as an essential component thereof, and a porous film of poly(amic acid) is produced; and a step (2) in which the porous film of poly(amic acid) obtained in said step is heat treated and imidized. Shrinkage in the film longitudinal direction and transverse direction after heat treatment is suppressed to no more than 8% for each direction and the speed of temperature increase in a temperature range of at least 200° C. during the heat treatment is at least 25° C./min.

Abstract: A method for forming a conductor layer, including subjecting a surface of a polyimide film where a polyimide layer (a) is formed to polyimide etching treatment, to remove at least part of the polyimide layer (a), the polyimide film having the polyimide layer (a) formed on one surface or both surfaces of a polyimide layer (b); and then forming a conductor layer on the surface, such that the polyimide etching treatment time T (min), which is represented using t (min) defined by the formula as described below, is within the range of 0.2t?T?5t.

Abstract: A method for forming a conductor layer, including subjecting a surface of a polyimide film where a polyimide layer (a) is formed to polyimide etching treatment, to remove at least part of the polyimide layer (a), the polyimide film having the polyimide layer (a) formed on one surface or both surfaces of a polyimide layer (b); and then forming a conductor layer on the surface, such that the polyimide etching treatment time T (min), which is represented using t (min) defined by the formula as described below, is within the range of 0.2t?T?5t.

Abstract: Disclosed is a method for producing a printed wiring board having high dimensional stability with high productivity. The production method comprising the steps of: providing a metal laminate in which a metal layer having an inner metal layer portion and a protection layer portion is laminated on at least one side of an insulating resin layer in such a manner that the inner metal layer portion is arranged on the side of the insulating resin layer; forming a via hole on the metal layer and the insulating resin layer; performing blast processing after forming the via hole; and removing the protection layer portion after performing blast processing.

Abstract: Is disclosed a process for producing a metal wiring substrate comprising a heat resistant resin substrate and a metal wiring which is laminated on the substrate and in which a surface laminated with the substrate is surface-treated with at least one metal selected from Ni, Cr, Co, Zn, Sn and Mo or an alloy comprising at least one of these metals (hereafter, the metal used for the surface-treatment is referred to as a surface-treatment metal). This process comprises the steps of forming the metal wiring on the resin substrate, and washing at least a surface of the resin substrate with an etching solution capable of removing the surface-treatment metal to increase adhesion of the surface of the resin substrate. The produced metal wiring substrate has excellent adhesion with adhesives for affixing anisotropic conductive films and IC chips to films.

Abstract: Is disclosed a process for producing a copper-wiring polyimide film from a carrier-accompanied copper foil laminated polyimide film by a subtractive method or a semi-additive method. Washing the polyimide surface exposed by etching the copper foil with a etching solution capable of removing mainly at least one metal selected from Ni, Cr, Co, Zn, Sn and Mo or an alloy comprising at least one of these metals used for a surface treatment of the copper foil restrains an anomalous deposition of plating substances when the copper wiring is plated with tin.

Abstract: There is disclosed a copper wiring polyimide film having wiring with ultra fine pitch and excellent in the linearity. The copper wiring polyimide film is produced by a process for producing a copper wiring polyimide film having a 20 to 45 ?m-pitch copper wiring part by a semi-additive method using a copper foil laminated polyimide film with carrier. The process comprises (a) a step of providing a copper foil laminated film comprising a copper foil having a film side surface roughness Rz of not more than 1.0 ?m and a thickness in the range of 0.5 to 2 ?m laminated on a surface of a polyimide film, (b) a step of forming a plating resist pattern layer in which a wiring pattern having 20 to 45 ?m pitch can be formed on the upper surface of the copper foil, (c) a step of conducting copper plating on the copper foil part exposed from the resist, (d) a step of removing the plating resist, and (e) a step of removing the copper foil exposed on the plating resist-removed part to expose a polyimide film.