Patents by Inventor Keita HATASA

Keita HATASA has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11164841
    Abstract: A semiconductor device may be provided with a first member, a second member joined to a first region of the first member via a first solder layer and a third member joined to a second region of the first member via a second solder layer. The first region and the second region are located on one side of the first member. The first solder layer contains a plurality of support particles that is constituted of a material having a higher melting point than the first solder layer. The second solder layer does not contain any support particles.
    Type: Grant
    Filed: November 4, 2019
    Date of Patent: November 2, 2021
    Assignee: DENSO CORPORATION
    Inventors: Shingo Iwasaki, Keita Hatasa, Satoshi Takahagi
  • Patent number: 10847448
    Abstract: A semiconductor device includes a semiconductor element, a first conductor bonded to an upper surface of the semiconductor element via a first solder layer, and a second conductor bonded to an upper surface of the first conductor via a second solder layer. The first conductor includes at least one groove formed in a stacking direction of the semiconductor element, the first conductor, and the second conductor on a side surface adjacent to the upper surface of the first conductor.
    Type: Grant
    Filed: January 15, 2019
    Date of Patent: November 24, 2020
    Assignee: DENSO CORPORATION
    Inventors: Keita Hatasa, Hiroyuki Takeda, Satoshi Takahagi
  • Publication number: 20200185348
    Abstract: A semiconductor device may be provided with a first member, a second member joined to a first region of the first member via a first solder layer and a third member joined to a second region of the first member via a second solder layer. The first region and the second region are located on one side of the first member. The first solder layer contains a plurality of support particles that is constituted of a material having a higher melting point than the first solder layer. The second solder layer does not contain any support particles.
    Type: Application
    Filed: November 4, 2019
    Publication date: June 11, 2020
    Applicant: DENSO CORPORATION
    Inventors: Shingo Iwasaki, Keita Hatasa, Satoshi Takahagi
  • Publication number: 20190229040
    Abstract: A semiconductor device includes a semiconductor element, a first conductor bonded to an upper surface of the semiconductor element via a first solder layer, and a second conductor bonded to an upper surface of the first conductor via a second solder layer. The first conductor includes at least one groove formed in a stacking direction of the semiconductor element, the first conductor, and the second conductor on a side surface adjacent to the upper surface of the first conductor.
    Type: Application
    Filed: January 15, 2019
    Publication date: July 25, 2019
    Applicant: TOYOTA JIDOSHA KABUSHIKI KAISHA
    Inventors: Keita HATASA, Hiroyuki TAKEDA, Satoshi TAKAHAGI
  • Patent number: 10157815
    Abstract: A semiconductor device includes: a sealing body that seals a first semiconductor element and a second semiconductor element; first heat-radiating members exposed at a front surface of the sealing body; second heat-radiating members exposed at a back surface of the sealing body; first signal terminals electrically connected to the first semiconductor element, and projecting from a top surface of the sealing body in a first direction; and second signal terminals electrically connected to the second semiconductor elements, and projecting from the top surface of the sealing body in the first direction. The top surface of the sealing body includes a first inclined surface, a second inclined surface, and a boundary line or a boundary range located therebetween. The boundary line or the boundary range includes at least part of a minimum creepage path between the first signal terminals and the second signal terminals.
    Type: Grant
    Filed: December 2, 2016
    Date of Patent: December 18, 2018
    Assignee: Toyota Jidosha Kabushiki Kaisha
    Inventors: Keita Hatasa, Makoto Imai, Tomomi Okumura
  • Publication number: 20180174998
    Abstract: Method for manufacturing a semiconductor device includes: preparing a first subassembly in which an upper surface of the conductive spacer is soldered on the second conductive member and preliminary solder is provided on a lower surface of the conductive spacer; preparing a second subassembly in which the lower surface of the semiconductor element is soldered on the first conductive member and the bonding wire is joined on upper surface of the semiconductor element; and soldering the upper surface of the semiconductor element in the second subassembly on the lower surface of the conducive spacer in the first subassembly by melting the preliminary solder in the first subassembly
    Type: Application
    Filed: November 3, 2017
    Publication date: June 21, 2018
    Applicant: TOYOTA JIDOSHA KABUSHIKI KAISHA
    Inventors: Kaisei SATO, Keita HATASA, Tomomi OKUMURA
  • Patent number: 9966682
    Abstract: A female connection terminal includes a first female terminal having a substantially cylindrical shape with openings at one end and another end, a second female terminal having a substantially cylindrical shape with openings at one end and another end, and a coupling spring coupling together the first female terminal and the second female terminal at the other end of the first female terminal and the other end of the second female terminal. The coupling spring connects the first female terminal and the second female terminal to each other without, when viewed from an upper side, overlapping at least one of the openings of the first female terminal on the other end side and at least one of the openings of the second female terminal on the other end side.
    Type: Grant
    Filed: November 22, 2016
    Date of Patent: May 8, 2018
    Assignee: TOYOTA JIDOSHA KABUSHIKI KAISHA
    Inventors: Keita Hatasa, Makoto Imai
  • Publication number: 20170162462
    Abstract: A semiconductor device includes: a sealing body that seals a first semiconductor element and a second semiconductor element; first heat-radiating members exposed at a front surface of the sealing body; second heat-radiating members exposed at a back surface of the sealing body; first signal terminals electrically connected to the first semiconductor element, and projecting from a top surface of the sealing body in a first direction; and second signal terminals electrically connected to the second semiconductor elements, and projecting from the top surface of the sealing body in the first direction. The top surface of the sealing body includes a first inclined surface, a second inclined surface, and a boundary line or a boundary range located therebetween. The boundary line or the boundary range includes at least part of a minimum creepage path between the first signal terminals and the second signal terminals.
    Type: Application
    Filed: December 2, 2016
    Publication date: June 8, 2017
    Inventors: Keita Hatasa, Makoto Imai, Tomomi Okumura
  • Publication number: 20170162970
    Abstract: A female connection terminal includes a first female terminal having a substantially cylindrical shape with openings at one end and another end, a second female terminal having a substantially cylindrical shape with openings at one end and another end, and a coupling spring coupling together the first female terminal and the second female terminal at the other end of the first female terminal and the other end of the second female terminal. The coupling spring connects the first female terminal and the second female terminal to each other without, when viewed from an upper side, overlapping at least one of the openings of the first female terminal on the other end side and at least one of the openings of the second female terminal on the other end side.
    Type: Application
    Filed: November 22, 2016
    Publication date: June 8, 2017
    Applicant: TOYOTA JIDOSHA KABUSHIKI KAISHA
    Inventors: Keita HATASA, Makoto IMAI
  • Patent number: 9521758
    Abstract: A semiconductor device includes a semiconductor module that has an electrode terminal projecting externally; a substrate that has a through hole or a cut-out for inserting the electrode terminal; and a guide member that is provided between the semiconductor module and the substrate and guides the electrode terminal in such a manner that the electrode terminal is inserted into the through hole or the cut-out. The guide member becomes out of contact with the electrode terminal after the electrode terminal is inserted into the through hole or the cut-out.
    Type: Grant
    Filed: May 19, 2014
    Date of Patent: December 13, 2016
    Assignees: TOYOTA JIDOSHA KABUSHIKI KAISHA, DENSO CORPORATION
    Inventors: Keita Hatasa, Arata Harada, Daisuke Harada
  • Publication number: 20140362540
    Abstract: A semiconductor device includes a semiconductor module that has an electrode terminal projecting externally; a substrate that has a through hole or a cut-out for inserting the electrode terminal; and a guide member that is provided between the semiconductor module and the substrate and guides the electrode terminal in such a manner that the electrode terminal is inserted into the through hole or the cut-out. The guide member becomes out of contact with the electrode terminal after the electrode terminal is inserted into the through hole or the cut-out.
    Type: Application
    Filed: May 19, 2014
    Publication date: December 11, 2014
    Applicants: TOYOTA JIDOSHA KABUSHIKI KAISHA, DENSO CORPORATION
    Inventors: Keita HATASA, Arata HARADA, Daisuke HARADA