Patents by Inventor Keita HATASA
Keita HATASA has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11164841Abstract: A semiconductor device may be provided with a first member, a second member joined to a first region of the first member via a first solder layer and a third member joined to a second region of the first member via a second solder layer. The first region and the second region are located on one side of the first member. The first solder layer contains a plurality of support particles that is constituted of a material having a higher melting point than the first solder layer. The second solder layer does not contain any support particles.Type: GrantFiled: November 4, 2019Date of Patent: November 2, 2021Assignee: DENSO CORPORATIONInventors: Shingo Iwasaki, Keita Hatasa, Satoshi Takahagi
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Patent number: 10847448Abstract: A semiconductor device includes a semiconductor element, a first conductor bonded to an upper surface of the semiconductor element via a first solder layer, and a second conductor bonded to an upper surface of the first conductor via a second solder layer. The first conductor includes at least one groove formed in a stacking direction of the semiconductor element, the first conductor, and the second conductor on a side surface adjacent to the upper surface of the first conductor.Type: GrantFiled: January 15, 2019Date of Patent: November 24, 2020Assignee: DENSO CORPORATIONInventors: Keita Hatasa, Hiroyuki Takeda, Satoshi Takahagi
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Publication number: 20200185348Abstract: A semiconductor device may be provided with a first member, a second member joined to a first region of the first member via a first solder layer and a third member joined to a second region of the first member via a second solder layer. The first region and the second region are located on one side of the first member. The first solder layer contains a plurality of support particles that is constituted of a material having a higher melting point than the first solder layer. The second solder layer does not contain any support particles.Type: ApplicationFiled: November 4, 2019Publication date: June 11, 2020Applicant: DENSO CORPORATIONInventors: Shingo Iwasaki, Keita Hatasa, Satoshi Takahagi
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Publication number: 20190229040Abstract: A semiconductor device includes a semiconductor element, a first conductor bonded to an upper surface of the semiconductor element via a first solder layer, and a second conductor bonded to an upper surface of the first conductor via a second solder layer. The first conductor includes at least one groove formed in a stacking direction of the semiconductor element, the first conductor, and the second conductor on a side surface adjacent to the upper surface of the first conductor.Type: ApplicationFiled: January 15, 2019Publication date: July 25, 2019Applicant: TOYOTA JIDOSHA KABUSHIKI KAISHAInventors: Keita HATASA, Hiroyuki TAKEDA, Satoshi TAKAHAGI
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Patent number: 10157815Abstract: A semiconductor device includes: a sealing body that seals a first semiconductor element and a second semiconductor element; first heat-radiating members exposed at a front surface of the sealing body; second heat-radiating members exposed at a back surface of the sealing body; first signal terminals electrically connected to the first semiconductor element, and projecting from a top surface of the sealing body in a first direction; and second signal terminals electrically connected to the second semiconductor elements, and projecting from the top surface of the sealing body in the first direction. The top surface of the sealing body includes a first inclined surface, a second inclined surface, and a boundary line or a boundary range located therebetween. The boundary line or the boundary range includes at least part of a minimum creepage path between the first signal terminals and the second signal terminals.Type: GrantFiled: December 2, 2016Date of Patent: December 18, 2018Assignee: Toyota Jidosha Kabushiki KaishaInventors: Keita Hatasa, Makoto Imai, Tomomi Okumura
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Publication number: 20180174998Abstract: Method for manufacturing a semiconductor device includes: preparing a first subassembly in which an upper surface of the conductive spacer is soldered on the second conductive member and preliminary solder is provided on a lower surface of the conductive spacer; preparing a second subassembly in which the lower surface of the semiconductor element is soldered on the first conductive member and the bonding wire is joined on upper surface of the semiconductor element; and soldering the upper surface of the semiconductor element in the second subassembly on the lower surface of the conducive spacer in the first subassembly by melting the preliminary solder in the first subassemblyType: ApplicationFiled: November 3, 2017Publication date: June 21, 2018Applicant: TOYOTA JIDOSHA KABUSHIKI KAISHAInventors: Kaisei SATO, Keita HATASA, Tomomi OKUMURA
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Patent number: 9966682Abstract: A female connection terminal includes a first female terminal having a substantially cylindrical shape with openings at one end and another end, a second female terminal having a substantially cylindrical shape with openings at one end and another end, and a coupling spring coupling together the first female terminal and the second female terminal at the other end of the first female terminal and the other end of the second female terminal. The coupling spring connects the first female terminal and the second female terminal to each other without, when viewed from an upper side, overlapping at least one of the openings of the first female terminal on the other end side and at least one of the openings of the second female terminal on the other end side.Type: GrantFiled: November 22, 2016Date of Patent: May 8, 2018Assignee: TOYOTA JIDOSHA KABUSHIKI KAISHAInventors: Keita Hatasa, Makoto Imai
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Publication number: 20170162462Abstract: A semiconductor device includes: a sealing body that seals a first semiconductor element and a second semiconductor element; first heat-radiating members exposed at a front surface of the sealing body; second heat-radiating members exposed at a back surface of the sealing body; first signal terminals electrically connected to the first semiconductor element, and projecting from a top surface of the sealing body in a first direction; and second signal terminals electrically connected to the second semiconductor elements, and projecting from the top surface of the sealing body in the first direction. The top surface of the sealing body includes a first inclined surface, a second inclined surface, and a boundary line or a boundary range located therebetween. The boundary line or the boundary range includes at least part of a minimum creepage path between the first signal terminals and the second signal terminals.Type: ApplicationFiled: December 2, 2016Publication date: June 8, 2017Inventors: Keita Hatasa, Makoto Imai, Tomomi Okumura
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Publication number: 20170162970Abstract: A female connection terminal includes a first female terminal having a substantially cylindrical shape with openings at one end and another end, a second female terminal having a substantially cylindrical shape with openings at one end and another end, and a coupling spring coupling together the first female terminal and the second female terminal at the other end of the first female terminal and the other end of the second female terminal. The coupling spring connects the first female terminal and the second female terminal to each other without, when viewed from an upper side, overlapping at least one of the openings of the first female terminal on the other end side and at least one of the openings of the second female terminal on the other end side.Type: ApplicationFiled: November 22, 2016Publication date: June 8, 2017Applicant: TOYOTA JIDOSHA KABUSHIKI KAISHAInventors: Keita HATASA, Makoto IMAI
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Patent number: 9521758Abstract: A semiconductor device includes a semiconductor module that has an electrode terminal projecting externally; a substrate that has a through hole or a cut-out for inserting the electrode terminal; and a guide member that is provided between the semiconductor module and the substrate and guides the electrode terminal in such a manner that the electrode terminal is inserted into the through hole or the cut-out. The guide member becomes out of contact with the electrode terminal after the electrode terminal is inserted into the through hole or the cut-out.Type: GrantFiled: May 19, 2014Date of Patent: December 13, 2016Assignees: TOYOTA JIDOSHA KABUSHIKI KAISHA, DENSO CORPORATIONInventors: Keita Hatasa, Arata Harada, Daisuke Harada
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Publication number: 20140362540Abstract: A semiconductor device includes a semiconductor module that has an electrode terminal projecting externally; a substrate that has a through hole or a cut-out for inserting the electrode terminal; and a guide member that is provided between the semiconductor module and the substrate and guides the electrode terminal in such a manner that the electrode terminal is inserted into the through hole or the cut-out. The guide member becomes out of contact with the electrode terminal after the electrode terminal is inserted into the through hole or the cut-out.Type: ApplicationFiled: May 19, 2014Publication date: December 11, 2014Applicants: TOYOTA JIDOSHA KABUSHIKI KAISHA, DENSO CORPORATIONInventors: Keita HATASA, Arata HARADA, Daisuke HARADA