Abstract: Provided is a novel device or a novel implantation device. The implantation device is one of the following: (1) an implantation device comprising a material (A) having a density of 12 mg/cm3 or more and a dissolution rate of 80% or less as determined after immersion of the material (A) in physiological saline at 37° C. for 24 hours; and (2) an implantation device comprising a material (A) having a dissolution rate of 80% or less as determined after immersion of the material (A) in physiological saline at 37° C. for 24 hours and a ratio of X/Y of 0.24 or more wherein X is a density (mg/cm3) of the material (A) and Y is a degree of swelling of the material (A) expressed in terms of fold increase as determined after immersion of the material (A) in physiological saline at 37° C. for 60 minutes.

Abstract: In one embodiment, a semiconductor storage device includes a string that has one end electrically connected to a bit line, and another end electrically connected to a source line, and includes a plurality of memory cells. An operation of writing data to each of a plurality of adjacent first memory cells among the plurality of memory cells is sequentially performed in a direction from a first memory cell on a side of the source line to a first memory cell on a side of the bit line. An operation of reading data from each of the plurality of adjacent first memory cells is performed to allow a current to flow through the string in a first direction from the source line to the bit line.

Abstract: A connector includes a first port, a second port, a first sealing member and a second sealing member. The first port and the first pipe sleeve portion are connected with each other such that at least a part of the first port and at least a part of the first pipe sleeve portion engage with each other by fitting and overlap with each other, and a first sealing member is positioned between two overlapping portions. The second port and the second pipe sleeve portion are connected with each other such that at least a part of the second port and at least a part of the second pipe sleeve portion engage with each other by fitting and push each other, and a second sealing member is positioned between two pushing portions.

Abstract: According to one embodiment, a semiconductor memory device includes memory cells and a control circuit configured to control an erase operation on the memory cells. The control circuit sequentially executes, in the erase operation, a first erase process, a first erase verify process, a second erase process, and a second erase verify process on the memory cells, acquires, in the first erase verify process, first memory cells having a threshold voltage equal to or lower than a first verify voltage, from among the memory cells, acquires, in the second erase verify process, the number of second memory cells having a threshold voltage higher than the first verify voltage, from among the first memory cells, and determines whether the number of the second memory cells is larger than a first value or not.

Abstract: An insufflation device includes: a gas feeding conduit for feeding a predetermined gas which is fed from a gas supply source into a body cavity; and a processor. The processor measures a gas feeding time period until a predetermined amount of the gas is fed according to a set pressure, measures a pressure in the body cavity, calculates a gas discharging time period based on the set pressure and a measurement result of the measured pressure; and adjusts a gas feeding flow rate of the gas according to a difference between the measured gas feeding time period and the calculated gas discharging time period.

Abstract: A semiconductor storage device includes memory strings, bit lines connected to the memory strings, respectively, sense transistors of which gates are connected to the bit lines, respectively, first transistors connected between the bit lines and the gates of the sense transistors, respectively, and a control circuit. Each of the memory strings includes first and second memory transistors adjacent to each other. The control circuit is configured to perform, during a first write sequence, a read operation with respect to the second memory transistors, a program operation with respect to the first memory transistors, and a verify operation with respect to the first memory transistors, in this order. During the verify operation, the control circuit turns on the first transistors during a first sense period, and then turns on the first transistors during a second sense period longer than the first sense period.

Abstract: A semiconductor storage device includes memory strings, bit lines connected to the memory strings, respectively, sense transistors of which gates are connected to the bit lines, respectively, first transistors connected between the bit lines and the gates of the sense transistors, respectively, and a control circuit. Each of the memory strings includes first and second memory transistors adjacent to each other. The control circuit is configured to perform, during a first write sequence, a read operation with respect to the second memory transistors, a program operation with respect to the first memory transistors, and a verify operation with respect to the first memory transistors, in this order. During the verify operation, the control circuit turns on the first transistors during a first sense period, and then turns on the first transistors during a second sense period longer than the first sense period.

Abstract: A metal mask material for OLED use reduced in amount warpage due to etching, a method for manufacturing the same, and a metal mask are provided. The metal mask material and metal mask of the present invention contain, by mass %, Ni: 35.0 to 37.0% and Co: 0.00 to 0.50%, have a balance of Fe and impurities, have thicknesses of 5.00 ?m or more and 50.00 ?m or less, and have amounts of warpage defined as maximum values in amounts of rise of four corners of a square shaped sample of the metal mask material of 100 mm sides when etching the sample from one surface until the thickness of the sample becomes ? and placing the etched sample on a surface plate of 5.0 mm or less.

Abstract: An insufflation system includes an insufflation device for supplying gas to a body cavity, and a suction device for suctioning the gas from the body cavity through a suction conduit at a suction flow rate. The insufflation device includes a flow rate sensor for measuring a gas feeding flow rate, a pressure sensor for measuring body cavity internal pressure, a first on-off valve for controlling the gas feeding flow rate, a second on-off valve for opening and closing the suction conduit, and a processor for opening the second on-off valve and controlling the first on-off valve to feed the gas at an amount when a first target gas feeding flow rate calculated from difference between the body cavity internal pressure and insufflation target pressure is lower than a threshold flow rate, the amount being obtained by adding the suction flow rate to the first target gas feeding flow rate.

Abstract: A connection unit for air feeding tube is a connection unit to which an air feeding tube is connectable and fixable and which includes: a first pipe having an opening through which gas from the air feeding tube flows in; a second pipe that is configured to be arrangeable substantially parallel to a surface of a bed used in an examination, and includes an opening through which the gas flows out; and an air feeding flow path which is formed to include the two openings and through which the gas is fed. When the air feeding tube is fixed to the connection unit for air feeding tube and is used, a part of the air feeding flow path for the gas is formed so as to pass through an area located at a position opposite to a gravitational direction with respect to a central axis of the second pipe.

Abstract: A semiconductor storage device includes first, second, and third transistors, first, second, and third bit lines connected to the first, second, and third transistors, a word line connected to the first, second, and third transistors, and a control circuit configured to perform a program operation for writing data to the second and third transistors, including raising a first voltage applied to the first bit line at a first timing, raising a second voltage applied to the word line at a second timing, raising a third voltage applied to the second bit line at a third timing, raising a fourth voltage applied to the third bit line at a fourth timing, and lowering the first voltage at a fifth timing. The first voltage is raised to a first predetermined voltage, and each of the third and fourth voltages is raised to a second predetermined voltage smaller than the first predetermined voltage.

Abstract: A semiconductor storage device includes first, second, and third transistors, first, second, and third bit lines connected to the first, second, and third transistors, a word line connected to the first, second, and third transistors, and a control circuit configured to perform a program operation for writing data to the second and third transistors, including raising a first voltage applied to the first bit line at a first timing, raising a second voltage applied to the word line at a second timing, raising a third voltage applied to the second bit line at a third timing, raising a fourth voltage applied to the third bit line at a fourth timing, and lowering the first voltage at a fifth timing. The first voltage is raised to a first predetermined voltage, and each of the third and fourth voltages is raised to a second predetermined voltage smaller than the first predetermined voltage.

Abstract: An insufflation device includes: a gas feeding conduit through which a gas is supplied to a body cavity of a patient; a first open/close valve mounted on the gas feeding conduit, the first open/close valve being an electromagnetic valve configured to control a flow rate of the gas flowing through the gas feeding conduit by pulse width modulation; and a controller, the controller being configured to: detect a current value of a current which flows through the first open/close valve; calculate a resistance value of the first open/close valve based on the current value; determine a duty ratio of a pulse signal applied to the first open/close valve based on the resistance value and a target gas feeding flow rate of the gas supplied to a body cavity; and supply the pulse signal, an effective voltage of which is adjusted, to the first open/close valve.

Abstract: A connector includes a first port, a second port, a first sealing member and a second sealing member. The first port and the first pipe sleeve portion are connected with each other such that at least a part of the first port and at least a part of the first pipe sleeve portion engage with each other by fitting and overlap with each other, and a first sealing member is positioned between two overlapping portions. The second port and the second pipe sleeve portion are connected with each other such that at least a part of the second port and at least a part of the second pipe sleeve portion engage with each other by fitting and push each other, and a second sealing member is positioned between two pushing portions.

Abstract: A semiconductor memory device comprises: a memory transistor; a first wiring connected to a gate electrode of the memory transistor; and a control device that executes a read operation to read data of the memory transistor and a write operation to write data in the memory transistor. In the read operation or the write operation, the control device: increases a voltage of the first wiring to a first voltage from a first timing to a second timing; and adjusts a length from the first timing to the second timing corresponding to at least one of a voltage of the first wiring, a current of the first wiring, and an amount of charge flowed through the first wiring.

Abstract: An insufflation device includes: a gas feeding conduit for feeding a predetermined gas which is fed from a gas supply source into a body cavity; and a processor. The processor measures a gas feeding time period until a predetermined amount of the gas is fed according to a set pressure, measures a pressure in the body cavity, calculates a gas discharging time period based on the set pressure and a measurement result of the measured pressure; and adjusts a gas feeding flow rate of the gas according to a difference between the measured gas feeding time period and the calculated gas discharging time period.

Abstract: A gas feeding apparatus includes first and second temperature sensors for measuring a temperature of an atmosphere that are disposed in a housing. The apparatus may also include a panel, a protrusion protruding forward from the panel, a first opening provided in the panel in a vicinity of the first temperature sensor, and a second opening provided in the panel in a vicinity of the second temperature sensor. The first temperature sensor and the second temperature sensor are separated by a predetermined distance in a horizontal direction and disposed below the protrusion.

Abstract: A pipe for fluid supply includes: a pipe configured integrally with an air feeding conduit and a pressure measurement conduit; inlets of the air feeding conduit and the pressure measurement conduit; outlets of the air feeding conduit and the pressure measurement conduit; and tube connection portions provided at the respective inlets in the pipe such that an angle between a vertical direction of the respective inlets and a vertical direction of each the respective outlets is 30° to 60°.

Abstract: A semiconductor memory device comprises: a memory transistor; a first wiring connected to a gate electrode of the memory transistor; and a control device that executes a read operation to read data of the memory transistor and a write operation to write data in the memory transistor. In the read operation or the write operation, the control device: increases a voltage of the first wiring to a first voltage from a first timing to a second timing; and adjusts a length from the first timing to the second timing corresponding to at least one of a voltage of the first wiring, a current of the first wiring, and an amount of charge flowed through the first wiring.

Abstract: According to one embodiment, a semiconductor memory device includes a memory string including a first select transistor, a first transistor adjacent to the first select transistor, and a memory cell transistor, a first select gate line, a first interconnect, a word line, a row decoder, a temperature sensor, and a control circuit. In the erase operation, the control circuit selects a first mode for applying a first voltage to the first interconnect when a temperature measured by the temperature sensor is equal to or higher than a first temperature, and selects a second mode for applying a second voltage to the first interconnect when the temperature measured is less than the first temperature.