Abstract: A semiconductor device includes an insulating layer, a semiconductor layer and a control electrode. The semiconductor layer is provided on the insulating layer and includes a first semiconductor region of a first conductivity type, a second semiconductor region of the first conductivity type and a third semiconductor region of a second conductivity type. The third semiconductor region is located between the first semiconductor region and the second semiconductor region. The first to third semiconductor regions are arranged in a first direction along an interface between the insulating layer and the semiconductor layer. The control electrode is provided on the semiconductor layer and includes first to third control parts arranged in the first direction. The first control part is located between the second control part and the third control part. The third semiconductor region is positioned between the insulating layer and the first control part.

Abstract: Photoelectric conversion apparatus includes read circuit for reading signals of pixel array, and signal processing unit for generating pixel signal by performing CDS on signals read by the read circuit and performing shading correction on the pixel signal. The read circuit has function of reading signal of the pixel array with first and second gain. The read circuit reads noise level with the first gain and reads optical signal level with the first or second gain from selected effective pixel for the correlated double sampling. In the shading correction, pixel signal of effective pixel from which optical signal level has been read with the first gain is corrected based on first correction value, and pixel signal of effective pixel from which optical signal level has been read with the second gain is corrected based on second correction value.

Abstract: A photoelectric conversion apparatus includes a pixel array having a plurality of column signal lines which are divided into a plurality of groups, a readout circuit configured to read out signals from the pixel array via the plurality of column signal lines. A holding unit includes one first region and a plurality of second regions. A plurality of first correction values respectively corresponding to the plurality of columns are stored in the first region. Each second region is associated with a readout condition for reading signals from each pixel unit of the pixel array by the readout circuit, and a plurality of second correction values respectively corresponding to the plurality of groups are stored in each second region.

Abstract: A semiconductor device includes an insulating layer, a semiconductor layer on the insulating layer, and a control electrode on the semiconductor layer. The semiconductor layer includes first and second semiconductor parts and a separation trench between the first and second semiconductor parts. The first and second semiconductor parts extending along the insulating film. The first semiconductor part includes first and second regions of a first conductivity type, and a fifth region of a second conductivity type between the first and second regions. The second semiconductor part includes third and fourth regions of the second conductivity type, and a sixth region of the second conductivity type between the third and fourth regions. The control electrode extends over the fifth and sixth regions. The semiconductor layer further including a seventh region of the second conductivity type at a bottom of the separation trench and electrically connecting the fifth and sixth regions.

Abstract: A high frequency transistor includes a first semiconductor layer, a first insulating film and a control electrode. The first semiconductor layer on the first insulating film extends in a first direction along an upper surface of the first insulating film. The first semiconductor layer has a first layer thickness in a second direction perpendicular to the upper surface, and a first width in a third direction orthogonal to the first direction. The first width is greater than the first layer thickness. The control electrode covers upper and side surfaces of the first semiconductor layer. The first semiconductor layer includes a first region of a first conductivity type, second and third regions of a second conductivity type. The first to third regions are arranged in the first direction. The first region is provided between the second and third region. The control electrode covers the first region.

Abstract: A high frequency transistor includes a first semiconductor layer, a first insulating film and a control electrode. The first semiconductor layer on the first insulating film extends in a first direction along an upper surface of the first insulating film. The first semiconductor layer has a first layer thickness in a second direction perpendicular to the upper surface, and a first width in a third direction orthogonal to the first direction. The first width is greater than the first layer thickness. The control electrode covers upper and side surfaces of the first semiconductor layer. The first semiconductor layer includes a first region of a first conductivity type, second and third regions of a second conductivity type. The first to third regions are arranged in the first direction. The first region is provided between the second and third region. The control electrode covers the first region.

Abstract: The total internal reflection microscope has an illumination optical system that relays light from a light source with a relay optical system, forms an image of the light source on the incident pupil plane of the objective lens and irradiates a sample with the illumination light via an objective lens, has an angle adjustment mirror for changing the position of the image of the light source in a direction orthogonal to the optical axis, an optical detector for detecting the intensity of the returning illumination light reflected by the sample and collected by the objective lens, and a controller for determining the operation amount of the angle adjustment mirror, wherein the controller determines the operation amount of the angle adjustment mirror so that the illumination light is totally reflected at the sample based on the change in intensity of the returning light when the angle adjustment mirror is changed.

Abstract: An information processing apparatus includes a depth image acquisition unit configured to acquire a depth image from a measurement apparatus that has measured a distance to an object, an image acquisition unit configured to acquire a captured image from an image capturing apparatus that has captured an image of the object, and an estimation unit configured to estimate a shape of the object based on the depth image and the captured image. The estimation unit acquires information about a contour of the object from the captured image, corrects the information about the contour based on the depth image, and estimates the shape of the object based on the corrected information about the contour.

Abstract: A radio frequency switch includes a switch circuit having switchable radio frequency (RF) signal pathways. Each switchable RF signal pathway comprises a plurality of n-type MOSFETs connected in series. A control circuit is configured to control a conduction state of the plurality of switchable RF signal pathways. Each n-type MOSFET includes a body region between a source region thereof and a drain region thereof. A gate electrode is on the body region. A silicon nitride film having a tensile internal stress covers the source layer, the drain layer, and the gate electrode.

Abstract: The total internal reflection microscope has an illumination optical system that relays light from a light source with a relay optical system, forms an image of the light source on the incident pupil plane of the objective lens and irradiates a sample with the illumination light via an objective lens, has an angle adjustment mirror for changing the position of the image of the light source in a direction orthogonal to the optical axis, an optical detector for detecting the intensity of the returning illumination light reflected by the sample and collected by the objective lens, and a controller for determining the operation amount of the angle adjustment mirror, wherein the controller determines the operation amount of the angle adjustment mirror so that the illumination light is totally reflected at the sample based on the change in intensity of the returning light when the angle adjustment mirror is changed.

Abstract: The total internal reflection microscope has an illumination optical system that relays light from a light source with a relay optical system, forms an image of the light source on the incident pupil plane of the objective lens and irradiates a sample with the illumination light via an objective lens, has an angle adjustment mirror for changing the position of the image of the light source in a direction orthogonal to the optical axis, an optical detector for detecting the intensity of the returning illumination light reflected by the sample and collected by the objective lens, and a controller for determining the operation amount of the angle adjustment mirror, wherein the controller determines the operation amount of the angle adjustment mirror so that the illumination light is totally reflected at the sample based on the change in intensity of the returning light when the angle adjustment mirror is changed.

Abstract: An information processing apparatus includes a depth image acquisition unit configured to acquire a depth image from a measurement apparatus that has measured a distance to an object, an image acquisition unit configured to acquire a captured image from an image capturing apparatus that has captured an image of the object, and an estimation unit configured to estimate a shape of the object based on the depth image and the captured image. The estimation unit acquires information about a contour of the object from the captured image, corrects the information about the contour based on the depth image, and estimates the shape of the object based on the corrected information about the contour.

Abstract: A radio frequency switch includes a switch circuit having switchable radio frequency (RF) signal pathways. Each switchable RF signal pathway comprises a plurality of n-type MOSFETs connected in series. A control circuit is configured to control a conduction state of the plurality of switchable RF signal pathways. Each n-type MOSFET includes a body region between a source region thereof and a drain region thereof. A gate electrode is on the body region. A silicon nitride film having a tensile internal stress covers the source layer, the drain layer, and the gate electrode.

Abstract: According to one embodiment, a semiconductor switch circuit includes a semiconductor substrate, an insulating film, a semiconductor layer, a first wiring line, a semiconductor switch unit, and a first conductor. The insulating film is provided on the semiconductor substrate. The semiconductor layer is provided on the insulating film. The first wiring line is provided above the insulating film. The semiconductor switch unit is provided on the semiconductor layer and is electrically connected to the first wiring line. The first conductor is provided between the first wiring line and the semiconductor substrate.

Abstract: The total internal reflection microscope has an illumination optical system that relays light from a light source with a relay optical system, forms an image of the light source on the incident pupil plane of the objective lens and irradiates a sample with the illumination light via an objective lens, has an angle adjustment mirror for changing the position of the image of the light source in a direction orthogonal to the optical axis, an optical detector for detecting the intensity of the returning illumination light reflected by the sample and collected by the objective lens, and a controller for determining the operation amount of the angle adjustment mirror, wherein the controller determines the operation amount of the angle adjustment mirror so that the illumination light is totally reflected at the sample based on the change in intensity of the returning light when the angle adjustment mirror is changed.

Abstract: According to one embodiment, a semiconductor switch circuit includes a semiconductor substrate, an insulating film, a semiconductor layer, a first wiring line, a semiconductor switch unit, and a first conductor. The insulating film is provided on the semiconductor substrate. The semiconductor layer is provided on the insulating film. The first wiring line is provided above the insulating film. The semiconductor switch unit is provided on the semiconductor layer and is electrically connected to the first wiring line. The first conductor is provided between the first wiring line and the semiconductor substrate.

Abstract: A semiconductor device includes: a collector region having a first conductivity type; an intrinsic base region having a second conductivity type provided on the collector region; an emitter region having the first conductivity type formed in an upper section of the intrinsic base region; an isolation region provided on a side of the collector region directly under the intrinsic base region; an extrinsic base region having the second conductivity type provided adjacent to the intrinsic base region, and having a higher impurity concentration than the intrinsic base region; and a base electrode region provided on the isolation region, and contacting a side of the extrinsic base region so as to have a region at the same level as the intrinsic base region.

Abstract: A semiconductor device includes: a collector region of first conductive type formed on a semiconductor substrate; a base region of second conductive type formed on the collector region of first conductive type; a non-doped layer forming region formed in part of a surface region of the base region of second conductive type; an emitter region of first conductive type formed in the non-doped layer forming region so that a bottom of the emitter region reaches the base region of second conductive type; a base leading-out region of second conductive type formed on the base region of second conductive type; a dielectric formed on an upper portion and a side portion of the base leading-out region of second conductive type and the non-doped layer forming region; and an emitter leading-out region of first conductive type formed on the emitter region of first conductive type.