Abstract: A silicon carbide thin film circuit element, in which a layer of .beta.-SiC is allowed to grow laterally also on the surface of a P-type Si monocrystal substrate by vapor growth deposition, to form a circuit element is formed on an insulating material layer having a high melting point.

Abstract: A hetero junction bipolar transistor which is high both in operating speed and in gain. The hetero junction bipolar transistor has a base layer consisting of Si (silicon) grown laterally by epitaxial growth, which isolates a collector region and an external base region from each other.

Abstract: A heterojunction bipolar transistor includes a 3c-silicon carbide crystal layer of a first conductive-type, a silicon crystal layer of a second conductive-type and another 3c-silicon carbide crystal layer which are sequentially formed to define a stair-like configuration on a substrate. The two 3c-silicon carbide crystal layers serve as a collector region and an emitter region, respectively while the silicon crystal layer of a second conductive-type serve as a base region. Each step of the stair-like configuration is formed thereon with an electrode for the respective region. In the above-mentioned transistor, an injection of positive holes or electrons which move from the base region to the collector region does not arise, hence only an amount of an electric accumulation in the base region determines the operation speed of the device.

Abstract: A hetero-junction bi-polar transistor provided with a collector composed of a .beta. - SiC substrate and a base area composed of a .beta. - SiC layer and an emitter area composed of an .alpha. - SiC layer, thereby forming a hetero-junction bi-polar transistor having superior heat resistance.

Abstract: A present invention is intended to provide a semiconductor device having a structure in which devices are formed in a thin layer (18) of silicon carbide having reduced crystal faults on a silicon substrate (2). A silicon dioxide layer (4) is formed on the semiconductor substrate (2) (FIG. 2A). The silicon dioxide layer (4) is then provided with openings (14) (FIG. 2D). Silicon carbide is grown from the openings until it covers the insulating layer to thereby form a silicon carbide crystal layer (16) (FIG. 3A). The silicon carbide crystal layer (16) is then covered by a SOG layer 20 over the whole surface and subjected to anisotropic etching, whereby a thin layer of silicon carbide is left on the substrate (2) (FIG. 3C). Semiconductor circuit devices are formed in this thin layer (18). Since the layer (18) is grown laterally and has almost uniform plane orientation, it can provide a semiconductor device formed therein with superior electrical characteristics.

Abstract: A solid state imaging device of claim 1, wherein the silicon carbide crystal layer is formed on a silicon substrate such that the insulating film is interposed between said silicon carbide crystal layer and said silicon substrate. Since the charge transfer part and the imaging part are formed in the silicon carbide layer, the device can normally operate even in a high-temperature or intensive radioactive ray environment the method for producing the device is also disclosed.

Abstract: High concentration polysilicon is grown on the silicon carbide so as to effect the connection through the polysilicon, thereby to obtain a better wiring construction in the connection between silicon carbide conductor basic plate and wiring.

Abstract: A heterojunction bipolar transistor comprising a semiconductor substrate of a first conductive-type, a first conductive-type layer of 3c-SiC, a second conductive-type layer of Si and another first conductive-type layer of 3c-SiC. The two first conductive-type layers serve respectively as collector region and emitter region and the second conductive-type layer serves as base region, and a method for producing the same. A transistor of the present invention is effective for devices such as I.sup.2 L circuit wherein reverse directional operation of transistor is utilized.