Patents by Inventor Keita Nishigaya

Keita Nishigaya has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of manufacturing semiconductor device
    Patent number: 9431285
    Abstract: A method of manufacturing a semiconductor device including performing a first thermal processing a silicon substrate in a first atmosphere and at a first temperature to remove an oxide film above a surface of the silicon substrate, and after the first thermal processing, performing a second thermal processing the silicon substrate in a second atmosphere containing hydrogen and at a second temperature lower than the first temperature to terminate the surface of the silicon substrate with hydrogen.
    Type: Grant
    Filed: November 30, 2012
    Date of Patent: August 30, 2016
    Assignee: FUJITSU SEMICONDUCTOR LIMITED
    Inventors: Naoyoshi Tamura, Keita Nishigaya, Mitsuaki Hori, Hiroe Kawamura
  • Method of manufacturing semiconductor device
    Patent number: 9390960
    Abstract: A method of manufacturing a semiconductor device including performing a first thermal processing a silicon substrate in a first atmosphere and at a first temperature to remove an oxide film above a surface of the silicon substrate, and after the first thermal processing, performing a second thermal processing the silicon substrate in a second atmosphere containing hydrogen and at a second temperature lower than the first temperature to terminate the surface of the silicon substrate with hydrogen.
    Type: Grant
    Filed: November 30, 2012
    Date of Patent: July 12, 2016
    Assignee: FUJITSU SEMICONDUCTOR LIMITED
    Inventors: Naoyoshi Tamura, Keita Nishigaya, Mitsuaki Hori, Hiroe Kawamura