Patents by Inventor Keita Sasaki
Keita Sasaki has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9273379Abstract: A titanium alloy product according to the present invention: has a strength level higher than that of an existing titanium alloy product; can be successfully cold rolled (coil rolled); and is also provided with workability. In the titanium alloy product according to the invention, expensive alloy elements are not essentially required, and hence cost can be suppressed. The titanium alloy product according to the invention includes Al equivalent represented by (Al+10O (oxygen)): 3.5 to 7.2% (% by mass, the same hereinafter), Al: more than 1.0% and 4.5% or less, O: 0.60% or less, Fe equivalent represented by (Fe+0.5Cr+0.5Ni+0.67Co+0.67Mn): 0.8% or more and less than 2.0%, and one or more elements selected from the group consisting of Cu: 0.4 to 3.0% and Sn: 0.4 to 10%, in which the balance is Ti and unavoidable impurities.Type: GrantFiled: April 24, 2013Date of Patent: March 1, 2016Assignee: Kobe Steel, Ltd.Inventors: Takashi Konno, Keita Sasaki, Yoshio Itsumi, Hideto Oyama
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Publication number: 20160011323Abstract: A photodetector according to an embodiment includes: a photodetector element unit including a first cell array including a plurality of first cells arranged in an array and a second sell array including a plurality of second cells arranged in an array, each of the first and second cells including a photoelectric conversion element, the second cell array being arranged to be adjacent to the first cell array; a first pulse height analyzer unit analyzing a pulse height of an electrical signal outputted from the first cell array; a second pulse height analyzer unit analyzing a pulse height of an electrical signal outputted from the second cell array; and a signal processing unit determining non-uniformity of a distribution of photons entering the first and second cell arrays using an output signal of the first pulse height analyzer unit and an output signal of the second pulse height analyzer unit.Type: ApplicationFiled: July 10, 2015Publication date: January 14, 2016Inventors: Keita Sasaki, Shunsuke Kimura
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Patent number: 9170160Abstract: An imaging device according to an embodiment includes: a semiconductor substrate; a reference pixel with a first concave portion disposed in a first portion of a surface of the semiconductor substrate; and one or more infrared detection pixels each configured to detect light with a second concave portion disposed in a second portion of the surface of the semiconductor substrate, the reference pixel being directly connected to the semiconductor substrate at a position where the first concave portion is not present, and including a first thermoelectric conversion unit configured to convert heat to an electric signal, the first thermoelectric conversion unit being disposed in the first concave portion and including a first thermoelectric conversion element, each infrared detection pixel including a second thermoelectric conversion unit being disposed in the second concave portion and including a second thermoelectric conversion element.Type: GrantFiled: April 22, 2015Date of Patent: October 27, 2015Assignee: KABUSHIKI KAISHA TOSHIBAInventors: Hiroto Honda, Kazuhiro Suzuki, Hideyuki Funaki, Masaki Atsuta, Keita Sasaki, Koichi Ishii, Honam Kwon
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Publication number: 20150268361Abstract: According to an embodiment, a photodetector includes a photodetecting element that has a pn junction and outputs a photocurrent corresponding to detected light, a voltage applying unit that applies a voltage to the photodetecting element, an obtaining unit that obtains the photocurrent detected by the photodetecting element, and a voltage controller. The voltage controller controls the voltage applying unit to apply, during a drive period, a drive voltage whose absolute value is not smaller than an avalanche breakdown voltage of the pn junction and which is in reverse bias with respect to the pn junction; and apply, during a standby period, any of a first standby voltage in forward bias, a second standby voltage with a voltage value of 0 V, and a third standby voltage whose absolute value is greater than 0 V, which is less than the drive voltage, and which is in reverse bias.Type: ApplicationFiled: March 6, 2015Publication date: September 24, 2015Inventors: Masaki ATSUTA, Keita SASAKI, Hitoshi YAGI, Rei HASEGAWA
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Publication number: 20150241282Abstract: An imaging device according to an embodiment includes: a semiconductor substrate; a reference pixel with a first concave portion disposed in a first portion of a surface of the semiconductor substrate; and one or more infrared detection pixels each configured to detect light with a second concave portion disposed in a second portion of the surface of the semiconductor substrate, the reference pixel being directly connected to the semiconductor substrate at a position where the first concave portion is not present, and including a first thermoelectric conversion unit configured to convert heat to an electric signal, the first thermoelectric conversion unit being disposed in the first concave portion and including a first thermoelectric conversion element, each infrared detection pixel including a second thermoelectric conversion unit being disposed in the second concave portion and including a second thermoelectric conversion element.Type: ApplicationFiled: April 22, 2015Publication date: August 27, 2015Applicant: KABUSHIKI KAISHA TOSHIBAInventors: Hiroto HONDA, Kazuhiro SUZUKI, Hideyuki FUNAKI, Masaki ATSUTA, Keita SASAKI, Koichi ISHII, Honam KWON
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Patent number: 9109953Abstract: A photodetector according to an embodiment includes: a photodetector element unit including a first cell array including a plurality of first cells arranged in an array and a second cell array including a plurality of second cells arranged in an array, each of the first and second cells including a photoelectric conversion element, the second cell array being arranged to be adjacent to the first cell array; a first pulse height analyzer unit analyzing a pulse height of an electrical signal outputted from the first cell array; a second pulse height analyzer unit analyzing a pulse height of an electrical signal outputted from the second cell array; and a signal processing unit determining non-uniformity of a distribution of photons entering the first and second cell arrays using an output signal of the first pulse height analyzer unit and an output signal of the second pulse height analyzer unit.Type: GrantFiled: May 20, 2014Date of Patent: August 18, 2015Assignee: Kabushiki Kaisha ToshibaInventors: Keita Sasaki, Shunsuke Kimura
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Publication number: 20150108358Abstract: According to an embodiment, a photodetector includes a scintillator layer, a photodetection layer, an antireflective member, and an intermediate layer. The scintillator layer is configured to convert radiation into light. The photodetection layer has a first surface facing the scintillator layer. The photodetection layer includes a pixel region that includes multiple photodetection devices configured to detect light, and a peripheral region that surrounds the pixel region. The pixel region and the peripheral region are provided on the first surface. The antireflective member is provided between the scintillator layer and the photodetection layer and opposed to at least part of the peripheral region. The antireflective member is configured to prevent reflection of at least part of light in a sensitive wavelength range of the photodetection devices. The intermediate layer is provided in a region other than the antireflective member between the scintillator layer and the photodetection layer.Type: ApplicationFiled: September 4, 2014Publication date: April 23, 2015Inventors: Keita SASAKI, Rei HASEGAWA
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Publication number: 20150084149Abstract: A radiation detector according to an embodiment includes: a semiconductor substrate; a light detecting unit provided on a side of a first surface of the semiconductor substrate; a first insulating film provided covering the light detecting unit; a second insulating film covering the first insulating film; a scintillator provided on the second insulating film; an interconnection provided between the first and second insulating films, and connected to the light detecting unit; a first electrode connected to the interconnection through a bottom portion of the first opening; a second electrode provided on a region in the second surface of the semiconductor substrate, the region opposing at least a part of the light detecting unit; a second opening provided in a region surrounding the first electrode and not surrounding the second electrode; and an insulating resin layer covering the first and second electrodes and the first and second openings.Type: ApplicationFiled: September 5, 2014Publication date: March 26, 2015Inventors: Hitoshi YAGI, Rei HASEGAWA, Masaki ATSUTA, Yasuharu HOSONO, Keita SASAKI, Go KAWATA
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Publication number: 20140367576Abstract: A photodetector according to an embodiment includes: a photodetector element unit including a first cell array including a plurality of first cells arranged in an array and a second cell array including a plurality of second cells arranged in an array, each of the first and second cells including a photoelectric conversion element, the second cell array being arranged to be adjacent to the first cell array; a first pulse height analyzer unit analyzing a pulse height of an electrical signal outputted from the first cell array; a second pulse height analyzer unit analyzing a pulse height of an electrical signal outputted from the second cell array; and a signal processing unit determining non-uniformity of a distribution of photons entering the first and second cell arrays using an output signal of the first pulse height analyzer unit and an output signal of the second pulse height analyzer unit.Type: ApplicationFiled: May 20, 2014Publication date: December 18, 2014Applicant: KABUSHIKI KAISHA TOSHIBAInventors: Keita SASAKI, Shunsuke Kimura
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Patent number: 8749010Abstract: According to one embodiment, an infrared imaging device includes a substrate, a detecting section, an interconnection, a contact plug and a support beam. The detecting section is provided above the substrate and includes an infrared absorbing section and a thermoelectric converting section. The interconnection is provided on an interconnection region of the substrate and is configured to read the electrical signal. The contact plug is extends from the interconnection toward a connecting layer provided in the interconnection region. The contact plug is electrically connected to the interconnection and the connecting layer. The support beam includes a support beam interconnection and supports the detecting section above the substrate. The support beam interconnection transmits the electrical signal from the thermoelectric converting section to the interconnection.Type: GrantFiled: March 21, 2012Date of Patent: June 10, 2014Assignee: Kabushiki Kaisha ToshibaInventors: Ikuo Fujiwara, Hitoshi Yagi, Keita Sasaki
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Publication number: 20140132279Abstract: An apparatus includes: a current control unit to control an amount of constant current and supply a first and second constant currents to an infrared detection pixel; a constant current supply time control unit to control periods of time in which the first and second constant currents are supplied to the infrared detection pixel; an A-D converter to convert a first and second electrical signals from the infrared detection pixel into a first and second digital signals, the first and second electrical signals being generated when the first and second constant currents is supplied to the infrared detection pixel, respectively; a subtracting unit to calculate a difference between the first and second digital signals; and a determining unit to determine whether the infrared detection pixel is a defective pixel based on the absolute value of the difference calculated by the subtracting unit.Type: ApplicationFiled: October 28, 2013Publication date: May 15, 2014Applicant: KABUSHIKI KAISHA TOSHIBAInventors: Hiroto Honda, Koichi Ishii, Hideyuki Funaki, Keita Sasaki
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Patent number: 8629396Abstract: An uncooled infrared imaging element includes a pixel region, a device region, and a support substrate. The pixel region includes heat-sensitive pixels. The heat-sensitive pixels are arranged in a matrix and change current-voltage characteristics thereof in accordance with receiving amounts of infrared. The device region includes at least one of a drive circuit and a readout circuit which includes a MOS transistor. The drive circuit drives the heat-sensitive pixels. The readout circuit detects signals of the heat-sensitive pixels. The support substrate is provided with a cavity region to be under pixel region and the MOS transistor.Type: GrantFiled: September 18, 2011Date of Patent: January 14, 2014Assignee: Kabushiki Kaisha ToshibaInventors: Masako Ogata, Ikuo Fujiwara, Hiroto Honda, Kazuhiro Suzuki, Honam Kwon, Risako Ueno, Hitoshi Yagi, Masaki Atsuta, Koichi Ishii, Keita Sasaki, Hideyuki Funaki
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Publication number: 20130248714Abstract: An uncooled infrared imaging device according to an embodiment includes: reference pixels formed on a semiconductor substrate and arranged in at least one row; and infrared detection pixels arranged in the remaining rows and detecting incident infrared rays. Each of the reference pixels includes a first cell located above a first concave portion. The first cell includes a first thermoelectric conversion unit having a first infrared absorption film; and a first thermoelectric conversion element. Each of the infrared detection pixels includes a second cell located above a second concave portion, and having a larger area than the first cell. The second cell includes: a second thermoelectric converting unit located above the second concave portion; and first and second supporting structure units supporting the second thermoelectric converting unit above the second concave portion. The second thermoelectric converting unit includes: a second infrared absorption film; and a second thermoelectric conversion element.Type: ApplicationFiled: December 27, 2012Publication date: September 26, 2013Inventors: Hiroto Honda, Kazuhiro Suzuki, Hideyuki Funaki, Masaki Atsuta, Keita Sasaki, Koichi Ishii, Honam Kwon
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Patent number: 8541861Abstract: According to one embodiment, an infrared detection device includes a detection element. The detection element includes a semiconductor substrate, a signal interconnect section, a detection cell and a support section. The semiconductor substrate is provided with a cavity on a surface of the semiconductor substrate. The signal interconnect section is provided in a region surrounding the cavity of the semiconductor substrate. The detection cell spaced from the semiconductor substrate above the cavity includes a thermoelectric conversion layer, and an absorption layer. The absorption layer is laminated with the thermoelectric conversion layer, and provided with a plurality of holes each having a shape whose upper portion is widened. The support section holds the detection cell above the cavity and connects the signal interconnect section and the detection cell.Type: GrantFiled: March 23, 2011Date of Patent: September 24, 2013Assignee: Kabushiki Kaisha ToshibaInventors: Masaki Atsuta, Hideyuki Funaki, Keita Sasaki
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Publication number: 20130093902Abstract: An infrared solid state imaging device includes an infrared detection element unit having heat sensitive pixels, an AD conversion unit which conducts analog-to-digital conversion on an infrared image signal obtained by the infrared detection element unit, and a digital signal processing unit which converts the image signal converted to a digital signal. The digital signal processing unit stores an image value produced from the digital signal, and acquired in a frame immediately preceding a current frame, subtracts an image value obtained by multiplying the image value acquired in the frame immediately preceding the current frame by a predetermined constant ? in a range of 0 to 1, from an image value acquired in the current frame, and conducts processing of multiplying a resultant image value obtained by the subtraction by 1/(1??) so that an infrared image with less afterimage is provided.Type: ApplicationFiled: October 10, 2012Publication date: April 18, 2013Inventors: Hiroto HONDA, Hideyuki Funaki, Keita Sasaki, Kazuhiro Suzuki, Masaki Atsuta, Koichi Ishii, Ikuo Fujiwara
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Patent number: 8415622Abstract: An infrared imaging element according to an embodiment includes: a semiconductor substrate including a stacked structure of a silicon first substrate, and a first insulation film, first cavities being provided on a surface of the first substrate; an infrared detection unit provided in the semiconductor substrate and including, detection cells provided respectively over the first cavities, each of the detection cells having diodes and a second insulation film, the first insulation film converting incident infrared rays to heat, the diodes converting the heat obtained by the first insulation film to an electric signal, a third insulation film having a top face located at a greater distance from the semiconductor substrate as compared with a top face of the second insulation film; and a second substrate provided over the third insulation film. A second cavity is formed between the second substrate and the infrared detection unit.Type: GrantFiled: March 8, 2012Date of Patent: April 9, 2013Assignee: Kabushiki Kaisha ToshibaInventors: Kazuhiro Suzuki, Hiroto Honda, Ikuo Fujiwara, Hideyuki Funaki, Hitoshi Yagi, Keita Sasaki, Honam Kwon, Koichi Ishii, Masako Ogata, Risako Ueno
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Patent number: 8338902Abstract: An uncooled infrared image sensor according to an embodiments includes: a plurality of pixel cells formed in a first region on a semiconductor substrate; a reference pixel cell formed in a second region on the semiconductor substrate and corresponding to each row or each column of the pixel cells; a supporting unit formed for each of the pixel cell and supporting a corresponding pixel cell; and an interconnect unit formed for each reference pixel cell. Each of the pixel cells includes: a first infrared absorption film and a first heat sensitive element. The reference pixel cell includes: a second infrared absorption film and a second heat sensitive element, the second heat sensitive element having the same characteristics as characteristics of the first heat sensitive element. The third and fourth interconnects of the interconnect unit have the same electrical resistance as electrical resistance of the first and second interconnects of the supporting unit.Type: GrantFiled: March 17, 2011Date of Patent: December 25, 2012Assignee: Kabushiki Kaisha ToshibaInventors: Honam Kwon, Hideyuki Funaki, Hiroto Honda, Hitoshi Yagi, Ikuo Fujiwara, Masaki Atsuta, Kazuhiro Suzuki, Keita Sasaki, Koichi Ishii
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Patent number: 8304848Abstract: Certain embodiments provide an infrared imaging device including: an SOI structure that is placed at a distance from a substrate, and includes: heat-sensitive diodes that detect infrared rays and convert the infrared rays into heat; and STI regions that separate the heat-sensitive diodes from one another; an interlayer insulating film that is stacked on the SOI structure; and supporting legs that are connected to the heat-sensitive diodes and vertical signal lines provided in outer peripheral regions of the heat-sensitive diodes. Each of the supporting legs includes: an interconnect unit that transmit signals to the vertical signal lines; and interlayer insulating layers that sandwich the interconnect unit, each bottom side of the interlayer insulating layers being located in a higher position than the SOI structure.Type: GrantFiled: September 16, 2010Date of Patent: November 6, 2012Assignee: Kabushiki Kaisha ToshibaInventors: Kazuhiro Suzuki, Ikuo Fujiwara, Keita Sasaki, Honam Kwon, Hitoshi Yagi, Hiroto Honda, Koichi Ishii, Masako Ogata, Risako Ueno, Hideyuki Funaki
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Publication number: 20120228496Abstract: An uncooled infrared imaging element includes a pixel region, a device region, and a support substrate. The pixel region includes heat-sensitive pixels. The heat-sensitive pixels are arranged in a matrix and change current-voltage characteristics thereof in accordance with receiving amounts of infrared. The device region includes at least one of a drive circuit and a readout circuit which includes a MOS transistor. The drive circuit drives the heat-sensitive pixels. The readout circuit detects signals of the heat-sensitive pixels. The support substrate is provided with a cavity region to be under pixel region and the MOS transistor.Type: ApplicationFiled: September 18, 2011Publication date: September 13, 2012Applicant: KABUSHIKI KAISHA TOSHIBAInventors: Masako OGATA, Ikuo Fujiwara, Hiroto Honda, Kazuhiro Suzuki, Honam Kwon, Risako Ueno, Hitoshi Yagi, Masaki Atsuta, Koichi Ishii, Keita Sasaki, Hideyuki Funaki
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Publication number: 20120228497Abstract: An infrared imaging element according to an embodiment includes: a semiconductor substrate including a stacked structure of a silicon first substrate, and a first insulation film, first cavities being provided on a surface of the first substrate; an infrared detection unit provided in the semiconductor substrate and including, detection cells provided respectively over the first cavities, each of the detection cells having diodes and a second insulation film, the first insulation film converting incident infrared rays to heat, the diodes converting the heat obtained by the first insulation film to an electric signal, a third insulation film having a top face located at a greater distance from the semiconductor substrate as compared with a top face of the second insulation film; and a second substrate provided over the third insulation film. A second cavity is formed between the second substrate and the infrared detection unit.Type: ApplicationFiled: March 8, 2012Publication date: September 13, 2012Applicant: KABUSHIKI KAISHA TOSHIBAInventors: Kazuhiro SUZUKI, Hiroto Honda, Ikuo Fujiwara, Hideyuki Funaki, Hitoshi Yagi, Keita Sasaki, Honam Kwon, Koichi Ishii, Masako Ogata, Risako Ueno