Patents by Inventor Keita SUDA
Keita SUDA has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240020520Abstract: A memristor includes a first variable conductance element and a second variable conductance element. A minimum value of conductance of the second variable conductance element during reading is larger than a maximum value of conductance of the first variable conductance element during reading. In the memristor, a first read path when the conductance of the first variable conductance element is read merges with a second read path when the conductance of the second variable conductance element is read.Type: ApplicationFiled: July 15, 2022Publication date: January 18, 2024Applicant: TDK CORPORATIONInventors: Shogo YAMADA, Keita SUDA, Yukio TERASAKI, Tomoyuki SASAKI
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Patent number: 11832526Abstract: A spin-orbit-torque magnetization rotational element includes: a ferromagnetic metal layer, a magnetization direction of the ferromagnetic metal layer being configured to change; a spin-orbit torque wiring which extends in the first direction intersecting a lamination direction of the ferromagnetic metal layer and is joined to the ferromagnetic metal layer; and two via wires, each of which extends in a direction intersecting the spin-orbit torque wiring from a surface of the spin-orbit torque wiring opposite to a side with the ferromagnetic metal layer and is connected to a semiconductor circuit, wherein a via-to-via distance between the two via wires in the first direction is shorter than a width of the ferromagnetic metal layer in the first direction.Type: GrantFiled: January 19, 2022Date of Patent: November 28, 2023Assignee: TDK CORPORATIONInventors: Keita Suda, Tomoyuki Sasaki
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Publication number: 20230351150Abstract: A neural network arithmetic processing device is capable of implementing a further increase in speed and efficiency of multiply-accumulate arithmetic operation, suppressing an increase in circuit scale, and performing multiply-accumulate arithmetic operation with simple design. A neural network arithmetic processing device includes a first multiply-accumulate arithmetic unit, a register connected to the first multiply-accumulate arithmetic unit, and a second multiply-accumulate arithmetic unit connected to the register. The first multiply-accumulate arithmetic unit has a first memory, a second memory, a first multiplier, a first adder, and a first output unit. The second multiply-accumulate arithmetic unit has an input unit, a third memory, second multipliers, second adders, and second output units.Type: ApplicationFiled: May 19, 2023Publication date: November 2, 2023Applicant: TDK CORPORATIONInventor: Keita SUDA
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Patent number: 11681498Abstract: A neural network arithmetic processing device is capable of implementing a further increase in speed and efficiency of multiply-accumulate arithmetic operation, suppressing an increase in circuit scale, and performing multiply-accumulate arithmetic operation with simple design. A neural network arithmetic processing device includes a first multiply-accumulate arithmetic unit, a register connected to the first multiply-accumulate arithmetic unit, and a second multiply-accumulate arithmetic unit connected to the register. The first multiply-accumulate arithmetic unit has a first memory, a second memory, a first multiplier, a first adder, and a first output unit. The second multiply-accumulate arithmetic unit has an input unit, a third memory, second multipliers, second adders, and second output units.Type: GrantFiled: March 16, 2020Date of Patent: June 20, 2023Assignee: TDK CORPORATIONInventor: Keita Suda
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Publication number: 20220140231Abstract: A spin-orbit-torque magnetization rotational element includes: a ferromagnetic metal layer, a magnetization direction of the ferromagnetic metal layer being configured to change; a spin-orbit torque wiring which extends in the first direction intersecting a lamination direction of the ferromagnetic metal layer and is joined to the ferromagnetic metal layer; and two via wires, each of which extends in a direction intersecting the spin-orbit torque wiring from a surface of the spin-orbit torque wiring opposite to a side with the ferromagnetic metal layer and is connected to a semiconductor circuit, wherein a via-to-via distance between the two via wires in the first direction is shorter than a width of the ferromagnetic metal layer in the first direction.Type: ApplicationFiled: January 19, 2022Publication date: May 5, 2022Inventors: Keita SUDA, Tomoyuki SASAKI
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Patent number: 11264563Abstract: A spin-orbit-torque magnetization rotational element includes: a ferromagnetic metal layer, a magnetization direction of the ferromagnetic metal layer being configured to change; a spin-orbit torque wiring which extends in the first direction intersecting a lamination direction of the ferromagnetic metal layer and is joined to the ferromagnetic metal layer; and two via wires, each of which extends in a direction intersecting the spin-orbit torque wiring from a surface of the spin-orbit torque wiring opposite to a side with the ferromagnetic metal layer and is connected to a semiconductor circuit, wherein a via-to-via distance between the two via wires in the first direction is shorter than a width of the ferromagnetic metal layer in the first direction.Type: GrantFiled: August 31, 2018Date of Patent: March 1, 2022Assignee: TDK CORPORATIONInventors: Keita Suda, Tomoyuki Sasaki
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Publication number: 20210305498Abstract: Provided is a magnetoresistance effect element that suppresses re-adhesion of impurities during preparation and allows a write current to easily flow. The magnetoresistance effect element includes a first ferromagnetic layer, a second ferromagnetic layer; and a nonmagnetic layer interposed between the first ferromagnetic layer and the second ferromagnetic layer. In the magnetoresistance effect element, the nonmagnetic layer is a tunnel barrier layer constituted by an insulator, a side surface of the first ferromagnetic layer, a side surface of the second ferromagnetic layer and a side surface of the nonmagnetic layer form a continuous inclined surface in any side surface, and a thickness of inside the nonmagnetic layer is thicker than a thickness of outside the nonmagnetic layer.Type: ApplicationFiled: June 11, 2021Publication date: September 30, 2021Applicant: TDK CORPORATIONInventors: Tomoyuki SASAKI, Yohei SHIOKAWA, Eiji KOMURA, Keita SUDA
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Patent number: 11063210Abstract: Provided is a spin-orbit-torque magnetization rotational element that suppresses re-adhesion of impurities during preparation and allows a write current to easily flow. The spin-orbit-torque magnetization rotational element includes a spin-orbit torque wiring that extends in a first direction, and a first ferromagnetic layer that is located on a side of one surface of the spin-orbit torque wiring. A side surface of the spin-orbit torque wiring and a side surface of the first ferromagnetic layer form a continuous inclined surface in any side surface.Type: GrantFiled: April 9, 2020Date of Patent: July 13, 2021Assignee: TDK CORPORATIONInventors: Tomoyuki Sasaki, Yohei Shiokawa, Eiji Komura, Keita Suda
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Publication number: 20210083175Abstract: A spin-orbit-torque magnetization rotational element includes: a ferromagnetic metal layer, a magnetization direction of the ferromagnetic metal layer being configured to change; a spin-orbit torque wiring which extends in the first direction intersecting a lamination direction of the ferromagnetic metal layer and is joined to the ferromagnetic metal layer; and two via wires, each of which extends in a direction intersecting the spin-orbit torque wiring from a surface of the spin-orbit torque wiring opposite to a side with the ferromagnetic metal layer and is connected to a semiconductor circuit, wherein a via-to-via distance between the two via wires in the first direction is shorter than a width of the ferromagnetic metal layer in the first direction.Type: ApplicationFiled: August 31, 2018Publication date: March 18, 2021Applicant: TDK CORPORATIONInventors: Keita SUDA, Tomoyuki SASAKI
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Patent number: 10840002Abstract: Provided is a spin current magnetization rotational element including: a spin-orbit torque wiring that extends in a first direction and is configured to generate a spin current; a first ferromagnetic layer that is laminated in a second direction intersecting the spin-orbit torque wiring and is configured for magnetization direction to be changed; and a first perpendicular magnetic field applying layer that is disposed to be separated from the spin-orbit torque wiring and the first ferromagnetic layer, the first perpendicular magnetic field applying layer being configured to apply an assistant magnetic field assisting a magnetization rotation of the first ferromagnetic layer.Type: GrantFiled: August 13, 2018Date of Patent: November 17, 2020Assignee: TDK CORPORATIONInventors: Tomoyuki Sasaki, Yugo Ishitani, Keita Suda
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Publication number: 20200349419Abstract: A neural network arithmetic processing device is capable of implementing a further increase in speed and efficiency of multiply-accumulate arithmetic operation, suppressing an increase in circuit scale, and performing multiply-accumulate arithmetic operation with simple design. A neural network arithmetic processing device includes a first multiply-accumulate arithmetic unit, a register connected to the first multiply-accumulate arithmetic unit, and a second multiply-accumulate arithmetic unit connected to the register. The first multiply-accumulate arithmetic unit has a first memory, a second memory, a first multiplier, a first adder, and a first output unit. The second multiply-accumulate arithmetic unit has an input unit, a third memory, second multipliers, second adders, and second output units.Type: ApplicationFiled: March 16, 2020Publication date: November 5, 2020Applicant: TDK CORPORATIONInventor: Keita SUDA
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Publication number: 20200235290Abstract: Provided is a spin-orbit-torque magnetization rotational element that suppresses re-adhesion of impurities during preparation and allows a write current to easily flow. The spin-orbit-torque magnetization rotational element includes a spin-orbit torque wiring that extends in a first direction, and a first ferromagnetic layer that is located on a side of one surface of the spin-orbit torque wiring. A side surface of the spin-orbit torque wiring and a side surface of the first ferromagnetic layer form a continuous inclined surface in any side surface.Type: ApplicationFiled: April 9, 2020Publication date: July 23, 2020Applicant: TDK CORPORATIONInventors: Tomoyuki SASAKI, Yohei SHIOKAWA, Eiji KOMURA, Keita SUDA
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Patent number: 10644228Abstract: Provided is a spin-orbit-torque magnetization rotational element that suppresses re-adhesion of impurities during preparation and allows a write current to easily flow. The spin-orbit-torque magnetization rotational element includes a spin-orbit torque wiring that extends in a first direction, and a first ferromagnetic layer that is located on a side of one surface of the spin-orbit torque wiring. A side surface of the spin-orbit torque wiring and a side surface of the first ferromagnetic layer form a continuous inclined surface in any side surface.Type: GrantFiled: November 1, 2018Date of Patent: May 5, 2020Assignee: TDK CORPORATIONInventors: Tomoyuki Sasaki, Yohei Shiokawa, Eiji Komura, Keita Suda
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Publication number: 20190148629Abstract: Provided is a spin-orbit-torque magnetization rotational element that suppresses re-adhesion of impurities during preparation and allows a write current to easily flow. The spin-orbit-torque magnetization rotational element includes a spin-orbit torque wiring that extends in a first direction, and a first ferromagnetic layer that is located on a side of one surface of the spin-orbit torque wiring. A side surface of the spin-orbit torque wiring and a side surface of the first ferromagnetic layer form a continuous inclined surface in any side surface.Type: ApplicationFiled: November 1, 2018Publication date: May 16, 2019Applicant: TDK CORPORATIONInventors: Tomoyuki SASAKI, Yohei SHIOKAWA, Eiji KOMURA, Keita SUDA
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Publication number: 20190074123Abstract: Provided is a spin current magnetization rotational element including: a spin-orbit torque wiring that extends in a first direction and is configured to generate a spin current; a first ferromagnetic layer that is laminated in a second direction intersecting the spin-orbit torque wiring and is configured for magnetization direction to be changed; and a first perpendicular magnetic field applying layer that is disposed to be separated from the spin-orbit torque wiring and the first ferromagnetic layer, the first perpendicular magnetic field applying layer being configured to apply an assistant magnetic field assisting a magnetization rotation of the first ferromagnetic layer.Type: ApplicationFiled: August 13, 2018Publication date: March 7, 2019Applicant: TDK CORPORATIONInventors: Tomoyuki SASAKI, Yugo ISHITANI, Keita SUDA