Abstract: A negative electrode active material for a secondary battery includes composite particles. The composite particles include a lithium silicate phase and a silicon phase dispersed in the lithium silicate phase, wherein the silicon phase has lined portions in the lithium silicate phase, a maximum diameter D1 and a minimum diameter D2 of the lined portions satisfy 3?D1/D2. The composite particles include a metal Me dispersed in the lithium silicate phase, and the metal Me is at least one selected from the group consisting of Fe, Pb, Zn, Sn, Cu, Ni, Cr, Zr, and Ti.

Abstract: A vehicle wiper comprises a retainer that is formed in an elongated shape open at the lower side facing toward a windshield, and that is provided so as to be capable of swinging about a shaft axis of a pivot shaft that is swung to-and-fro; a first nozzle member that is housed inside the retainer, and that is capable of ejecting washer fluid from an ejection portion; and 1 a retainer cover member that closes off an opening of the retainer, and that is formed with a window through which the ejection portion of the first nozzle member is externally exposed.

Abstract: A wiper for a vehicle is provided with: an arm-side connection section; a blade-side connection section; support shafts which protrude from side walls of the blade-side connection section; and shaft support recesses which are provided in the arm-side connection section. When a wiper blade is located in a mounting-dismounting enabled region, the mounting-dismounting openings and the small-diameter sections of the support shafts match with each other, and the support shafts and the shaft support recesses can be mounted to and dismounted from each other. When the wiper blade is located in a mounting-dismounting disabled region, the mounting-dismounting openings and the small-diameter sections do not match with each other, and the support shafts and the shaft support recesses cannot be mounted to and dismounted from each other. A shape retaining section is located between the pair of the shaft support recesses.

Abstract: A vehicle wiper comprises a retainer that is formed in an elongated shape open at the lower side facing toward a windshield, and that is provided so as to be capable of swinging about a shaft axis of a pivot shaft that is swung to-and-fro; a first nozzle member that is housed inside the retainer, and that is capable of ejecting washer fluid from an ejection portion; and 1 a retainer cover member that closes off an opening of the retainer, and that is formed with a window through which the ejection portion of the first nozzle member is externally exposed.

Abstract: A wiper for a vehicle is provided with: an arm-side connection section; a blade-side connection section; support shafts which protrude from side walls of the blade-side connection section; and shaft support recesses which are provided in the arm-side connection section. When a wiper blade is located in a mounting-dismounting enabled region, the mounting-dismounting openings and the small-diameter sections of the support shafts match with each other, and the support shafts and the shaft support recesses can be mounted to and dismounted from each other. When the wiper blade is located in a mounting-dismounting disabled region, the mounting-dismounting openings and the small-diameter sections do not match with each other, and the support shafts and the shaft support recesses cannot be mounted to and dismounted from each other. A shape retaining section is located between the pair of the shaft support recesses.

Abstract: In a connecting member, a base member includes an installation portion, to which a hook of a wiper arm configured into a U-shape form is adapted to be installed after installation of the base member to a wiper blade. A lock member is rotatably connected to the base member and is adapted to be engaged with an arcuate outer peripheral surface of the hook after installation of the hook to the installation portion. The lock member includes an engaging portion, which is adapted to be engaged with the arcuate outer peripheral surface of the hook to exert a resilient force against the arcuate outer peripheral surface of the hook. The resilient force of the engaging portion is exerted as a rotational force in a locking direction of the lock member against the arcuate outer peripheral surface of the hook.

Abstract: In a connecting member, a base member includes an installation portion, to which a hook of a wiper arm configured into a U-shape form is adapted to be installed after installation of the base member to a wiper blade. A lock member is rotatably connected to the base member and is adapted to be engaged with an arcuate outer peripheral surface of the hook after installation of the hook to the installation portion. The lock member includes an engaging portion, which is adapted to be engaged with the arcuate outer peripheral surface of the hook to exert a resilient force against the arcuate outer peripheral surface of the hook. The resilient force of the engaging portion is exerted as a rotational force in a locking direction of the lock member against the arcuate outer peripheral surface of the hook.

Abstract: A semiconductor device includes a plurality of gate insulating films formed on a semiconductor substrate. Of the plurality of gate insulating films, the gate insulating film having a smallest thickness in an HP transistor formation region is a silicon oxide film, and each of the remaining gate insulating films in an I/O transistor formation region and an LP transistor formation region is a silicon oxynitride film.

Abstract: A semiconductor device includes: a first gate insulating film formed on a first nMOS transistor region in a semiconductor substrate; a second gate insulating film formed on a first pMOS transistor region in the substrate; a third gate insulating film formed on a second nMOS transistor region in the substrate; and a fourth gate insulating film formed on a second pMOS transistor region in the substrate. The first through fourth gate insulating films contain nitrogen. Each of the third and fourth gate insulating films has a thickness smaller than that of each of the first and second gate insulating films. The first gate insulating film has a nitrogen concentration peak at the interface between the first gate insulating film and the substrate. Each of the second, third and fourth gate insulating films has a nitrogen concentration peak only near an associated one of gate electrodes respectively formed thereon.

Abstract: During a manufacturing process for a semiconductor device, the size of gate electrodes is measured within the wafer surface. The gained measurement data is compared with the data which depends on the gate length-electrical properties of the semiconductor elements, and thus, distribution in the electrical properties within the wafer surface is expected. Next, the difference between the expected data on the electrical properties and the designed value is calculated, and this difference is compared with the data which depends on the temperature-electrical properties, so that the electrical property values a reconverted to temperature values. Next, the temperature distribution within the surface which makes inconsistency in said electrical properties within the surface minimal is determined from the gained data on the temperature distribution within the surface and the data on the temperature distribution within the surface which is gained from the equipment management data of the thermal annealing apparatus.

Abstract: An object of the present invention is to prevent a junction leakage current generation across a pn junction formed under a silicide layer, even when a direct probing to an electrode formed of the silicide layer is performed.

Abstract: A semiconductor device includes: a first gate insulating film formed on a first nMOS transistor region in a semiconductor substrate; a second gate insulating film formed on a first pMOS transistor region in the substrate; a third gate insulating film formed on a second nMOS transistor region in the substrate; and a fourth gate insulating film formed on a second pMOS transistor region in the substrate. The first through fourth gate insulating films contain nitrogen. Each of the third and fourth gate insulating films has a thickness smaller than that of each of the first and second gate insulating films. The first gate insulating film has a nitrogen concentration peak at the interface between the first gate insulating film and the substrate. Each of the second, third and fourth gate insulating films has a nitrogen concentration peak only near an associated one of gate electrodes respectively formed thereon.