Abstract: A W18O49 peak is confirmed by X-ray diffraction analysis of a sputtering surface and a cross section orthogonal to the sputtering surface, a ratio IS(103)/IS(010) of a diffraction intensity IS(103) of a (103) plane to a diffraction intensity IS(010) of a (010) plane of W18O49 of the sputtering surface is 0.38 or less, a ratio IC(103)/IC(010) of a diffraction intensity IC(103) of the (103) plane to a diffraction intensity IC(010) of the (010) plane of W18O49 of the cross section is 0.55 or more, and an area ratio of W18O49 phase of a surface parallel to the sputtering surface is 37% or more.

Abstract: A W18O49 peak is confirmed by X-ray diffraction analysis of a sputtering surface and a cross section orthogonal to the sputtering surface, a ratio IS(103)/IS(010) of a diffraction intensity IS(103) of a (103) plane to a diffraction intensity IS(010) of a (010) plane of W18O49 of the sputtering surface is 0.57 or more, a ratio IC(103)/IC(010) of a diffraction intensity IC(103) of the (103) plane to a diffraction intensity IC(010) of the (010) plane of W18O49 of the cross section is 0.38 or less, and an area ratio of the W18O49 phase of a surface parallel to the sputtering surface is 37% or more.

Abstract: The present invention provides a sputtering target having a composition containing 45 at % to 90 at % of In, and the remainder including Cu and inevitable impurities. An In single phase and a Cu11In9 compound phase exist, and an XRD peak ratio I(In)/I(Cu11In9) between the In single phase and the Cu11In9 compound phase is in a range of 0.01 to 3. The average grain size of the Cu11In9 compound phase is 150 ?m or less, the amount of oxygen is 500 mass ppm or less, and the theoretical density ratio is 85% or more.

Abstract: A Cu—Ga sputtering target of the present invention includes, as a composition of metal components, Ga in a range of 5 at % to 60 at %, at least one additive element selected from the group consisting of K, Rb, and Cs in a range of 0.01 at % to 5 at %, and a balance including Cu and inevitable impurities, in which all or a part of the additive element is present in a state of halide particles including at least one halogen selected from the group consisting of F, Cl, Br, and I, a maximum particle size of the halide particles is 15 ?m or less, and an oxygen concentration is 1000 mass ppm or less.

Abstract: A Cu—Ga binary alloy sputtering target having excellent mechanical workability, high density, and high bending strength, and a method of producing the sputtering target are provided. The sputtering target has a composition including 28 to 35 atomic % of Ga and the balance made of Cu and inevitable impurities. In addition, the sputtering target has a coexistence microstructure in which a low-Ga-containing Cu—Ga binary alloy phase is surrounded by a high-Ga-containing Cu—Ga binary alloy phase. The low-Ga-containing Cu—Ga binary alloy phase includes 26 atomic % or less of Ga and a balance made of Cu. The high-Ga-containing Cu—Ga binary alloy phase includes 28 atomic % or more of Ga.

Abstract: Provided is a sputtering target having a composition comprising: 5 at % or more and 60 at % or less of Ga, and 0.01 at % or more and 5 at % or less of alkali metal, as metal components; and a Cu balance including inevitable impurities, wherein a concentration of the alkali metal on a surface on a sputtering surface side is less than 80% of a concentration of the alkali metal inside the target.

Abstract: The present invention provides a sputtering target having a composition containing 45 at % to 90 at % of In, and the remainder including Cu and inevitable impurities. An In single phase and a Cu11In9 compound phase exist, and an XRD peak ratio I(In)/I(Cu11In9) between the In single phase and the Cu11In9 compound phase is in a range of 0.01 to 3. The average grain size of the Cu11In9 compound phase is 150 ?m or less, the amount of oxygen is 500 mass ppm or less, and the theoretical density ratio is 85% or more.

Abstract: Provided are a sputtering target which has excellent machinability and is capable of forming a compound film that mainly contains Cu and Ga and a method for producing the sputtering target. The sputtering target of the present invention has a component composition that contains 15 to 40 at % of Ga, 0.1 to 5 at % of Bi, and the balance composed of Cu and unavoidable impurities with respect to all metal elements in the sputtering target. The method for producing the sputtering target includes a step of melting at least Cu, Ga and Bi as simple substances or an alloy that contains two or more of these elements at 1,050° C. or higher to produce an ingot.

Abstract: A sputtering target consists of a sintered body having a component composition consisting of: Ga of 10 to 40 at. % and Na of 0.1 to 15 at. % as metal elements; and the balance being Cu and inevitable impurities. The sintered body contains the Na in a form of Na compounds consisting of at least one compound selected from the group consisting of sodium sulfate, sodium sulfite, sodium selenate, and sodium selenite, the sintered body has a composition in which a Na compound phase is dispersed, and an average grain size of the Na compound phase is 10 ?m or less.

Abstract: A sputtering target, which has a component composition including: 30.0-67.0 atomic % of Ga; and the Cu balance containing inevitable impurities, wherein the sputtering target is a sintered material having a structure in which ? phases made of Cu—Ga alloy are dispersed in a matrix of the ? phases made of Cu—Ga alloy, is provided.

Abstract: A Cu—Ga sputtering target made of a composition containing: as metal components excluding fluorine, 5 atomic % or more and 60 atomic % or less of Ga and 0.01 atomic % or more and 5 atomic % or less of K; and the Cu balance containing inevitable impurities is provided. In the Cu—Ga sputtering target, the Cu—Ga sputtering target has a region containing Cu, Ga, K, and F, in an atomic mapping image by a wavelength separation X-ray detector.

Abstract: A Cu—Ga alloy sputtering target includes, as a component composition, Ga: 0.1 to 40.0 at % and a balance including Cu and inevitable impurities, in which a porosity is 3.0% or lower, an average diameter of circumscribed circles of pores is 150 ?m or less, and an average crystal grain size of Cu—Ga alloy particles is 50 ?m or less.

Abstract: Provided is a sputtering target which contains Na in high concentration and, despite this, is inhibited from discoloration, generating spots, and causing abnormal electrical discharge and which has high strength and rarely breaks. Also provided is a method for producing the sputtering target. The sputtering target has a component composition that contains 10 to 40 at % of Ga and 1.0 to 15 at % of Na as metal element components other than F, S, and Se, with the remainder composed of Cu and unavoidable impurities, wherein the Na is contained in the form of at least one Na compound selected from sodium fluoride, sodium sulfide, and sodium selenide. The sputtering target has a theoretical density ratio of 90% or higher, a flexural strength of 100 N/mm2 or higher, and a bulk resistivity of 1 m?·cm or less. The number of 0.05 mm2 or larger aggregates of the at least one of sodium fluoride, sodium sulfide, and sodium selenide present per cm2 area of the target surface is 1 or less on average.

Abstract: A sputtering target, which has excellent mechanical workability; and makes it possible to deposit a film of a compound including Cu and Ga as major components, is provided. The sputtering target includes: with respect to an all of metal elements in the sputtering target, 15.0 to 50.0 atomic % of Ga; 0.1 to 10.0 total atomic % of one or more metal elements selected from Al, Zn, Sn, Ag, and Mg; and the Cu balance and inevitable impurities.

Abstract: A sputtering target consists of a sintered body having a component composition consisting of: Ga of 10 to 40 at. % and Na of 0.1 to 15 at. % as metal elements; and the balance being Cu and inevitable impurities. The sintered body contains the Na in a form of Na compounds consisting of at least one compound selected from the group consisting of sodium sulfate, sodium sulfite, sodium selenate, and sodium selenite, the sintered body has a composition in which a Na compound phase is dispersed, and an average grain size of the Na compound phase is 10 ?m or less.

Abstract: A Cu—Ga binary alloy sputtering target having excellent mechanical workability, high density, and high bending strength, and a method of producing the sputtering target are provided. The sputtering target has a composition including 28 to 35 atomic % of Ga and the balance made of Cu and inevitable impurities. In addition, the sputtering target has a coexistence microstructure in which a low-Ga-containing Cu—Ga binary alloy phase is surrounded by a high-Ga-containing Cu—Ga binary alloy phase. The low-Ga-containing Cu—Ga binary alloy phase includes 26 atomic % or less of Ga and a balance made of Cu. The high-Ga-containing Cu—Ga binary alloy phase includes 28 atomic % or more of Ga.

Abstract: The sputtering target has a component composition containing Ga: 2 to 30 at %, In: 15 to 45 at %, Na: 0.05 to 15 at % as metal components other than F, S and Se in the sputtering target and the remainder composed of Cu and inevitable impurities. The sputtering target has a composition in which a Na compound phase is dispersed, the Na is contained in the Na compound phase, a theoretical density ratio of the sintered body is 90% or more, a deflective strength is 60 N/mm2 or more, a bulk resistivity is 0.1 ?*cm or less, and the number of Na compound aggregates having a size of 0.05 mm2 or more contained in an area of 1 cm2 of a surface of the sputtering target is one or less on average.

Abstract: Provided is a sputtering target which contains Na in high concentration and, despite this, is inhibited from discoloration, generating spots, and causing abnormal electrical discharge and which has high strength and rarely breaks. Also provided is a method for producing the sputtering target. The sputtering target has a component composition that contains 10 to 40 at % of Ga and 1.0 to 15 at % of Na as metal element components other than F, S, and Se, with the remainder composed of Cu and unavoidable impurities, wherein the Na is contained in the form of at least one Na compound selected from sodium fluoride, sodium sulfide, and sodium selenide. The sputtering target has a theoretical density ratio of 90% or higher, a flexural strength of 100 N/mm2 or higher, and a bulk resistivity of 1 m?·cm or less. The number of 0.05 mm2 or larger aggregates of the at least one of sodium fluoride, sodium sulfide, and sodium selenide present per cm2 area of the target surface is 1 or less on average.

Abstract: Provided are a sputtering target which has excellent machinability and is capable of forming a compound film that mainly contains Cu and Ga and a method for producing the sputtering target. The sputtering target of the present invention has a component composition that contains 15 to 40 at % of Ga, 0.1 to 5 at % of Bi, and the balance composed of Cu and unavoidable impurities with respect to all metal elements in the sputtering target. The method for producing the sputtering target includes a step of melting at least Cu, Ga and Bi as simple substances or an alloy that contains two or more of these elements at 1,050° C. or higher to produce an ingot.