Abstract: A monitoring system (10) including: an information accumulation program (32) configured to accumulate position information of a user terminal (100) carried by a watched person, the position information being determined based on information uploaded from the user terminal; a living area determination program (33) configured to determine a living area of the watched person, based on position information accumulated in a predetermined period among pieces of the accumulated position information; a determination program (37) configured to determine a positional relationship between a position of the user terminal, which is determined based on the position information of the first terminal, and the living area; and a notification program (28) configured to notify a guardian terminal (209) of a determination result.

Abstract: A dresser is enabled to adjust a swing speed in scanning areas set on a polishing member along a swing direction. A surface height of the polishing member in monitoring areas set in advance on the polishing member along the swing direction of the dresser is measured. A dress model matrix defined from the monitoring areas, the scanning areas and a dress model is created. Height profile predicted value is calculated using the dress model and the swing speed in each scanning area or a staying time. Evaluation index is set based on a difference from a target value of a height profile of the polishing member and a step of setting the swing speed in each scanning area of the dresser based on the evaluation index. At least one of parameters to determine the target value or the evaluation index of the height profile is made to change automatically.

Abstract: A substrate processing apparatus includes a polishing head defining plural pressure chambers D1 to D5 for pressing a wafer W on a polishing pad 42, a pressure control unit performing pressure feedback control by individually controlling pressures in the pressure chambers D1 to D5, a film thickness measurement unit measuring a film thickness distribution of the wafer W being polished, a storage unit storing multiple pieces of information on a preset pressure of the pressure chambers D1 to D5, and a response characteristic acquisition unit changing the preset pressure every time a predetermined condition is satisfied during polishing of the wafer W, measuring a polishing rate applied to the wafer W, and acquiring a response characteristic of the polishing of the wafer W. The response characteristic indicates responsiveness of the polishing of the wafer W to the pressure feedback. The response characteristic is acquired based on the obtained polishing rates.

Abstract: A start-up device is a start-up device of a power storage device having a power storage. The power storage device includes a switching controller configured to switch between a started-up state in which electric power of the power storage can be output to outside of the power storage device or in which electric power outside of the power storage device can be input to the power storage and a non-started-up state in which electric power of the power storage cannot be output to the outside of the power storage device and in which electric power outside of the power storage device cannot be input to the power storage. The start-up device includes a power source part provided outside of the power storage device and electrically connectable to the switching controller.

Abstract: To measure thickness in a polishing treatment more efficiently. A substrate polishing apparatus comprises a rotatably configured polishing table provided with a sensor that outputs a signal related to a thickness, a rotatably configured polishing head that faces the polishing table, a substrate being attachable to a face of the polishing head that faces the polishing table, and a controller. The controller acquires a signal from the sensor when the sensor passes over a surface to be polished of the substrate, specifies an orbit of the sensor with respect to the substrate on a basis of a profile of the signal, calculates a thickness of the substrate at each point on the orbit on a basis of the signal, and creates a thickness map on a basis of the calculated thickness at each point on a plurality of orbits of the sensor.

Abstract: A substrate polishing method capable of reducing an influence of variation in spectrum of reflected light from a substrate, such as a wafer, and determining an accurate film thickness is disclosed. The method includes: polishing a surface of a substrate by pressing the substrate against a polishing pad on a rotating polishing table; producing a spectrum of reflected light from the surface of the substrate each time the polishing table makes one rotation; creating a three-dimensional data containing a plurality of spectra arranged along polishing time; and determining a film thickness of the substrate based on the three-dimensional data.

Abstract: A substrate polishing method capable of reducing an influence of variation in spectrum of reflected light from a substrate, such as a wafer, and determining an accurate film thickness is disclosed. The method includes: polishing a surface of a substrate by pressing the substrate against a polishing pad on a rotating polishing table; producing a spectrum of reflected light from the surface of the substrate each time the polishing table makes one rotation; creating a three-dimensional data containing a plurality of spectra arranged along polishing time; and determining a film thickness of the substrate based on the three-dimensional data.

Abstract: A communication system includes a traveling cart, a wireless base station, and a communication manager. A cart controller of the traveling cart configured or programmed to transmit traveling position information indicating the traveling position of the traveling cart to the wireless base station via a cart wireless communicator. A controller of the communication manager is configured or programmed to acquire at least one recommended transmission rate from a transmission rate table stored in a storage based on the traveling position information of the traveling cart received by wired communication with the wireless base station, and generate transmission rate information. The controller is configured or programmed to transmit the transmission rate information and management side transmission information to transmit to the traveling cart to the wireless base station via a communicator.

Abstract: A dresser is enabled to adjust a swing speed in scanning areas set on a polishing member along a swing direction. A surface height of the polishing member in monitoring areas set in advance on the polishing member along the swing direction of the dresser is measured. A dress model matrix defined from the monitoring areas, the scanning areas and a dress model is created. Height profile predicted value is calculated using the dress model and the swing speed in each scanning area or a staying time. Evaluation index is set based on a difference from a target value of a height profile of the polishing member and a step of setting the swing speed in each scanning area of the dresser based on the evaluation index. At least one of parameters to determine the target value or the evaluation index of the height profile is made to change automatically.

Abstract: An object of the present invention is to improve a substrate processing apparatus using the CARE method. The present invention provides a substrate processing apparatus for polishing a processing target region of a substrate by bringing the substrate and a catalyst into contact with each other in the presence of processing liquid. The substrate processing apparatus includes a substrate holding unit configured to hold the substrate, a catalyst holding unit configured to hold the catalyst, and a driving unit configured to move the substrate holding unit and the catalyst holding unit relative to each other with the processing target region of the substrate and the catalyst kept in contact with each other. The catalyst is smaller than the substrate.

Abstract: A polishing apparatus capable of obtaining a desired film thickness profile is disclosed. The polishing apparatus includes: a polishing unit; a film thickness measuring device for measuring a film thickness profile of a substrate; and a controller for controlling at least operations of the polishing unit and the film thickness measuring device. The controller stores in advance a response model which is created by taking into consideration variation in an amount of polishing between monitored areas of the substrate due to variations in a pressure of a pressurized fluid supplied to each of pressure chambers.

Abstract: A polishing method capable of improving a spatial resolution of a film-thickness measurement without changing a measuring cycle of a film-thickness sensor and without increasing an amount of measurement data is disclosed.

Abstract: A method of producing a model capable of reducing an influence of spectral variation of reflected light from a workpiece, such as a wafer, and capable of determining an accurate film thickness is disclosed. The method includes: determining sample features representing features of sample spectra of reflected lights from a sample having a film; obtaining similarities by calculating a similarity between each of the sample spectra and a representative spectrum; and producing a film-thickness estimation model by performing machine leaning using training data including the sample features, the similarities, and film thicknesses corresponding to the sample spectra.

Abstract: A dresser is enabled to adjust a swing speed in scanning areas set on a polishing member along a swing direction. A surface height of the polishing member in monitoring areas set in advance on the polishing member along the swing direction of the dresser is measured. A dress model matrix defined from the monitoring areas, the scanning areas and a dress model is created. Height profile predicted value is calculated using the dress model and the swing speed in each scanning area or a staying time. Evaluation index is set based on a difference from a target value of a height profile of the polishing member and a step of setting the swing speed in each scanning area of the dresser based on the evaluation index. At least one of parameters to determine the target value or the evaluation index of the height profile is made to change automatically.

Abstract: An object of the present invention is to improve a substrate processing apparatus using the CARE method. The present invention provides a substrate processing apparatus for polishing a processing target region of a substrate by bringing the substrate and a catalyst into contact with each other in the presence of processing liquid. The substrate processing apparatus includes a substrate holding unit configured to hold the substrate, a catalyst holding unit configured to hold the catalyst, and a driving unit configured to move the substrate holding unit and the catalyst holding unit relative to each other with the processing target region of the substrate and the catalyst kept in contact with each other. The catalyst is smaller than the substrate.

Abstract: In a vehicle cam damper structure, a drive shaft includes a cam damper at a midway portion thereof. The cam damper integrates a cam reception portion with a cam via a shaft member. The cam reception portion is connected relatively rotatably with the shaft member. The cam and the shaft member, while being integrally rotatable, are connected with each other axially slidably. The shaft member includes an enlarged-diameter portion. An elastic member that presses the cam toward a side of the cam reception portion is disposed between the enlarged-diameter portion and the cam. An outer cylinder extends across the cam reception portion and the shaft member. A drive-side shaft and a driven-side shaft of the drive shaft are each connected with corresponding one of the cam reception portion and the shaft member.

Abstract: A polishing method which can acquire an actual position of a film-thickness measurement point, and can therefore apply an optimum polishing pressure to a substrate such as a wafer is disclosed. The method includes: causing a substrate detection sensor to generate substrate detection signals in a preset cycle and causing a film-thickness sensor to generate a film-thickness signal at a predetermined measurement point during polishing of the substrate while the substrate detection sensor and the film-thickness sensor are moving across the surface of the substrate; calculating an angle of eccentricity of a center of the substrate relative to a center of the polishing head from the number of substrate detection signals; correcting a position of the predetermined measurement point based on the angle of eccentricity; and controlling polishing pressure at which the polishing head presses the substrate based on the film-thickness signal and the corrected position of the predetermined measurement point.

Abstract: A substrate processing apparatus that polishes a substrate by sliding the substrate on a polishing member, the substrate processing apparatus including a dresser that dresses the polishing member by swinging on the polishing member, the dresser being enabled to adjust a swing speed in a plurality of scanning areas set on the polishing member along a radial direction, a height detection section that measures a surface height of the polishing member along the radial direction of the polishing member and thereby generates a pad profile, a dresser load setting section that sets a dresser load to be applied by the dresser to the polishing member, a pad height correction section that calculates an amount of correction of the surface height of the polishing member according to an amount of variation from a reference load of the dresser load over the radial direction, corrects the measured value of the surface height with the amount of correction and thereby corrects the pad profile, and a moving speed calculation se

Abstract: A monitoring system (10) including: an information accumulation program (32) configured to accumulate position information of a user terminal (100) carried by a watched person, the position information being determined based on information uploaded from the user terminal; a living area determination program (33) configured to determine a living area of the watched person, based on position information accumulated in a predetermined period among pieces of the accumulated position information; a determination program (37) configured to determine a positional relationship between a position of the user terminal, which is determined based on the position information of the first terminal, and the living area; and a notification program (28) configured to notify a guardian terminal (209) of a determination result.

Abstract: A polishing method capable of measuring a film thickness of a substrate, such as a semiconductor wafer, having various structural elements on its surface with high accuracy is disclosed. The polishing method includes: generating spectra of reflected lights from measurement points on a substrate; classifying the spectra based on a shape of each spectrum into primary spectra belonging to a first group and a secondary spectrum belonging to a second group; determining film thicknesses of the substrate from the primary spectra; and determining a film thickness at a measurement point corresponding to the secondary spectrum using the primary spectra or the film thicknesses.