Abstract: A battery housing structure capable of more effectively detecting expansion of a battery is provided. A battery housing structure according to the present invention includes a housing body of a battery, and the housing body has different ease of deformation with respect to expansion of the battery on a first main surface side of the battery and on a second main surface side of the battery.

Abstract: A first dressing of dressing a polishing member is performed under a plurality of preset set dress conditions, a first cut rate of the polishing member is measured based on a measurement value of a surface height of the polishing member for each set dress condition, and the set dress condition and the first cut rate are associated with each other and stored as relationship data. The substrate is polished by applying a first dress condition corresponding to a target cut rate based on the relationship data, and a second cut rate of the polishing member is measured based on the measurement value of the surface height of polishing member. A second dress condition corresponding to the target cut rate is acquired based on a change of the second cut rate from the target cut rate and the relationship data, and substrate is polished by applying the second dress condition.

Abstract: To provide an information processing terminal, an information processing method, and an information processing program highly convenient in contribution. An information processing terminal including a first acquirer that acquires first designation information for designating voice data to be contributed from one or more voice data, and a contributor that contributes the voice data designated by the first designation information acquired by the first acquirer.

Abstract: To provide an information processing terminal, an information processing apparatus, an information processing method, and an information processing program with high convenience. An information processing terminal according to the present invention includes: a receiver configured to receive data and a setting instruction for setting a notification pattern when notifying that the data has been received from a different terminal; a notifier configured to notify that the receiver has received the data; and a setting module configured to set a notification pattern of the notifier based on the setting instruction.

Abstract: Provided is a film thickness signal processing apparatus that improves in accuracy of a film-thickness distribution within a measurement range. The film thickness signal processing apparatus includes a receiver and a corrector. The receiver receives sensor data output from an eddy current sensor and generates first film thickness data 168 and second film thickness data 172. The corrector corrects the first film thickness data 168 and the second film thickness data 172 generated by the receiver. The corrector obtains corrected film thickness data 166 based on a size of the measurement range 174, 176 on the polishing object as a measurement target in a single measurement by the eddy current sensor, the first film thickness data 168 measured at a first measurement point 146 on the polishing object, and the second film thickness data 172 measured at a second measurement point 148 on the polishing object.

Abstract: A polishing method includes: during polishing of the workpiece, creating a reference spectrum history and a monitoring spectrum history by repeatedly producing a reference spectrum and a monitoring spectrum at two points on the workpiece; calculating a plurality of reference history differences that are differences between a latest monitoring spectrum and a plurality of reference spectra in the reference spectrum history; calculating a plurality of monitoring history differences that are differences between a latest reference spectrum and a plurality of monitoring spectra in the monitoring spectrum history; calculating a film-thickness difference between a monitoring point and a reference point based on a local minimum point of a reference history difference or a monitoring history difference.

Abstract: Provided is a film thickness measurement device, including: a head that holds a substrate to be polished and is capable of moving the substrate, a stage made of transparent material; a liquid supply unit configured to supply liquid onto the stage; a liquid discharge unit configured to discharge the liquid on the stage to the outside; a measurement unit configured to be placed on a side opposite to the head across the stage and to optically measure a film thickness on a surface of the substrate that is placed across the stage; and a control unit configured to move at least one of the stage and the head toward the other, and to irradiate the substrate with light while the surface of the substrate is immersed in the liquid, thereby performing film thickness measurement.

Abstract: An object of the present invention is to improve a substrate processing apparatus using the CARE method. The present invention provides a substrate processing apparatus for polishing a processing target region of a substrate by bringing the substrate and a catalyst into contact with each other in the presence of processing liquid. The substrate processing apparatus includes a substrate holding unit configured to hold the substrate, a catalyst holding unit configured to hold the catalyst, and a driving unit configured to move the substrate holding unit and the catalyst holding unit relative to each other with the processing target region of the substrate and the catalyst kept in contact with each other. The catalyst is smaller than the substrate.

Abstract: A monitoring system (10) including: an information accumulation program (32) configured to accumulate position information of a user terminal (100) carried by a watched person, the position information being determined based on information uploaded from the user terminal; a living area determination program (33) configured to determine a living area of the watched person, based on position information accumulated in a predetermined period among pieces of the accumulated position information; a determination program (37) configured to determine a positional relationship between a position of the user terminal, which is determined based on the position information of the first terminal, and the living area; and a notification program (28) configured to notify a guardian terminal (209) of a determination result.

Abstract: The present invention relates to a technique of calculating a responsiveness of a polishing rate to change in a pressure to press a workpiece, such as a wafer, a substrate, or a panel, for use in manufacturing of semiconductor devices, against a polishing pad. A method includes: performing simulation to calculate a pressing-pressure responsiveness profile indicating a distribution of pressing pressure, which is to be applied from the workpiece to a polishing pad (2), changed in response to a change in unit pressure in the pressure chamber of a polishing head (7); pressing the workpiece against the polishing pad to polish the workpiece, while a predetermined pressure is maintained in the pressure chamber; creating a polishing-rate profile indicating a distribution of polishing rate of the polished workpiece; and creating the polishing-rate responsiveness profile based on the pressing-pressure responsiveness profile, the predetermined pressure, and the polishing-rate profile.

Abstract: A substrate polishing device includes a height detection unit configured to measure a surface height of a polishing member, and a cutting rate calculation unit configured to calculate a cutting rate of the polishing member based on the surface height. The cutting rate calculation unit corrects the current cutting rate based on the cutting rate calculated in the past when the calculated current cutting rate falls outside a search range.

Abstract: An object of the present disclosure is to more appropriately control the moving speed of a dresser. A substrate polishing apparatus includes a dresser that moves in a plurality of scan areas set on a polishing member, and a moving speed calculation unit that calculates a moving speed of the dresser in each of the scan areas based on an evaluation index including a deviation from a stay time of the dresser in each of the scan areas on a basis of a previous recipe.

Abstract: A polishing apparatus that polishes a substrate includes a polishing table for holding a polishing pad and a polishing head configured to press a surface of the substrate against the polishing pad. A plurality of first optical heads detect a signal concerning a film thickness of the substrate while moving across the substrate. One spectrometer receives and processes signals output by at least two first sensor heads among the plurality of first sensor heads. An optical switch selectively connects the sensor heads to the spectrometer. A processor controls the optical switch to switch, at timing when the plurality of sensor heads simultaneously face the substrate, the connection to the spectrometer from one sensor head to another sensor head.

Abstract: A method capable of accurately obtaining polishing-rate responsiveness to a change in pressure for pressing a workpiece, such as a wafer, against a polishing pad is disclosed. The method includes: creating an estimated polishing-rate responsiveness profile using simulation, the estimated polishing-rate responsiveness profile indicating a distribution of polishing-rate responsiveness to pressure change in the first pressure chamber; creating an actual polishing-rate responsiveness profile using polishing results of a workpiece, the actual polishing-rate responsiveness profile indicating a distribution of polishing-rate responsiveness to pressure change in the second pressure chamber, and creating a hybrid polishing-rate responsiveness profile by combining the estimated polishing-rate responsiveness profile and the actual polishing-rate responsiveness profile.

Abstract: The present application relates to a polishing method and a polishing apparatus for polishing a substrate, such as a wafer, while pressing the substrate against a polishing surface of a polishing pad, and more particularly to a polishing method and a polishing apparatus for polishing a substrate while regulating a polishing load based on measurement values of a film-thickness measuring device. The polishing method includes: controlling a temperature of a polishing surface of a polishing pad to a predetermined temperature by use of a pad-temperature regulating apparatus; and polishing a substrate while controlling a polishing load for pressing the substrate against the polishing surface based on measurement values from a film-thickness measuring device provided in the polishing pad.

Abstract: In an electric power device and a method for controlling the same, a first circuit is electrically connected to a first battery tray and a second battery tray, a second circuit is electrically connected to the first battery tray, and a third circuit is electrically connected to the second battery tray. Between the first circuit and the second circuit, a first resistor unit is connected in series with the first battery tray, and a first interrupting unit is connected in parallel with the first resistor unit. Between the first circuit and the third circuit, a second resistor unit is connected in series with the second battery tray, and a second interrupting unit is connected in parallel with the second resistor unit.

Abstract: A monitoring system (10) including: an information accumulation program (32) configured to accumulate position information of a user terminal (100) carried by a watched person, the position information being determined based on information uploaded from the user terminal; a living area determination program (33) configured to determine a living area of the watched person, based on position information accumulated in a predetermined period among pieces of the accumulated position information; a determination program (37) configured to determine a positional relationship between a position of the user terminal, which is determined based on the position information of the first terminal, and the living area; and a notification program (28) configured to notify a guardian terminal (209) of a determination result.

Abstract: A dresser is enabled to adjust a swing speed in scanning areas set on a polishing member along a swing direction. A surface height of the polishing member in monitoring areas set in advance on the polishing member along the swing direction of the dresser is measured. A dress model matrix defined from the monitoring areas, the scanning areas and a dress model is created. Height profile predicted value is calculated using the dress model and the swing speed in each scanning area or a staying time. Evaluation index is set based on a difference from a target value of a height profile of the polishing member and a step of setting the swing speed in each scanning area of the dresser based on the evaluation index. At least one of parameters to determine the target value or the evaluation index of the height profile is made to change automatically.

Abstract: A substrate processing apparatus includes a polishing head defining plural pressure chambers D1 to D5 for pressing a wafer W on a polishing pad 42, a pressure control unit performing pressure feedback control by individually controlling pressures in the pressure chambers D1 to D5, a film thickness measurement unit measuring a film thickness distribution of the wafer W being polished, a storage unit storing multiple pieces of information on a preset pressure of the pressure chambers D1 to D5, and a response characteristic acquisition unit changing the preset pressure every time a predetermined condition is satisfied during polishing of the wafer W, measuring a polishing rate applied to the wafer W, and acquiring a response characteristic of the polishing of the wafer W. The response characteristic indicates responsiveness of the polishing of the wafer W to the pressure feedback. The response characteristic is acquired based on the obtained polishing rates.