Patents by Inventor Keitaro Endo

Keitaro Endo has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Memory element and memory device
    Patent number: 7696511
    Abstract: A memory element having a storage layer containing an ion source layer between a first electrode and a second electrode is provided. The memory element stores information by changing an electrical characteristic of the storage layer, wherein at least Zr is added to the ion source layer as a metal element together with an ion conducting material.
    Type: Grant
    Filed: August 5, 2008
    Date of Patent: April 13, 2010
    Assignee: Sony Corporation
    Inventors: Kazuhiro Ohba, Tetsuya Mizuguchi, Takeyuki Sone, Keitaro Endo
  • MEMORY ELEMENT AND MEMORY DEVICE
    Publication number: 20090039337
    Abstract: A memory element having a storage layer containing an ion source layer between a first electrode and a second electrode is provided. The memory element stores information by changing an electrical characteristic of the storage layer, wherein at least Zr is added to the ion source layer as a metal element together with an ion conducting material.
    Type: Application
    Filed: August 5, 2008
    Publication date: February 12, 2009
    Applicant: SONY CORPORATION
    Inventors: Kazuhiro Ohba, Tetsuya Mizuguchi, Takeyuki Sone, Keitaro Endo
  • Magnetoresistive effect element, magnetic memory element magnetic memory device and manufacturing methods thereof
    Patent number: 7262064
    Abstract: In a magnetoresistive effect element using a ferromagnetic tunnel junction having a tunnel barrier layer sandwiched between at least a pair of ferromagnetic layers, a magnetization free layer comprising one of the ferromagnetic layers is composed of a single layer of a material having an amorphous or microcrystal structure or a material layer the main portion of which has an amorphous or microcrystal structure. The magnetoresistive effect element can produce excellent magnetic-resistance characteristics, and a magnetic memory element and a magnetic memory device using the magnetoresistive effect element as a memory element thereof can improve both of write and read characteristics at the same time.
    Type: Grant
    Filed: October 11, 2002
    Date of Patent: August 28, 2007
    Assignee: Sony Corporation
    Inventors: Kazuhiro Ohba, Kazuhiko Hayashi, Hiroshi Kano, Kazuhiro Bessho, Tetsuya Mizuguchi, Yutaka Higo, Masanori Hosomi, Tetsuya Yamamoto, Hiroaki Narisawa, Takeyuki Sone, Keitaro Endo, Shinya Kubo
  • Magnetoresistive effect element, magnetic memory element magnetic memory device and manufacturing methods thereof
    Publication number: 20040257719
    Abstract: In a magnetoresistive effect element using a ferromagnetic tunnel junction having a tunnel barrier layer sandwiched between at least a pair of ferromagnetic layers, a magnetization free layer comprising one of the ferromagnetic layers is composed of a single layer of a material having an amorphous or microcrystal structure or a material layer the main portion of which has an amorphous or microcrystal structure. The magnetoresistive effect element can produce excellent magnetic-resistance characteristics, and a magnetic memory element and a magnetic memory device using the magnetoresistive effect element as a memory element thereof can improve both of write and read characteristics at the same time.
    Type: Application
    Filed: April 9, 2004
    Publication date: December 23, 2004
    Inventors: Kazuhiro Ohba, Kazuhiko Hayashi, Hiroshi Kano, Kazuhiro Bessho, Tetsuya Mizuguchi, Yutaka Higo, Masanori Hosomi, Tetsuya Yamamoto, Hiroaki Narisawa, Takeyuki Sone, Keitaro Endo, Shinya Kubo
  • Manufacturing method of magnetic memory device
    Patent number: 6572917
    Abstract: A manufacturing method of a magnetic memory device, wherein the inventive method does not require any special technique for forming pattern, but bilaterally ensures precision for processing a tunnel magneto-resistive effect element (called TMR element) and self-matching formation of connecting elements. The manufacturing method of a magnetic memory device comprises a processing step of forming a tunnel magneto-resistive effect film sandwiching a tunnel barrier layer between a magnetic pinned layer and a memory layer into a predetermined elementary configuration by applying a mask layer, wherein the mask layer is formed by applying a plating process.
    Type: Grant
    Filed: July 3, 2002
    Date of Patent: June 3, 2003
    Assignee: Sony Corporation
    Inventors: Hiroaki Narisawa, Keitaro Endo, Shinya Kubo
  • Manufacturing method of magnetic memory device
    Publication number: 20030026894
    Abstract: A manufacturing method of a magnetic memory device, wherein the inventive method does not require any special technique for forming pattern, but bilaterally ensures precision for processing a tunnel magneto-resistive effect element (called TMR element) and self-matching formation of connecting elements. The manufacturing method of a magnetic memory device comprises a processing step of forming a tunnel magneto-resistive effect film sandwiching a tunnel barrier layer between a magnetic pinned layer and a memory layer into a predetermined elementary configuration by applying a mask layer, wherein the mask layer is formed by applying a plating process.
    Type: Application
    Filed: July 3, 2002
    Publication date: February 6, 2003
    Inventors: Hiroaki Narisawa, Keitaro Endo, Shinya Kubo