Abstract: A thermally conductive pipe includes a pipe of which both end portions are closed, a working liquid that is sealed inside the pipe and vaporizes and liquefies, and a liquid transfer unit that exists along a longitudinal direction inside the pipe and transfers the liquefied working liquid at least in the longitudinal direction, in which the liquid transfer unit has, in a case of being viewed in a cross section of the pipe, which is orthogonal to the longitudinal direction, a first liquid transfer unit that is in contact with at least a partial range of an inner wall surface of the pipe and a second liquid transfer unit that is not in contact with the inner wall surface of the pipe and the first liquid transfer unit.

Abstract: A heat pipe includes a tubular member that is a hollow member in which liquid is encapsulated and of which an inner surface is subjected to an oxidation treatment in advance and a movement section that moves the liquid encapsulated and liquefied in the tubular member along a longitudinal direction of the tubular member by means of a capillary phenomenon and of which a surface is subjected to an oxidation treatment in advance.

Abstract: A fixing device includes a belt member that cyclically moves, a pressing unit that comes into contact with the belt member and presses a recording medium moving between the belt member and the pressing unit, and a heat source that includes a base material, a resistance heating element disposed on a surface of the base material along a longitudinal direction of the base material, and an insulator covering the resistance heating element and that comes into contact with the pressing unit via the belt member to heat an inner surface of the belt member, in which the insulator is formed to cover a corner portion of the base material in a direction of movement of the belt member.

Abstract: A semiconductor device includes a substrate and a transistor. The transistor has a first diffusion region and a second diffusion region provided in the substrate, a gate insulating film provided over the substrate between the first diffusion region and the second diffusion region, and a gate electrode positioned on the gate insulating film. The semiconductor device further includes an internal layer positioned in the substrate, wherein the internal layer has a first concentration of germanium and carbon higher than a second concentration of germanium and carbon of a region between the first diffusion region and the second diffusion region.

Abstract: The efficiency of development of an application program constructed of a plurality of application windows utilizing GUI controls is improved. By causing a GUI control property defining information selector to select GUI control property defining information defined by a GUI control property defining information definer, the selected GUI control property defining information is reflected upon the property of a GUI control used in an application window editor. When the GUI control property defining information is changed by the GUI control property defining information definer, GUI control information in synchronism with the changed GUI control property defining information is searched from GUI control information used in the application window editor and GUI control property defining information after changing is reflected upon the searched GUI control property information.