Abstract: A power semiconductor device according to the present disclosure includes, in the following order, a conductor plate, an insulator, a lead frame, a first mold package including a plurality of semiconductor elements provided on the lead frame inside thereof, and resin-sealed such that a main surface of the conductor plate opposite to a side on which the insulator is provided is exposed, and a second mold package in which the first mold package is resin-sealed such that the main surface is exposed, in which the lead frame has a plurality of terminals protruding from one side surface of the first mold package, the plurality of terminals are projecting from a front surface of the second mold package opposite to the conductor plate, and the plurality of terminals are alternately arranged to form a staggered pattern closer to one side of the front surface in plan view.

Abstract: The present invention relates to a plasma CVD device provided with a vacuum chamber, and a plasma CVD electrode unit and a substrate-holding mechanism inside the vacuum chamber. The plasma CVD electrode unit is provided with an anode, a cathode that faces the anode at a distance, and a first gas supply nozzle for supplying gas so as to pass through the plasma-generation space between the anode and cathode. The substrate-holding mechanism is disposed at a position where the gas passing through the plasma-generation space impinges. The length of the anode in the gas-supply direction and the length of the cathode in the gas-supply direction are both longer than the distance between the anode and the cathode. Thus, a plasma CVD device that makes it possible to increase gas decomposition efficiency and achieve high film deposition rate is provided.

Abstract: A plasma CVD device comprises a vacuum vessel that houses a discharge electrode plate and a ground electrode plate to which is attached a substrate for thin film formation. The plasma CVD device has an earth cover at an interval from and facing the aforementioned discharge electrode plate; the aforementioned discharge electrode plate has gas inlets and exhaust outlets (which expel gas introduced through said gas inlets) that are connected at one end to equipment supplying raw gas for thin film formation and that open at the other end at the bottom face of the aforementioned discharge electrode plate; the aforementioned earth cover has second gas inlets corresponding to the aforementioned gas inlets, and second exhaust outlets corresponding to the aforementioned exhaust outlets. The plasma CVD device has an electric potential control plate disposed at an interval from and facing the aforementioned ground cover.

Abstract: A plasma CVD apparatus comprising a vacuum chamber, and a main roll and a plasma generation electrode in the vacuum chamber, wherein a thin film is formed on a surface of a long substrate which is conveyed along the surface of the main roll is provided. At least one side wall extending in transverse direction of the long substrate is provided on each of the upstream and downstream sides in the machine direction of the long substrate, and the side walls surrounds the film deposition space between the main roll and the plasma generation electrode. The side walls are electrically insulated from the plasma generation electrode. The side wall on either the upstream or the downstream side in the machine direction of the long substrate is provided with at least one raw of gas supply holes formed by gas supply holes aligned in the transverse direction of the long substrate.

Abstract: Disclosed is a plasma processing apparatus, wherein a plasma-generating electrode has a plurality of gas exhaust holes which run through the plasma-generating electrode from the surface facing a substrate held by a substrate-holding mechanism, and reach a gas exhaust chamber; gas-feeding pipes, provided connected to a gas-introducing pipe, have gas-feeding ports for discharging source gas toward the inside of the plurality of gas exhaust holes; and the gas-feeding pipes and the gas-feeding ports are arranged in a manner such that extended lines, representing the direction of the flow of the source gas discharged from the gas-feeding ports, intersect the end surface open regions at the interface of the gas exhaust chamber to the gas exhaust holes. Also disclosed is a method of producing the amorphous silicon thin film using the plasma processing apparatus.

Abstract: A plasma CVD device comprises a vacuum vessel that houses a discharge electrode plate and a ground electrode plate to which is attached a substrate for thin film formation. The plasma CVD device has an earth cover at an interval from and facing the aforementioned discharge electrode plate; the aforementioned discharge electrode plate has gas inlets and exhaust outlets (which expel gas introduced through said gas inlets) that are connected at one end to equipment supplying raw gas for thin film formation and that open at the other end at the bottom face of the aforementioned discharge electrode plate; the aforementioned earth cover has second gas inlets corresponding to the aforementioned gas inlets, and second exhaust outlets corresponding to the aforementioned exhaust outlets. The plasma CVD device has an electric potential control plate disposed at an interval from and facing the aforementioned ground cover.

Abstract: Disclosed is a plasma processing apparatus, wherein a plasma-generating electrode has a plurality of gas exhaust holes which run through the plasma-generating electrode from the surface facing a substrate held by a substrate-holding mechanism, and reach a gas exhaust chamber; gas-feeding pipes, provided connected to a gas-introducing pipe, have gas-feeding ports for discharging source gas toward the inside of the plurality of gas exhaust holes; and the gas-feeding pipes and the gas-feeding ports are arranged in a manner such that extended lines, representing the direction of the flow of the source gas discharged from the gas-feeding ports, intersect the end surface open regions at the interface of the gas exhaust chamber to the gas exhaust holes. Also disclosed is a method of producing the amorphous silicon thin film using the plasma processing apparatus.

Abstract: The present invention aims to provide a transparent electromagnetic wave shield member, which is free from a moirè phenomenon which could not be solved by the prior art, and in which an excellent electromagnetic wave shielding properties and a sufficient total light transmittance based on an appropriate network structure are compatible, and a method for manufacturing the same. The transparent electromagnetic wave shield member of the present invention is a transparent electromagnetic wave shield member in which a metal layer of an electroconductive metal network structure having a geometrical shape is formed on a transparent substrate, and which is characterized in that a spacing of said network structure is 200 ?m or less, an opening ratio of the network structure is 84% or more, and in addition, a thickness of the electroconductive metal layer is 2 ?m or less.