Patents by Inventor Keitarou TSUCHIYA

Keitarou TSUCHIYA has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • METHOD FOR MANUFACTURING EPITAXIAL WAFER, SILICON-BASED SUBSTRATE FOR EPITAXIAL GROWTH, AND EPITAXIAL WAFER
    Publication number: 20210358738
    Abstract: A method for manufacturing an epitaxial wafer including the steps of: preparing a silicon-based substrate having a chamfered portion in a peripheral portion; forming an annular trench in the chamfered portion of the silicon-based substrate along an internal periphery of the chamfered portion; and performing an epitaxial growth on the silicon-based substrate having the trench formed. This provides a method for manufacturing an epitaxial wafer by which a crack generated in a peripheral chamfered portion can be suppressed from extending towards the center.
    Type: Application
    Filed: September 6, 2019
    Publication date: November 18, 2021
    Applicant: SHIN-ETSU HANDOTAI CO., LTD.
    Inventors: Keitarou TSUCHIYA, Kazunori HAGIMOTO, Masaru SHINOMIYA