Patents by Inventor Keith Cendak
Keith Cendak has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 7482676Abstract: Low dielectric materials and films comprising same have been identified for improved performance when used as performance materials, for example, in interlevel dielectrics integrated circuits as well as methods for making same. In one aspect of the present invention, the performance of the dielectric material may be improved by controlling the weight percentage of ethylene oxide groups in the at least one porogen.Type: GrantFiled: July 11, 2006Date of Patent: January 27, 2009Assignee: Air Products and Chemicals, Inc.Inventors: Brian Keith Peterson, John Francis Kirner, Scott Jeffrey Weigel, James Edward MacDougall, Lisa Deis, Thomas Albert Braymer, Keith Douglas Campbell, Martin Devenney, C. Eric Ramberg, Konstantinos Chondroudis, Keith Cendak
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Publication number: 20080044719Abstract: A composition for use as a catalyst in, for example, a fuel cell, the composition comprising platinum, copper and titanium, or an oxide, carbide and/or salt of one or more of platinum, copper and titanium, wherein the sum of the concentrations of platinum, copper and titanium, including an oxide, carbide and/or salt thereof, is greater than about 90 atomic percent.Type: ApplicationFiled: January 27, 2006Publication date: February 21, 2008Applicants: Symyx Technologies, Inc., Honda Giken Kogyo Kabushiki KaishaInventors: Alexander Gorer, Peter Strasser, Qun Fan, Konstantinos Chondroudis, Daniel Giaquinta, Keith Cendak, Hiroyuki Oyanagi, Kenta Urata
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Patent number: 7307343Abstract: Low dielectric materials and films comprising same have been identified for improved performance when used as interlevel dielectrics in integrated circuits as well as methods for making same. These materials are characterized as having a dielectric constant (?) a dielectric constant of about 3.7 or less; a normalized wall elastic modulus (E0?), derived in part from the dielectric constant of the material, of about 15 GPa or greater; and a metal impurity level of about 500 ppm or less. Low dielectric materials are also disclosed having a dielectric constant of less than about 1.95 and a normalized wall elastic modulus (E0?), derived in part from the dielectric constant of the material, of greater than about 26 GPa.Type: GrantFiled: May 30, 2002Date of Patent: December 11, 2007Assignee: Air Products and Chemicals, Inc.Inventors: John Francis Kirner, James Edward MacDougall, Brian Keith Peterson, Scott Jeffrey Weigel, Thomas Alan Deis, Martin Devenney, C. Eric Ramberg, Konstantinos Chondroudis, Keith Cendak
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Patent number: 7294585Abstract: Low dielectric materials and films comprising same have been identified for improved performance when used as performance materials, for example, in interlevel dielectrics integrated circuits as well as methods for making same. In one aspect of the present invention, the performance of the dielectric material may be improved by controlling the weight percentage of ethylene oxide groups in the at least one porogen.Type: GrantFiled: July 11, 2006Date of Patent: November 13, 2007Assignee: Air Products and Chemicals, Inc.Inventors: Brian Keith Peterson, John Francis Kirner, Scott Jeffrey Weigel, James Edward MacDougall, Lisa Deis, legal representative, Thomas Albert Braymer, Keith Douglas Campbell, Martin Devenney, C. Eric Ramberg, Konstantinos Chondroudis, Keith Cendak, Thomas Alan Deis, deceased
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Publication number: 20070054802Abstract: A fuel cell electrocatalyst that contains platinum, vanadium, and iron. In one embodiment, the fuel cell electrocatalyst has a concentration of platinum that is less than 50 atomic percent. In another embodiment, the fuel cell electrocatalyst has a concentration of vanadium that is greater than 25 atomic percent.Type: ApplicationFiled: May 19, 2004Publication date: March 8, 2007Applicants: Symyx Technolgies, Inc., Honda Giken Kogyo Kabushiki KaishaInventors: Daniel Giaquinta, Alexander Gorer, Martin Devenney, Ting He, Hiroyuki Oyanagi, Peter Strasser, Qun Fan, Konstantinos Chondroudis, Keith Cendak
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Patent number: 7186613Abstract: Low dielectric materials and films comprising same have been identified for improved performance when used as interlevel dielectrics in integrated circuits as well as methods for making same. These materials are characterized as having a dielectric constant (?) a dielectric constant of about 3.7 or less; a normalized wall elastic modulus (E0?), derived in part from the dielectric constant of the material, of about 15 GPa or greater; and a metal impurity level of about 500 ppm or less. Low dielectric materials are also disclosed having a dielectric constant of less than about 1.95 and a normalized wall elastic modulus (E0?), derived in part from the dielectric constant of the material, of greater than about 26 GPa.Type: GrantFiled: October 13, 2004Date of Patent: March 6, 2007Assignee: Air Products And Chemicals, Inc.Inventors: John Francis Kirner, James Edward MacDougall, Brian Keith Peterson, Scott Jeffrey Weigel, Thomas Alan Deis, Martin Devenney, C. Eric Ramberg, Konstantinos Chondroudis, Keith Cendak
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Publication number: 20070042259Abstract: A fuel cell catalyst comprising platinum, titanium and tungsten. In one or more embodiments, the concentration of platinum is less than 60 atomic percent, and/or the concentration of titanium is at least 20 atomic percent, and/or the concentration of tungsten is at least 25 atomic percent.Type: ApplicationFiled: June 7, 2004Publication date: February 22, 2007Applicants: Symyx Technologies, Inc., Honda Giken Kogyo Kabushiki KaishaInventors: Qun Fan, Peter Strasser, Alexander Gorer, Martin Devenney, Ting He, Hiroyuki Oyanagi, Daniel Giaquinta, Kenta Urata, Hiroichi Fukuda, Konstantinos Chondroudis, Keith Cendak
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Publication number: 20070037696Abstract: A composition for use as a catalyst in, for example, a fuel cell, the composition comprising platinum, palladium and titanium, or an oxide, carbide and/or salt of one or more of platinum, palladium and titanium, wherein the sum of the concentrations of platinum, palladium and titanium, including an oxide, carbide and/or salt thereof, is greater than about 90 atomic percent.Type: ApplicationFiled: January 23, 2006Publication date: February 15, 2007Applicants: Symyx Technologies, Inc., Honda Giken Kogyo Kabushiki KaishaInventors: Alexander Gorer, Peter Strasser, Qun Fan, Konstantinos Chondroudis, Daniel Giaquinta, Keith Cendak, Hiroyuki Oyanagi, Kenta Urata
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Publication number: 20070037039Abstract: A composition for use as a catalyst in, for example, a fuel cell, the composition comprising platinum, copper and tungsten, or an oxide, carbide and/or salt of one or more of platinum, copper and tungsten, wherein the sum of the concentrations of platinum, copper and tungsten, or an oxide, carbide and/or salt thereof, is greater than 90 atomic percent.Type: ApplicationFiled: December 21, 2005Publication date: February 15, 2007Applicants: Symyx Technologies, Inc., Honda Giken Kogyo Kabushiki KaishaInventors: Konstantinos Chondroudis, Alexander Gorer, Peter Strasser, Martin Devenney, Qun Fan, Daniel Giaquinta, Keith Cendak, Hiroyuki Oyanagi, Kenta Urata
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Publication number: 20070010396Abstract: The present invention is directed to a composition for use as a catalyst in, for example, a fuel cell, the composition comprising platinum and copper, wherein the concentration of platinum is greater than 50 atomic percent and less than about 80 atomic percent, and further wherein the composition has a particle size which is less than 35 angstroms. The present invention is further directed to various methods for preparing such a composition.Type: ApplicationFiled: August 18, 2004Publication date: January 11, 2007Applicants: Honda Giken Kogyo Kabushiki Kaisha, Symyx Technologies, Inc.Inventors: Daniel Giaquinta, Peter Strasser, Alexander Gorer, Martin Devenney, Hiroyuki Oyanagi, Kenta Urata, Hiroichi Fukuda, Keith Cendak, Konstantinos Chondroudis
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Publication number: 20060251952Abstract: A fuel cell catalyst comprising platinum, chromium, and copper, nickel or a combination thereof. In one or more embodiments, the concentration of platinum is less than 50 atomic percent, and/or the concentration of chromium is less than 30 atomic percent, and/or the concentration of copper, nickel, or a combination thereof is at least 35 atomic percent.Type: ApplicationFiled: June 3, 2004Publication date: November 9, 2006Inventors: Konstantinos Chondroudis, Alexander Gorer, Martin Devenney, Ting He, Hiroyuki Oyanagi, Daniel Gianquinta, Kenta Urata, Hiroichi Fukuda, Qun Fan, Peter Strasser, Keith Cendak
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Publication number: 20060249713Abstract: Low dielectric materials and films comprising same have been identified for improved performance when used as performance materials, for example, in interlevel dielectrics integrated circuits as well as methods for making same. In one aspect of the present invention, the performance of the dielectric material may be improved by controlling the weight percentage of ethylene oxide groups in the at least one porogen.Type: ApplicationFiled: July 11, 2006Publication date: November 9, 2006Inventors: Brian Peterson, John Kirner, Scott Weigel, James MacDougall, Thomas Deis, Lisa Deis, Thomas Braymer, Keith Campbell, Martin Devenney, C. Ramberg, Konstantinos Chondroudis, Keith Cendak
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Publication number: 20060249818Abstract: Low dielectric materials and films comprising same have been identified for improved performance when used as performance materials, for example, in interlevel dielectrics integrated circuits as well as methods for making same. In one aspect of the present invention, the performance of the dielectric material may be improved by controlling the weight percentage of ethylene oxide groups in the at least one porogen.Type: ApplicationFiled: July 11, 2006Publication date: November 9, 2006Inventors: Brian Peterson, John Kirner, Scott Weigel, James MacDougall, Lisa Deis, Thomas Braymer, Keith Campbell, Martin Devenney, C. Ramberg, Konstantinos Chondroudis, Keith Cendak
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Patent number: 7122880Abstract: Low dielectric materials and films comprising same have been identified for improved performance when used as performance materials, for example, in interlevel dielectrics integrated circuits as well as methods for making same. In one aspect of the present invention, the performance of the dielectric material may be improved by controlling the weight percentage of ethylene oxide groups in the at least one porogen.Type: GrantFiled: May 20, 2003Date of Patent: October 17, 2006Assignee: Air Products and Chemicals, Inc.Inventors: Brian Keith Peterson, John Francis Kirner, Scott Jeffrey Weigel, James Edward MacDougall, Lisa Deis, Thomas Albert Braymer, Keith Douglas Campbell, Martin Devenney, C. Eric Ramberg, Konstantinos Chondroudis, Keith Cendak
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Publication number: 20060058185Abstract: A composition for use as a catalyst in, for example, a fuel cell, the composition comprising platinum, copper, and nickel, wherein the concentration of platinum therein is greater than 50 atomic percent and less than 80 atomic percent, and further wherein the sum of the concentrations of platinum, copper and nickel is greater than 95 atomic percent.Type: ApplicationFiled: August 17, 2005Publication date: March 16, 2006Applicants: Symyx Technologies, Inc., Honda Giken Kogyo Kabushiki KaishaInventors: Keith Cendak, Alexander Gorer, Peter Strasser, Martin Devenney, Qun Fan, Konstantinos Chondroudis, Daniel Giaquinta, Kenta Urata, Hiroyuki Oyanagi
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Publication number: 20050116346Abstract: Low dielectric materials and films comprising same have been identified for improved performance when used as interlevel dielectrics in integrated circuits as well as methods for making same. These materials are characterized as having a dielectric constant (?) a dielectric constant of about 3.7 or less; a normalized wall elastic modulus (E0?), derived in part from the dielectric constant of the material, of about 15 GPa or greater; and a metal impurity level of about 500 ppm or less. Low dielectric materials are also disclosed having a dielectric constant of less than about 1.95 and a normalized wall elastic modulus (E0?), derived in part from the dielectric constant of the material, of greater than about 26 GPa.Type: ApplicationFiled: October 13, 2004Publication date: June 2, 2005Inventors: John Kirner, James MacDougall, Brian Peterson, Scott Weigel, Thomas Deis, Martin Devenney, C. Ramberg, Konstantinos Chondroudis, Keith Cendak
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Publication number: 20040071888Abstract: The present invention is generally relates to the field of research for the discovery of films with desirable properties, and to a process for making such films. More particularly, the present invention is directed to a system or an apparatus and a method for the rapid formation of a library of liquid samples and a library of thin films therefrom, as well as to the rapid screening of these films to identify those having desirable properties, all of which may be achieved using combinatorial techniques.Type: ApplicationFiled: May 30, 2003Publication date: April 15, 2004Applicants: Symyx Technologies, Inc., Air Products and Chemicals, Inc.Inventors: Konstantinos Chondroudis, Keith Cendak, Martin Devenney, C. Eric Ramberg, Xuejun (Jason) Wang, Raymond E. Carhart, Scott Jeffrey Weigel, John Francis Kirner, Thomas Alan Deis, Earl Danielson, James Edward MacDougall, Lisa Deis, Sum Nguyen
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Publication number: 20040048960Abstract: Low dielectric materials and films comprising same have been identified for improved performance when used as performance materials, for example, in interlevel dielectrics integrated circuits as well as methods for making same. In one aspect of the present invention, the performance of the dielectric material may be improved by controlling the weight percentage of ethylene oxide groups in the at least one porogen.Type: ApplicationFiled: May 20, 2003Publication date: March 11, 2004Inventors: Brian Keith Peterson, John Francis Kirner, Scott Jeffrey Weigel, James Edward MacDougall, Lisa Deis, Thomas Albert Braymer, Keith Douglas Campbell, Martin Devenney, C. Eric Ramberg, Konstantinos Chondroudis, Keith Cendak
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Publication number: 20030224156Abstract: Low dielectric materials and films comprising same have been identified for improved performance when used as interlevel dielectrics in integrated circuits as well as methods for making same. These materials are characterized as having a dielectric constant (&kgr;) a dielectric constant of about 3.7 or less; a normalized wall elastic modulus (E0′), derived in part from the dielectric constant of the material, of about 15 GPa or greater; and a metal impurity level of about 500 ppm or less. Low dielectric materials are also disclosed having a dielectric constant of less than about 1.95 and a normalized wall elastic modulus (E0′), derived in part from the dielectric constant of the material, of greater than about 26 GPa.Type: ApplicationFiled: May 30, 2002Publication date: December 4, 2003Inventors: John Francis Kirner, James Edward MacDougall, Brian Keith Peterson, Scott Jeffrey Weigel, Thomas Alan Deis, Martin Devenney, C. Eric Ramberg, Konstantinos Chondroudis, Keith Cendak
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Publication number: 20030224105Abstract: In a method and apparatus for forming a plurality of films on the surface of a substrate, at least two liquid samples are deposited by a deposition device onto the substrate surface. The substrate is moved so that the liquid samples on the substrate are subjected to a non-contact spreading force sufficient to cause the samples to spread over the surface to form a respective film thereon. At least a portion of each film is discrete from one or more other films formed on each substrate surface. In another embodiment, liquid samples of different compositions are deposited on an array of substrates. The liquid samples on at least two of the substrates are subjected to non-contact spreading forces during overlapping durations of time whereby the spreading forces are sufficient to cause the samples to spread over respective surfaces of the substrates to form films thereon.Type: ApplicationFiled: May 30, 2002Publication date: December 4, 2003Applicant: Symyx Technologies, Inc.Inventors: Konstantinos Chondroudis, C. Eric Ramberg, Martin Devenney, Keith Cendak, Sum Nguyen, Qun Fan, Xuejun Wang