Patents by Inventor Keith Chung
Keith Chung has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240115089Abstract: A toilet includes a base, a cover, and a seat. The seat is rotatably coupled to the base, and the cover is rotatably coupled to the seat. The cover and the seat define an angled axis that is oriented upward and forward toward a front end of the base. The cover and the seat are each configured to rotate about the angled axis between a lowered position in which the cover and the seat are located adjacent the base and a stowed position in which the cover and the seat are oriented in an upward direction.Type: ApplicationFiled: December 20, 2023Publication date: April 11, 2024Inventors: Chanseol Chung, Karger D. Kohler, Daniel N. Halloran, Jeffrey T. Laundre, Keith E. Muellenbach, Jennifer Tarplee, Craig Loest
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Publication number: 20240092449Abstract: An adjustable head angle bicycle assembly includes a steerer tube; a head tube that includes a first annular surface protruding radially inward from an inner wall at the upper end, and a second annular surface protruding radially inward from the inner wall at the lower end; an upper cup that includes a third annular surface engaged with the first annular surface of the head tube; and a lower cup that includes a fourth annular surface engaged with the second annular surface of the head tube.Type: ApplicationFiled: September 5, 2023Publication date: March 21, 2024Inventors: Brian Daniel Robinson, Jeffrey Keith Bowers, William Te-Chung Chan
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Publication number: 20170194138Abstract: A selective semiconductor deposition process that employs an alternating sequence of a deposition step and an etch step. During each deposition step, a semiconductor material is deposited on single crystalline surfaces at a greater deposition rate than on insulator surfaces. A combination of hydrogen chloride and a germanium-containing gas is employed within each etch step. The germanium-containing gas is employed to enhance the etch rate of hydrogen chloride, thereby enabling an effective etch process at temperatures as low as 380° C. Deposited semiconductor material is removed from above insulator surfaces, while a fraction of the deposited semiconductor material remains on semiconductor surfaces after each etch step, thereby providing a selective deposition of the semiconductor material.Type: ApplicationFiled: December 30, 2015Publication date: July 6, 2017Inventors: Paul D. Brabant, Keith Chung, Hong He, Devendra K. Sadana, Manabu Shinriki, Yunpeng Yin, Zhengmao Zhu
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Patent number: 9218962Abstract: A high order silane having a formula of SinH2n+2, in which n is an integer greater than 3, in combination with a germanium precursor gas is employed to deposit an epitaxial semiconductor alloy material including at least silicon and germanium on a single crystalline surface. The germanium precursor gas effectively reduces the gas phase reaction of the high order silane, thereby improving the thickness uniformity of the deposited epitaxial semiconductor alloy material. The combination of the high order silane and the germanium precursor gas provides a high deposition rate in the Frank-van der Merwe growth mode for deposition of a single crystalline semiconductor alloy material.Type: GrantFiled: October 18, 2013Date of Patent: December 22, 2015Assignees: GLOBALFOUNDRIES INC., MATHESON TRI-GAS, INC.Inventors: Paul D. Brabant, Keith Chung, Hong He, Devendra K. Sadana, Manabu Shinriki
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Publication number: 20140120678Abstract: The present invention addresses the key challenges in FinFET fabrication, that is, the fabrications of thin, uniform fins and also reducing the source/drain series resistance. More particularly, this application relates to FinFET fabrication techniques utilizing tetrasilane to enable conformal deposition with high doping using phosphate, arsenic and boron as dopants thereby creating thin fins having uniform thickness (uniformity across devices) as well as smooth, vertical sidewalls, while simultaneously reducing the parasitic series resistance.Type: ApplicationFiled: October 25, 2013Publication date: May 1, 2014Applicant: MATHESON TRI-GASInventors: Manabu Shinriki, Paul Brabant, Keith Chung, JR.
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Publication number: 20140045324Abstract: A high order silane having a formula of SinH2n+2, in which n is an integer greater than 3, in combination with a germanium precursor gas is employed to deposit an epitaxial semiconductor alloy material including at least silicon and germanium on a single crystalline surface. The germanium precursor gas effectively reduces the gas phase reaction of the high order silane, thereby improving the thickness uniformity of the deposited epitaxial semiconductor alloy material. The combination of the high order silane and the germanium precursor gas provides a high deposition rate in the Frank-van der Merwe growth mode for deposition of a single crystalline semiconductor alloy material.Type: ApplicationFiled: October 18, 2013Publication date: February 13, 2014Applicants: MATHESON TRI-GAS, INC., INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Paul D. Brabant, Keith Chung, Hong He, Devendra K. Sadana, Manabu Shinriki
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Patent number: 8642454Abstract: Cyclic deposit and etch (CDE) selective epitaxial growth employs an etch chemistry employing a combination of hydrogen chloride and a germanium-containing gas to provide selective deposition of a silicon germanium alloy at temperatures lower than 625° C. High strain epitaxial silicon germanium alloys having a germanium concentration greater than 35 atomic percent in a temperature range between 400° C. and 550° C. A high order silane having a formula of SinH2n+2, in which n is an integer greater than 3, in combination with a germanium-containing precursor gas is employed to deposit the silicon germanium alloy with thickness uniformity and at a high deposition rate during each deposition step in this temperature range. Presence of the germanium-containing gas in the etch chemistry enhances the etch rate of the deposited silicon germanium alloy material during the etch step.Type: GrantFiled: May 18, 2012Date of Patent: February 4, 2014Assignees: International Business Machines Corporation, Matheson Tri-Gas, Inc.Inventors: Paul D. Brabant, Keith Chung, Hong He, Devendra K. Sadana, Manabu Shinriki
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Patent number: 8412151Abstract: A method for paying back customers for unused service units remaining after a billing cycle. A payback amount is determined by the product of the number of unused service units remaining and the payback rate amount. The payback amount credited to the customer is the calculated payback rate or a maximum payback amount, wherever is smaller. A total payback amount can be determined based on a combination of payback amounts for various services, including voice services, texting services, email services, and/or data storage services.Type: GrantFiled: July 16, 2009Date of Patent: April 2, 2013Assignee: Cox Communications, Inc.Inventors: Keith Davis, Keith Chung, Jaime Buckley, Adit Uppal, Mike Pacifico, David Pugliese
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Publication number: 20130040440Abstract: A method of depositing an epitaxial layer that includes chemically cleaning the deposition surface of a semiconductor substrate and treating the deposition surface of the semiconductor substrate with a hydrogen containing gas at a pre-bake temperature. The hydrogen containing gas treatment may be conducted in an epitaxial deposition chamber. The hydrogen containing gas removes oxygen-containing material from the deposition surface of the semiconductor substrate. The deposition surface of the semiconductor substrate may then be treated with a gas flow comprised of at least one of hydrochloric acid (HCl), germane (GeH4), and dichlorosilane (H2SiCl2) that is introduced to the epitaxial deposition chamber as temperature is decreased from the pre-bake temperature to an epitaxial deposition temperature. At least one source gas may be applied to the deposition surface for epitaxial deposition of a material layer.Type: ApplicationFiled: September 13, 2012Publication date: February 14, 2013Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Thomas N. Adam, Hong He, Alexander Reznicek, Devendra K. Sadana, Paul D. Brabant, Keith Chung, Manabu Shinriki
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Publication number: 20130040438Abstract: A method of depositing an epitaxial layer that includes chemically cleaning the deposition surface of a semiconductor substrate and treating the deposition surface of the semiconductor substrate with a hydrogen containing gas at a pre-bake temperature. The hydrogen containing gas treatment may be conducted in an epitaxial deposition chamber. The hydrogen containing gas removes oxygen-containing material from the deposition surface of the semiconductor substrate. The deposition surface of the semiconductor substrate may then be treated with a gas flow comprised of at least one of hydrochloric acid (HCl), germane (GeH4), and dichlorosilane (H2SiCl2) that is introduced to the epitaxial deposition chamber as temperature is decreased from the pre-bake temperature to an epitaxial deposition temperature. At least one source gas may be applied to the deposition surface for epitaxial deposition of a material layer.Type: ApplicationFiled: August 9, 2011Publication date: February 14, 2013Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Thomas N. Adam, Hong He, Alexander Reznicek, Devendra K. Sadana, Paul D. Brabant, Keith Chung, Manabu Shinriki
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Publication number: 20120295421Abstract: Cyclic deposit and etch (CDE) selective epitaxial growth employs an etch chemistry employing a combination of hydrogen chloride and a germanium-containing gas to provide selective deposition of a silicon germanium alloy at temperatures lower than 625° C. High strain epitaxial silicon germanium alloys having a germanium concentration greater than 35 atomic percent in a temperature range between 400° C. and 550° C. A high order silane having a formula of SinH2n+2, in which n is an integer greater than 3, in combination with a germanium-containing precursor gas is employed to deposit the silicon germanium alloy with thickness uniformity and at a high deposition rate during each deposition step in this temperature range. Presence of the germanium-containing gas in the etch chemistry enhances the etch rate of the deposited silicon germanium alloy material during the etch step.Type: ApplicationFiled: May 18, 2012Publication date: November 22, 2012Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Paul D. Brabant, Keith Chung, Hong He, Devendra K. Sadana, Manabu Shinriki
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Publication number: 20110264547Abstract: A computer-implemented method for listing available resources in a client-server e-commerce system. The method comprises receiving from a first seller a first listing of at least one resource offered by the first seller and receiving from a second seller a second listing of at least one resource offered by the second seller. For each resource of the first and second listings, the method further comprises receiving an indication of attributes of the resource, receiving an indication of relationships between the attributes, and based on the received indication of attributes and the indication of relationships, dividing the attributes into at least two sets, wherein the dividing of the attributes is characteristic of an organizational structure offering services.Type: ApplicationFiled: April 27, 2011Publication date: October 27, 2011Inventors: Daniel Trang, Keith Chung
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Publication number: 20110014893Abstract: A method for paying back customers for unused service units remaining after a billing cycle. A payback amount is determined by the product of the number of unused service units remaining and the payback rate amount. The payback amount credited to the customer is the calculated payback rate or a maximum payback amount, wherever is smaller. A total payback amount can be determined based on a combination of payback amounts for various services, including voice services, texting services, email services, and/or data storage services.Type: ApplicationFiled: July 16, 2009Publication date: January 20, 2011Applicant: COX COMMUNICATIONS, INC.Inventors: Keith Davis, Keith Chung, Jaime Buckley, Adit Uppal, Mike Pacifico, David Pugliese
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Patent number: D635813Type: GrantFiled: January 20, 2010Date of Patent: April 12, 2011Assignee: Conair CorporationInventors: Devin Lee Moore, Erick Eladio Rios, Shun Keith Chung Tse
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Patent number: D635818Type: GrantFiled: January 20, 2010Date of Patent: April 12, 2011Assignee: Conair CorporationInventor: Shun Keith Chung Tse
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Patent number: D642853Type: GrantFiled: February 25, 2011Date of Patent: August 9, 2011Assignee: Conair CorporationInventor: Keith Chung Shun Tse
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Patent number: D642860Type: GrantFiled: February 25, 2011Date of Patent: August 9, 2011Assignee: Conair CorporationInventor: Keith Chung Shun Tse
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Patent number: D645301Type: GrantFiled: February 25, 2011Date of Patent: September 20, 2011Assignee: Conair CorporationInventor: Keith Chung Shun Tse
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Patent number: D679935Type: GrantFiled: August 22, 2012Date of Patent: April 16, 2013Assignee: Conair CorporationInventors: Keith Chung Shun Tse, Susan Hong Mei Lau
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Patent number: D704350Type: GrantFiled: August 9, 2012Date of Patent: May 6, 2014Assignee: Conair CorporationInventors: Susan Hong Mei Lau, Keith Chung Shun Tse