Abstract: A method for forming a plurality of strips to be used for formulating high-breakdown strength and high-temperature capacitors is disclosed. The method includes forming a metalized substrate having a particular pattern, masking a portion of the metalized substrate, coating the metalized substrate with a dielectric material and removing the masking material and thus the dielectric layer from a portion of the metalized layer to form a contact surface. In lieu of placing a masking material on the metalized substrate, the exposed contact area can be formed by shielding a portion of the metalized substrate while depositing the dielectric layer.

Abstract: A display system for a parachutist is provided based on navigation data and calculations of locations where the parachutist should steer the parachute to increase likelihood of reaching a target. A two-dimensional representation of a navigation funnel is displayed. The display may increase situational awareness by use of color to indicate preferred positions in the navigation funnel.

Abstract: Projectile apparatus is provided employing light and sound that may be dispersed over a large area with high intensity to produce a non-lethal, visible and audible countermeasure to temporarily blind and/or disorient one or multiple potential adversaries. The apparatus is suitable for use in tactical scenarios by military, police, and special operations personnel. The apparatus is also suitable for use in training operations for military, police, and special operations personnel. For amusement or recreation, the apparatus may be used in simulated warfare or in games such as paintball.

Abstract: A method for forming a plurality of strips to be used for formulating high-breakdown strength and high-temperature capacitors is disclosed. The method includes forming a metalized substrate having a particular pattern, masking a portion of the metalized substrate, coating the metalized substrate with a dielectric material and removing the masking material and thus the dielectric layer from a portion of the metalized layer to form a contact surface. In lieu of placing a masking material on the metalized substrate, the exposed contact area can be formed by shielding a portion of the metalized substrate while depositing the dielectric layer.

Abstract: A display system for a parachutist is provided based on navigation data and calculations of locations where the parachutist should steer the parachute to increase likelihood of reaching a target. A two-dimensional representation of a navigation funnel is displayed. The display may increase situational awareness by use of color to indicate preferred positions in the navigation funnel.

Abstract: Flexible films or sheets for forming high-breakdown strength, high-temperature capacitors are disclosed. Amorphous metal oxides and nitrides, preferably SiO2 or HfO2, with a dielectric constant (k) greater than 2 and stacks of oxides and nitrides formed over conducting substrates may be formed. The dielectrics may be formed by reactive sputter deposition of the amorphous materials onto cooled substrates. The cooled substrate allows the films to be amorphous or nanocrystalline and results in films that can be flexed and that can be rolled into cylindrical shapes. An important application for these dielectrics is in high energy-density wound capacitors.

Abstract: Projectile apparatus is provided employing light and sound that may be dispersed over a large area with high intensity to produce a non-lethal, visible and audible countermeasure to temporarily blind and/or disorient one or multiple potential adversaries. The apparatus is suitable for use in tactical scenarios by military, police, and special operations personnel. The apparatus is also suitable for use in training operations for military, police, and special operations personnel. For amusement or recreation, the apparatus may be used in simulated warfare or in games such as paintball.

Abstract: An electron field emission device is provided by placing a substrate in a reactor, heating the substrate and supplying a mixture of hydrogen and a carbon-containing gas at a concentration of about 8 to 13 percent to the reactor while supplying energy to the mixture of gases near the substrate for a time to grow a first layer of carbon-based material to a thickness greater than about 0.5 micrometers, subsequently reducing the concentration of the carbon-containing gas and continuing to grow a second layer of carbon-based material, the second layer being much thicker than the first layer. The substrate is subsequently removed from the first layer and an electrode is applied to the second layer. The surface of the substrate may be patterned before growth of the first layer to produce a patterned surface on the field emission device. The device is free-standing and can be used as a cold cathode in a variety of electronic devices such as cathode ray tubes, amplifiers and traveling wave tubes.

Abstract: A field emitter (10) having improved electron emission properties is provided. Electron-emitting microtip protrusions (14) in an emitter layer (12) are separated from a dielectric layer (18) by an interlayer (16) that prevents substantial mixing of the dielectric (16) and the emitter layer (12) during growth of the dielectric layer (18). A conductive gate electrode layer (20) is deposited on the dielectric layer (18). For carbon-based emitters, aluminum is one of several suitable interlayers between the carbon layer and a silicon dioxide dielectric layer.

Abstract: An array of carbon-based emitters is provided having more uniform electron emission over the area of the array. This is made possible by a resistive layer that is present below each of the emission tips. Both organic and inorganic resistive layers may be grown under the emitting carbon-based material. A conductive backing layer is in contact with the resistive layer. Methods for making the improved array are provided. The methods include growth of carbon-based tips in a mold, removal of various films or portions of films by etching, and other techniques.

Abstract: An electron field emission device is provided by placing a substrate in a reactor, heating the substrate and supplying a mixture of hydrogen and a carbon-containing gas to the reactor while supplying energy to the mixture of gases near the substrate for a time to grow a carbon-based body to a thickness greater than 20 micrometers, subsequently removing the substrate and then applying an electrical contact to one surface of the body. The device is free-standing and can be used as a cold cathode in a variety of electronic devices such as cathode ray tubes, amplifiers and traveling wave tubes. The surface of the substrate may be patterned before growth of the carbon-based body to produce a patterned surface on the field emission device after the substrate is removed.

Abstract: A field emission cathode providing for dynamic adjustment of beam shape is disclosed. Beam shape adjustment is accomplished by segmenting the gate electrode of a gated field emission cathode and independently driving the various gate segments to form the desired beam shape. Segments can be turned on and off as the beam is deflected allowing dynamic correction of aberrations in the beam. A focus lens can be placed on the gated cathode to produce a parallel electron beam. In addition, a hollow cathode can be produced to minimize space charge repulsion in a beam.

Abstract: Apparatus and method for mounting a field emission device having emitters and an extraction grid in an electron gun are provided. The apparatus may be adapted from parts of a conventional electron gun that uses a thermionic emitter. Electrical connection to the grid is provided by bumps that are spring-loaded against a conducting surface, such as the second grid of a conventional electron gun.

Abstract: An electron field emission device is provided by placing a substrate in a reactor, heating the substrate and supplying a mixture of hydrogen and a carbon-containing gas at a concentration of about 8 to 13 percent to the reactor while supplying energy to the mixture of gases near the substrate for a time to grow a first layer of carbon-based material to a thickness greater than about 0.5 micrometers, subsequently reducing the concentration of the carbon-containing gas and continuing to grow a second layer of carbon-based material, the second layer being much thicker than the first layer. The substrate is subsequently removed from the first layer and an electrode is applied to the second layer. The surface of the substrate may be patterned before growth of the first layer to produce a patterned surface on the field emission device. The device is free-standing and can be used as a cold cathode in a variety of electronic devices such as cathode ray tubes, amplifiers and traveling wave tubes.

Abstract: An electron field emission device is provided by placing a substrate in a reactor, heating the substrate and supplying a mixture of hydrogen and a carbon-containing gas at a concentration of about 8 to 13 per cent to the reactor while supplying energy to the mixture of gases near the substrate for a time to grow a first layer of carbon-based material to a thickness greater than about 0.5 micrometers, subsequently reducing the concentration of the carbon-containing gas and continuing to grow a second layer of carbon-based material, the second layer being much thicker than the first layer. The substrate is subsequently removed from the first layer and an electrode is applied to the second layer. The surface of the substrate may be patterned before growth of the first layer to produce a patterned surface on the field emission device. The device is free-standing and can be used as a cold cathode in a variety of electronic devices such as cathode ray tubes, amplifiers and traveling wave tubes.

Abstract: An electron field emission device is provided by placing a substrate in a reactor, heating the substrate and supplying a mixture of hydrogen and a carbon-containing gas at a concentration of about 8 to 13 per cent to the reactor while supplying energy to the mixture of gases near the substrate for a time to grow a first layer of carbon-based material to a thickness greater than about 0.5 micrometers, subsequently reducing the concentration of the carbon-containing gas and continuing to grow a second layer of carbon-based material, the second layer being much thicker than the first layer. The substrate is subsequently removed from the first layer and an electrode is applied to the second layer. The surface of the substrate may be patterned before growth of the first layer to produce a patterned surface on the field emission device. The device is free-standing and can be used as a cold cathode in a variety of electronic devices such as cathode ray tubes, amplifiers and traveling wave tubes.

Abstract: A source of a focused electron beam is provided for use in a cathode ray tube (CRT) or vacuum microelectronic device. A carbon-based field emission cathode, extraction gate and focus lens are formed as an integrated structure using fabrication techniques that are used to form integrated circuits. An external focus lens is used to confine the beamlets from a large number of carbon-based surfaces. A convergence cup accelerates the beam toward a drift space and finally to a screen on a CRT or other device. The source may be much more compact than present CRT electron optics apparatus.

Abstract: An electron field emission device is provided by placing a substrate in a reactor, heating the substrate and supplying a mixture of hydrogen and a carbon-containing gas at a concentration of about 8 to 13 per cent to the reactor while supplying energy to the mixture of gases near the substrate for a time to grow a first layer of carbon-based material to a thickness greater than about 0.5 micrometers, subsequently reducing the concentration of the carbon-containing gas and continuing to grow a second layer of carbon-based material, the second layer being much thicker than the first layer. The substrate is subsequently removed from the first layer and an electrode is applied to the second layer. The surface of the substrate may be patterned before growth of the first layer to produce a patterned surface on the field emission device. The device is free-standing and can be used as a cold cathode in a variety of electronic devices such as cathode ray tubes, amplifiers and traveling wave tubes.

Abstract: An electron field emission device is provided by placing a substrate in a reactor, heating the substrate and supplying a mixture of hydrogen and a carbon-containing gas at a concentration of about 8 to 13 per cent to the reactor while supplying energy to the mixture of gases near the substrate for a time to grow a first layer of carbon-based material to a thickness greater than about 0.5 micrometers, subsequently reducing the concentration of the carbon-containing gas and continuing to grow a second layer of carbon-based material, the second layer being much thicker than the first layer. The substrate is subsequently removed from the first layer and an electrode is applied to the second layer. The device is free-standing and can be used as a cold cathode in a variety of electronic devices such as cathode ray tubes, amplifiers and traveling wave tubes. The surface of the substrate may be patterned before growth of the first layer to produce a patterned surface on the field emission device.

Abstract: Method is provided for controlling the concentration of a dopant introduced into an epitaxial film during CVD or sublimation growth by controlling the energy of dopant atoms impinging on the film in a supersonic beam. Precursor materials may also be introduced by supersonic beam. Energy of the dopant atoms may be changed by changing flow conditions in the supersonic beam or changing carrier gases. Flow may be continuous or pulsed. Examples of silicon carbide doping are provided.