Patents by Inventor Keith Donegan

Keith Donegan has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20230393340
    Abstract: IC chips for photonics applications are disclosed. An example IC chip includes a substrate, an optical component above the substrate, and a first connection level above the substrate. The first connection level includes the optical component and a first cladding structure, in which the optical component is covered by the first cladding structure. The IC chip also includes a second connection level on the first connection level. The second connection level includes a first interlayer dielectric material. The IC chip further includes a second cladding structure directly above the optical component. The second cladding structure has at least a section within the second connection level. The second cladding structure is on the first cladding structure. The second cladding structure is laterally adjacent to and in direct contact with the first interlayer dielectric material. The second cladding structure includes a material different from the first interlayer dielectric material.
    Type: Application
    Filed: June 6, 2022
    Publication date: December 7, 2023
    Inventors: RYAN SPORER, KAREN NUMMY, KEITH DONEGAN, THOMAS HOUGHTON, YUSHENG BIAN, TAKAKO HIROKAWA, KENNETH GIEWONT
  • Publication number: 20230266544
    Abstract: Structures including an edge coupler, and methods of fabricating a structure that includes an edge coupler. The structure includes an edge coupler having a waveguide core with an end surface and a longitudinal axis. The end surface defines a plane tilted in a first direction at a first acute angle relative to the longitudinal axis and tilted in a second direction at a second acute angle relative to the longitudinal axis. The second direction differs from the first direction.
    Type: Application
    Filed: February 24, 2022
    Publication date: August 24, 2023
    Inventors: Yusheng Bian, Nicholas Polomoff, Keith Donegan, Qizhi Liu, Steven M. Shank
  • Patent number: 11719895
    Abstract: Structures including an edge coupler, and methods of fabricating a structure that includes an edge coupler. The structure includes an edge coupler having a waveguide core with an end surface and a longitudinal axis. The end surface defines a plane tilted in a first direction at a first acute angle relative to the longitudinal axis and tilted in a second direction at a second acute angle relative to the longitudinal axis. The second direction differs from the first direction.
    Type: Grant
    Filed: February 24, 2022
    Date of Patent: August 8, 2023
    Assignee: GlobalFoundries U.S. Inc.
    Inventors: Yusheng Bian, Nicholas Polomoff, Keith Donegan, Qizhi Liu, Steven M. Shank
  • Patent number: 11417525
    Abstract: Methods of self-aligned multiple patterning. A hardmask is deposited over an interlayer dielectric layer. A mandrel is formed over the hardmask. A block mask is formed that covers a first lengthwise section of the mandrel and that exposes second and third lengthwise sections of the mandrel. After forming the block mask, the second and third lengthwise sections of the mandrel are removed to define a pattern including respective first and second mandrel lines that are separated from each other by the first lengthwise section of the mandrel. The first mandrel line and the second mandrel line expose respective portions of the hardmask, and the first lengthwise section of the mandrel line covers another portion of the hardmask. The pattern is transferred to the hardmask with an etching process, and subsequently transferred to the interlayer dielectric layer with another etching process.
    Type: Grant
    Filed: October 8, 2018
    Date of Patent: August 16, 2022
    Assignee: GlobalFoundries U.S. Inc.
    Inventors: Martin O'Toole, Keith Donegan, Brendan O'Brien, Hsueh-Chung Chen, Terry A. Spooner, Craig Child, Sean Reidy, Ravi Prakash Srivastava, Louis Lanzerotti, Atsushi Ogino
  • Patent number: 11158574
    Abstract: One illustrative device disclosed herein includes a layer of insulating material with its upper surface positioned at a first level and a recessed conductive interconnect structure positioned at least partially within the layer of insulating material, wherein a recessed upper surface of the recessed conductive interconnect structure is positioned at a second level that is below the first level. In this example, the device also includes a conductive cap layer positioned on the recessed upper surface of the recessed conductive interconnect structure, wherein an upper surface of the conductive cap layer is substantially co-planar with the upper surface of the layer of insulating material and a memory cell positioned above the conductive cap layer, wherein the memory cell comprises a lower conductive material that is conductively coupled to the conductive cap layer.
    Type: Grant
    Filed: December 24, 2019
    Date of Patent: October 26, 2021
    Assignee: GlobalFoundries U.S. Inc.
    Inventors: Nicholas LiCausi, Julien Frougier, Keith Donegan, Hyung Woo Kim
  • Patent number: 11121087
    Abstract: One illustrative device disclosed herein includes a layer of insulating material having an upper surface positioned at a first level and a recessed conductive interconnect structure positioned at least partially within the layer of insulating material, wherein the recessed conductive interconnect structure has a recessed upper surface that is positioned at a second level that is below the first level. In this example, the device also includes a recess defined in the recessed conductive interconnect structure, a memory cell positioned above the recessed conductive interconnect structure and a conductive via plug that is conductively coupled to the recessed conductive interconnect structure and a lower conductive material of the memory cell, wherein at least a portion of the conductive via plug is positioned in the recess defined in the recessed conductive interconnect.
    Type: Grant
    Filed: December 24, 2019
    Date of Patent: September 14, 2021
    Assignee: GLOBALFOUNDRIES U.S. INC.
    Inventors: Nicholas LiCausi, Julien Frougier, Keith Donegan, Hyung Woo Kim
  • Publication number: 20210193584
    Abstract: One illustrative device disclosed herein includes a layer of insulating material having an upper surface positioned at a first level and a recessed conductive interconnect structure positioned at least partially within the layer of insulating material, wherein the recessed conductive interconnect structure has a recessed upper surface that is positioned at a second level that is below the first level. In this example, the device also includes a recess defined in the recessed conductive interconnect structure, a memory cell positioned above the recessed conductive interconnect structure and a conductive via plug that is conductively coupled to the recessed conductive interconnect structure and a lower conductive material of the memory cell, wherein at least a portion of the conductive via plug is positioned in the recess defined in the recessed conductive interconnect.
    Type: Application
    Filed: December 24, 2019
    Publication date: June 24, 2021
    Inventors: Nicholas LiCausi, Julien Frougier, Keith Donegan, Hyung Woo Kim
  • Publication number: 20210193573
    Abstract: One illustrative device disclosed herein includes a layer of insulating material with its upper surface positioned at a first level and a recessed conductive interconnect structure positioned at least partially within the layer of insulating material, wherein a recessed upper surface of the recessed conductive interconnect structure is positioned at a second level that is below the first level. In this example, the device also includes a conductive cap layer positioned on the recessed upper surface of the recessed conductive interconnect structure, wherein an upper surface of the conductive cap layer is substantially co-planar with the upper surface of the layer of insulating material and a memory cell positioned above the conductive cap layer, wherein the memory cell comprises a lower conductive material that is conductively coupled to the conductive cap layer.
    Type: Application
    Filed: December 24, 2019
    Publication date: June 24, 2021
    Inventors: Nicholas LiCausi, Julien Frougier, Keith Donegan, Hyung Woo Kim
  • Patent number: 10651046
    Abstract: Methods of self-aligned multiple patterning. A mandrel is formed over a hardmask, and a planarizing layer is formed over the mandrel and the hardmask. The planarizing layer is patterned to form first and second trenches exposing respective first and second lengthwise sections of the mandrel. A portion of the patterned planarizing layer covers a third lengthwise section of the mandrel arranged between the first and second lengthwise sections of the mandrel. After patterning the planarizing layer, the first and second lengthwise sections of the mandrel are removed with an etching process to define a pattern including a mandrel line exposing respective first portions of the hardmask. The third lengthwise section of the mandrel is masked by the portion of the planarizing layer during the etching process, and the third lengthwise section covers a second portion of the hardmask arranged along the mandrel line between the first portions of the hardmask.
    Type: Grant
    Filed: October 8, 2018
    Date of Patent: May 12, 2020
    Assignee: GLOBALFOUNDRIES INC.
    Inventors: Hsueh-Chung Chen, Brendan O'Brien, Martin O'Toole, Keith Donegan
  • Publication number: 20200111676
    Abstract: Methods of self-aligned multiple patterning. A mandrel is formed over a hardmask, and a planarizing layer is formed over the mandrel and the hardmask. The planarizing layer is patterned to form first and second trenches exposing respective first and second lengthwise sections of the mandrel. A portion of the patterned planarizing layer covers a third lengthwise section of the mandrel arranged between the first and second lengthwise sections of the mandrel. After patterning the planarizing layer, the first and second lengthwise sections of the mandrel are removed with an etching process to define a pattern including a mandrel line exposing respective first portions of the hardmask. The third lengthwise section of the mandrel is masked by the portion of the planarizing layer during the etching process, and the third lengthwise section covers a second portion of the hardmask arranged along the mandrel line between the first portions of the hardmask.
    Type: Application
    Filed: October 8, 2018
    Publication date: April 9, 2020
    Inventors: Hsueh-Chung Chen, Brendan O'Brien, Martin O'Toole, Keith Donegan
  • Publication number: 20200111668
    Abstract: Methods of self-aligned multiple patterning. A hardmask is deposited over an interlayer dielectric layer. A mandrel is formed over the hardmask. A block mask is formed that covers a first lengthwise section of the mandrel and that exposes second and third lengthwise sections of the mandrel. After forming the block mask, the second and third lengthwise sections of the mandrel are removed to define a pattern including respective first and second mandrel lines that are separated from each other by the first lengthwise section of the mandrel. The first mandrel line and the second mandrel line expose respective portions of the hardmask, and the first lengthwise section of the mandrel line covers another portion of the hardmask. The pattern is transferred to the hardmask with an etching process, and subsequently transferred to the interlayer dielectric layer with another etching process.
    Type: Application
    Filed: October 8, 2018
    Publication date: April 9, 2020
    Inventors: Martin O'Toole, Keith Donegan, Brendan O'Brien, Hsueh-Chung Chen, Terry A. Spooner, Craig Child, Sean Reidy, Ravi Prakash Srivastava, Louis Lanzerotti, Atsushi Ogino
  • Patent number: 10199270
    Abstract: Interconnect structures and methods of fabricating an interconnect structure. First and second non-mandrel interconnects are formed in an interlayer dielectric layer. The first non-mandrel interconnect and the second non-mandrel interconnect have respective side surfaces that extend in a first direction. The connector interconnect extends in a second direction transverse to the first direction from the side surface of the first non-mandrel interconnect to the side surface of the second non-mandrel interconnect.
    Type: Grant
    Filed: May 25, 2017
    Date of Patent: February 5, 2019
    Assignee: GLOBALFOUNDRIES Inc.
    Inventors: Colin Bombardier, Ming He, Vikrant Chauhan, Anbu Selvam KM Mahalingam, Keith Donegan
  • Publication number: 20180342421
    Abstract: Interconnect structures and methods of fabricating an interconnect structure. First and second non-mandrel interconnects are formed in an interlayer dielectric layer. The first non-mandrel interconnect and the second non-mandrel interconnect have respective side surfaces that extend in a first direction. The connector interconnect extends in a second direction transverse to the first direction from the side surface of the first non-mandrel interconnect to the side surface of the second non-mandrel interconnect.
    Type: Application
    Filed: May 25, 2017
    Publication date: November 29, 2018
    Inventors: Colin Bombardier, Ming He, Vikrant Chauhan, Anbu Selvam KM Mahalingam, Keith Donegan
  • Patent number: 9287109
    Abstract: One method disclosed herein includes forming a layer of insulating material above a semiconductor substrate, forming a hard mask layer comprised of a metal-containing material above the layer of insulating material, forming a blanket protection layer on the hard mask layer, forming a masking layer above the protection layer, performing at least one etching process on the masking layer to form a patterned masking layer having an opening that stops on and exposes a portion of the blanket protection layer, confirming that the patterned masking layer is properly positioned relative to at least one underlying structure or layer and, after confirming that the patterned masking layer is properly positioned, performing at least one etching process through the patterned masking layer to pattern at least the blanket protection layer.
    Type: Grant
    Filed: March 13, 2013
    Date of Patent: March 15, 2016
    Assignee: GLOBALFOUNDRIES Inc.
    Inventors: Torsten Huisinga, Keith Donegan, Robert Seidel
  • Publication number: 20140264758
    Abstract: One method disclosed herein includes forming a layer of insulating material above a semiconductor substrate, forming a hard mask layer comprised of a metal-containing material above the layer of insulating material, forming a blanket protection layer on the hard mask layer, forming a masking layer above the protection layer, performing at least one etching process on the masking layer to form a patterned masking layer having an opening that stops on and exposes a portion of the blanket protection layer, confirming that the patterned masking layer is properly positioned relative to at least one underlying structure or layer and, after confirming that the patterned masking layer is properly positioned, performing at least one etching process through the patterned masking layer to pattern at least the blanket protection layer.
    Type: Application
    Filed: March 13, 2013
    Publication date: September 18, 2014
    Applicant: GLOBALFOUNDRIES INC.
    Inventors: Torsten Huisinga, Keith Donegan, Robert Seidel