Abstract: Thermal temperature sensors for power amplifiers are provided herein. In certain implementations, a semiconductor die includes a compound semiconductor substrate, and a power amplifier including a plurality of field-effect transistors (FETs) configured to amplify a radio frequency (RF) signal. The plurality of FETs are arranged on the compound semiconductor substrate as a transistor array. The semiconductor die further includes a semiconductor resistor configured to generate a signal indicative of a temperature of the transistor array. The semiconductor resistor is located adjacent to one end of the transistor array.

Abstract: Thermal temperature sensors for power amplifiers are provided herein. In certain implementations, a semiconductor die includes a compound semiconductor substrate, and a power amplifier including a plurality of field-effect transistors (FETs) configured to amplify a radio frequency (RF) signal. The plurality of FETs are arranged on the compound semiconductor substrate as a transistor array. The semiconductor die further includes a semiconductor resistor configured to generate a signal indicative of a temperature of the transistor array. The semiconductor resistor is located adjacent to one end of the transistor array.

Abstract: Thermal temperature sensors for power amplifiers are provided herein. In certain implementations, a semiconductor die includes a compound semiconductor substrate, and a power amplifier including a plurality of field-effect transistors (FETs) configured to amplify a radio frequency (RF) signal. The plurality of FETs are arranged on the compound semiconductor substrate as a transistor array. The semiconductor die further includes a semiconductor resistor configured to generate a signal indicative of a temperature of the transistor array. The semiconductor resistor is located adjacent to one end of the transistor array.

Abstract: Thermal temperature sensors for power amplifiers are provided herein. In certain implementations, a semiconductor die includes a compound semiconductor substrate, and a power amplifier including a plurality of field-effect transistors (FETs) configured to amplify a radio frequency (RF) signal. The plurality of FETs are arranged on the compound semiconductor substrate as a transistor array. The semiconductor die further includes a semiconductor resistor configured to generate a signal indicative of a temperature of the transistor array. The semiconductor resistor is located adjacent to one end of the transistor array.

Abstract: A packaged radio frequency (RF) module is disclosed. The module can include a substrate, a first die electrically and mechanically attached to the substrate, a second die electrically and mechanically attached to the substrate, an encapsulating material, and a lid attached to the substrate. The first die comprises a silicon-based die, such as an RF switch die, and the second die comprises a compound semiconductor die, such as an RF amplifier. The encapsulating material can protect electrical connections between the first die and the substrate. The substrate and the lid at least partially define an air cavity within which the first and the second die are mounted. An active surface of the second die is exposed to the air cavity.

Abstract: A packaged radio frequency (RF) module is disclosed. The module can include a substrate, a first die electrically and mechanically attached to the substrate, a second die electrically and mechanically attached to the substrate, an encapsulating material, and a lid attached to the substrate. The first die comprises a silicon-based die, such as an RF switch die, and the second die comprises a compound semiconductor die, such as an RF amplifier. The encapsulating material can protect electrical connections between the first die and the substrate. The substrate and the lid at least partially define an air cavity within which the first and the second die are mounted. An active surface of the second die is exposed to the air cavity.