Abstract: A thick film hybrid multilayer circuit is provided in which circuit devices are electrically interconnected with a multilayer structure composed of multiple layers of conductors interlaid with layers of a dielectric material in order to achieve high component density. The circuit devices of the hybrid circuit are directly mounted to a substrate, with the multilayer conductor-dielectric structure being located on an opposite surface of the substrate so as to insulate the multilayer conductor-dielectric structure from the circuit devices. As such, the multilayer conductor-dielectric structure, which is inherently weaker than the substrate, is relatively insulated from the adverse effects caused by thermal cycling during the operation of the hybrid circuit, so as to reduce the likelihood of cracks developing in the dielectric material within the multilayer conductor-dielectric structure.

Abstract: A thick film cermet thermistor having a low to moderate electrical resistivity but high resistance to abrasion and humidity is disclosed. The thermistor composition has a sintering aid and a sealing glass that soften at significantly different temperatures. The thermistor film is sintered after application to a substrate predominantly between the two softening point temperatures. Sintering temperature is raised above the higher softening point temperature long enough to glaze the thick film and bond it to the substrate but not long enough to substantially increase film resistance. A composition is disclosed that can be sintered under the same firing conditions for resistor and conductor films, permitting one firing to be used to sinter all three types of films.

Abstract: A functionally adjusted thick-film thermistor-resistor network having an accurately preselected electrical resistance and change of electrical resistance with temperature, and a method of forming the same. The network features a thermistor and/or a conductor segment contacting the thermistor having a plurality of parallel paths. Some of the paths preferably provide a different resistance change with temperature than others. A selected number of the parallel paths are severed during functional testing to adjust the thermistor to a preselected change in network resistance with change in temperature. The resistor is functionally adjusted in the usual manner to obtain the selected total network resistance value at room temperature.