Abstract: Various embodiments are generally directed to techniques of generating a unique biometric key, hashing and salting the key, and storing it. Embodiments include techniques to analyze biological information associated with a user and determine one or more biological characteristics from the analyzed information. The biological characteristics may be used to generate a character string unique to the user, which may be used to generate the biometric key based on a cryptographic algorithm. The hash values, salt values, or the hash function may be changed at a predetermined interval.

Abstract: An apparatus for depositing film stacks in-situ (i.e., without a vacuum break or air exposure) are described. In one example, a plasma-enhanced chemical vapor deposition apparatus configured to deposit a plurality of film layers on a substrate without exposing the substrate to a vacuum break between film deposition phases, is provided. The apparatus includes a process chamber, a plasma source and a controller configured to control the plasma source to generate reactant radicals using a particular reactant gas mixture during the particular deposition phase, and sustain the plasma during a transition from the particular reactant gas mixture supplied during the particular deposition phase to a different reactant gas mixture supplied during a different deposition phase.

Abstract: An apparatus for depositing film stacks in-situ (i.e., without a vacuum break or air exposure) are described. In one example, an apparatus configured to deposit a plurality of film layers having different compositions on a substrate without exposing the substrate to a vacuum break between film deposition phases, is provided. The apparatus includes a process chamber, a plasma source and a process station reactant feed fluidically coupled to a gas inlet of the process station, and fluidically coupled to an inert gas delivery line, a first reactant mixture gas delivery line and a second reactant mixture gas delivery line such that the first reactant gas mixture and the second reactant gas mixture can be introduced sequentially into the process station reactant feed, and supplied via a shared path to the process station.

Abstract: An embodiment includes a bag comprising mesh and film side walls and a reinforcing strip of film; wherein (a) the mesh side wall is sealed to opposing side edges of the film side wall; (b) the reinforcing strip of film is sealed to an upper portion of the mesh side wall and to the opposing side edges of the film side wall; (c) the film side wall has a bottom extension, which is monolithic with the film side wall, extending upwardly and sealed along a lateral extent of a bottom portion of the mesh side wall; (d) the film side wall is non-coplanar with a portion of the bottom extension; (e) another portion of the bottom extension is non-coplanar with the mesh side wall; and (f) a horizontal axis intersects the bottom portion of the film side wall and three portions of the bottom extension.

Abstract: An apparatus comprises a first liquid input line, a second liquid input line, a third liquid input line, a first liquid flow controller with an input in fluid contact with the first liquid input line, a second liquid flow controller with an input in fluid contact with the second liquid input line, a third liquid flow controller with an input in fluid contact with the third liquid input line, a common manifold in fluid contact with an output of the first liquid flow controller and an output of the second liquid flow controller and an output of the third liquid flow controller, and a vaporizer with an input in fluid contact with the common manifold.

Abstract: An embodiment includes a bag comprising mesh and film side walls and a reinforcing strip of film; wherein (a) the mesh side wall is sealed to opposing side edges of the film side wall; (b) the reinforcing strip of film is sealed to an upper portion of the mesh side wall and to the opposing side edges of the film side wall; (c) the film side wall has a bottom extension, which is monolithic with the film side wall, extending upwardly and sealed along a lateral extent of a bottom portion of the mesh side wall; (d) the film side wall is non-coplanar with a portion of the bottom extension; (e) another portion of the bottom extension is non-coplanar with the mesh side wall; and (f) a horizontal axis intersects the bottom portion of the film side wall and three portions of the bottom extension.

Abstract: An apparatus for hanging a garment comprising a vertical suspension member hangable from a body, a garment support member suspended from the suspension member, the garment support member extending laterally from opposed sides of the suspension member; and an arcuate hood support member extending between first and second ends and having a midpoint therebetween, wherein the first and second ends of the hood support member are secured to the garment support member and wherein the midpoint of the hood support member is cantilevered upward from the garment support member. A method for hanging a garment comprising providing an apparatus for hanging a garment, positioning a shoulder portion of the garment on the garment support member with the suspension member extending above the shoulder portion, positioning a hood on the hood support member and hanging the apparatus on a support.

Abstract: Films that can be useful in large area gap fill applications, such as in the formation of advanced 3D NAND devices, involve processing a semiconductor substrate by depositing on a patterned semiconductor substrate a doped silicon oxide film, the film having a thickness of at least 5 gm, and annealing the doped silicon oxide film to a temperature above the film glass transition temperature. In some embodiments, reflow of the film may occur. The composition and processing conditions of the doped silicon oxide film may be tailored so that the film exhibits substantially zero as-deposited stress, substantially zero stress shift post-anneal, and substantially zero shrinkage post-anneal.

Abstract: An embodiment includes a bag comprising mesh and film side walls and a reinforcing strip of film; wherein (a) the mesh side wall is sealed to opposing side edges of the film side wall; (b) the reinforcing strip of film is sealed to an upper portion of the mesh side wall and to the opposing side edges of the film side wall; (c) the film side wall has a bottom extension, which is monolithic with the film side wall, extending upwardly and sealed along a lateral extent of a bottom portion of the mesh side wall; (d) the film side wall is non-coplanar with a portion of the bottom extension; (e) another portion of the bottom extension is non-coplanar with the mesh side wall; and (f) a horizontal axis intersects the bottom portion of the film side wall and three portions of the bottom extension.

Abstract: An embodiment includes a bag comprising mesh and film side walls and a reinforcing strip of film; wherein (a) the mesh side wall is sealed to opposing side edges of the film side wall; (b) the reinforcing strip of film is sealed to an upper portion of the mesh side wall and to the opposing side edges of the film side wall; (c) the film side wall has a bottom extension, which is monolithic with the film side wall, extending upwardly and sealed along a lateral extent of a bottom portion of the mesh side wall; (d) the film side wall is non-coplanar with a portion of the bottom extension; (e) another portion of the bottom extension is non-coplanar with the mesh side wall; and (f) a horizontal axis intersects the bottom portion of the film side wall and three portions of the bottom extension.

Abstract: An apparatus for depositing film stacks in-situ (i.e., without a vacuum break or air exposure) are described. In one example, a plasma-enhanced chemical vapor deposition apparatus configured to deposit a plurality of film layers on a substrate without exposing the substrate to a vacuum break between film deposition phases, is provided. The apparatus includes a process chamber, a plasma source and a controller configured to control the plasma source to generate reactant radicals using a particular reactant gas mixture during the particular deposition phase, and sustain the plasma during a transition from the particular reactant gas mixture supplied during the particular deposition phase to a different reactant gas mixture supplied during a different deposition phase.

Abstract: A method for reducing post-annealing shrinkage of silicon dioxide film includes arranging a substrate on a substrate support in a processing chamber; setting a pressure in the processing chamber to a predetermined pressure range; setting a temperature of the substrate support to a predetermined temperature range; supplying a process gas mixture to a gas distribution device. The process gas mixture includes TEOS gas, a gas including an oxygen species, and argon gas. The argon gas comprises greater than 20% of the process gas mixture by volume. The method further includes striking plasma and depositing the film on the substrate.

Abstract: An apparatus for hanging a garment comprising a vertical suspension member hangable from a body, a garment support member suspended from the suspension member, the garment support member extending laterally from opposed sides of the suspension member; and an arcuate hood support member extending between first and second ends and having a midpoint therebetween, wherein the first and second ends of the hood support member are secured to the garment support member and wherein the midpoint of the hood support member is cantilevered upward from the garment support member. A method for hanging a garment comprising providing an apparatus for hanging a garment, positioning a shoulder portion of the garment on the garment support member with the suspension member extending above the shoulder portion, positioning a hood on the hood support member and hanging the apparatus on a support.

Abstract: An apparatus for depositing film stacks in-situ (i.e., without a vacuum break or air exposure) are described. In one example, a plasma-enhanced chemical vapor deposition apparatus configured to deposit a plurality of film layers on a substrate without exposing the substrate to a vacuum break between film deposition phases, is provided. The apparatus includes a process chamber, a plasma source and a controller configured to control the plasma source to generate reactant radicals using a particular reactant gas mixture during the particular deposition phase, and sustain the plasma during a transition from the particular reactant gas mixture supplied during the particular deposition phase to a different reactant gas mixture supplied during a different deposition phase.

Abstract: A method for cleaning a processing chamber of a substrate processing system includes supplying nitrogen trifluoride (NF3) gas to a remote plasma source (RPS); generating RPS plasma using the RPS; supplying the RPS plasma to the processing chamber; supplying NF3 gas as bypass gas to the processing chamber; striking in-situ plasma in the processing chamber while the RPS plasma is supplied; and cleaning the processing chamber during a cleaning period using both the RPS plasma and the in-situ plasma.

Abstract: A method for reducing post-annealing shrinkage of silicon dioxide film includes arranging a substrate on a substrate support in a processing chamber; setting a pressure in the processing chamber to a predetermined pressure range; setting a temperature of the substrate support to a predetermined temperature range; supplying a process gas mixture to a gas distribution device. The process gas mixture includes TEOS gas, a gas including an oxygen species, and argon gas. The argon gas comprises greater than 20% of the process gas mixture by volume. The method further includes striking plasma and depositing the film on the substrate.

Abstract: A method for cleaning a processing chamber of a substrate processing system includes supplying nitrogen trifluoride (NF3) gas to a remote plasma source (RPS); generating RPS plasma using the RPS; supplying the RPS plasma to the processing chamber; supplying NF3 gas as bypass gas to the processing chamber; striking in-situ plasma in the processing chamber while the RPS plasma is supplied; and cleaning the processing chamber during a cleaning period using both the RPS plasma and the in-situ plasma.

Abstract: An embodiment includes a bag comprising mesh and film side walls and a reinforcing strip of film; wherein (a) the mesh side wall is sealed to opposing side edges of the film side wall; (b) the reinforcing strip of film is sealed to an upper portion of the mesh side wall and to the opposing side edges of the film side wall; (c) the film side wall has a bottom extension, which is monolithic with the film side wall, extending upwardly and sealed along a lateral extent of a bottom portion of the mesh side wall; (d) the film side wall is non-coplanar with a portion of the bottom extension; (e) another portion of the bottom extension is non-coplanar with the mesh side wall; and (f) a horizontal axis intersects the bottom portion of the film side wall and three portions of the bottom extension.

Abstract: An embodiment includes a bag comprising mesh and film side walls and a reinforcing strip of film; wherein (a) the mesh side wall is sealed to opposing side edges of the film side wall; (b) the reinforcing strip of film is sealed to an upper portion of the mesh side wall and to the opposing side edges of the film side wall; (c) the film side wall has a bottom extension, which is monolithic with the film side wall, extending upwardly and sealed along a lateral extent of a bottom portion of the mesh side wall; (d) the film side wall is non-coplanar with a portion of the bottom extension; (e) another portion of the bottom extension is non-coplanar with the mesh side wall; and (f) a horizontal axis intersects the bottom portion of the film side wall and three portions of the bottom extension.

Abstract: An embodiment includes a bag comprising mesh and film side walls and a reinforcing strip of film; wherein (a) the mesh side wall is sealed to opposing side edges of the film side wall; (b) the reinforcing strip of film is sealed to an upper portion of the mesh side wall and to the opposing side edges of the film side wall; (c) the film side wall has a bottom extension, which is monolithic with the film side wall, extending upwardly and sealed along a lateral extent of a bottom portion of the mesh side wall; (d) the film side wall is non-coplanar with a portion of the bottom extension; (e) another portion of the bottom extension is non-coplanar with the mesh side wall; and (f) a horizontal axis intersects the bottom portion of the film side wall and three portions of the bottom extension.