Abstract: A method for correcting misalignments is provided. An alignment for each device of a group of devices mounted on a substrate is determined. An alignment error for the group of devices mounted on the substrate is determined based on the respective alignment for each device. One or more correction factors are calculated based on the alignment error. The alignment error is corrected based on the one or more correction factors.

Abstract: A method for correcting misalignments is provided. An alignment for each device of a group of devices mounted on a substrate is determined. An alignment error for the group of devices mounted on the substrate is determined based on the respective alignment for each device. One or more correction factors are calculated based on the alignment error. The alignment error is corrected based on the one or more correction factors.

Abstract: According to a first aspect of the invention, there is provided a lithographic method of providing an alignment mark on a layer provided on a substrate, the method including providing the alignment mark on an area of the layer which is oriented within a certain range of angles with respect to a surface of the substrate on which the layer is provided.

Abstract: According to a first aspect of the invention, there is provided a lithographic method of providing an alignment mark on a layer provided on a substrate, the method including providing the alignment mark on an area of the layer which is oriented within a certain range of angles with respect to a surface of the substrate on which the layer is provided.

Abstract: A device manufacturing method is disclosed that includes providing a substrate on a substrate table, the substrate having a target region comprising a plurality of generally planar surfaces, each surface having a different height relative to the substrate table, determining the relative heights of each generally planar surface, projecting a patterned beam of radiation onto the target region of the substrate such that the focal plane of the beam substantially coincides with the plane of one of the generally planar surfaces, moving the substrate table in a direction substantially parallel to the axis of the beam, and projecting the patterned beam of radiation onto the target region of the substrate such that the focal plane of the beam substantially coincides with the plane of another of the generally planar surfaces.

Abstract: A substrate bonding system has a first and a second substrate table for holding a first substrate and a second substrate, respectively, and a controller. The first substrate includes a first device having first contact pads and the second substrate a second device having second contact pads. The wafer bonding system is arranged to bond the first and second device in such a way that a circuit may be formed by the first and second device. The first and second substrate tables each include a position sensor arranged to measure an optical signal generated on an alignment marker of the first and second substrate, respectively. The first and second substrate tables include a first and second actuator respectively that is arranged to alter a position and orientation of the respective substrate table.

Abstract: A method is disclosed that includes introducing a substrate into a pre-aligner of a lithographic apparatus, using a detector to measure the location of an alignment mark provided on a side of the substrate which is opposite to the location of the detector, and after measurement, putting the substrate onto a substrate table of the lithographic apparatus, the substrate being positioned on the substrate table such that the alignment mark provided on the opposite side of the substrate is visible through a window of the substrate table.

Abstract: The present invention relates to a device manufacturing method wherein a plurality of front side marks are manufactured on the front side of the substrate. These marks are used to locally align the substrate when exposing. After certain processing steps, the positions of the front side marks are measured and compared with respect to their original positions. The measured position changes of the front side marks, i.e. their behaviour, can then be analyzed. The original positions and actual positions are defined with respect to a nominal grid which is defined using global alignment marks which are positioned at the back side of the substrate. Because the global alignment marks are positioned at the back side, they are not affected by any processing step.

Abstract: A second substrate, e.g. a III/V compound semiconductor, is placed on a first substrate, e.g. a wafer, in the vicinity of placement marks on the first substrate. The second substrate is exposed to patterned radiation, e.g. for the manufacture of integrated circuits.

Abstract: A substrate bonding system has a first and a second substrate table for holding a first substrate and a second substrate, respectively, and a controller. The first substrate includes a first device having first contact pads and the second substrate a second device having second contact pads. The wafer bonding system is arranged to bond the first and second device in such a way that a circuit may be formed by the first and second device. The first and second substrate tables each include a position sensor arranged to measure an optical signal generated on an alignment marker of the first and second substrate, respectively. The first and second substrate tables include a first and second actuator respectively that is arranged to alter a position and orientation of the respective substrate table.

Abstract: In a method for measuring the bonding quality of bonded substrates, such as bonded SOI wafers, a plurality of marks are created at a first side of a top substrate after, or before, the bonding of the top substrate onto a bottom substrate. Then, the positions of the plurality of marks are measured using a metrology tool. Next, for each of the marks, a difference between a measured position and an expected position is calculated. These differences can be used to determine delamination between the top substrate and the bottom substrate. By displaying a vector field representing the differences, and by not showing vectors that exceed a certain threshold, the delamination areas can be made visible.

Abstract: In an embodiment, a ring seal forming apparatus is disclosed, the apparatus including a substrate holder arranged to hold a substrate coated at least in part with resist, and a heating device configured to heat an area of the resist, relative movement between the substrate holder and heating device being possible, the movement being arranged such that, in use of the apparatus, the area of resist heated by the heating device is ring-shaped.

Abstract: A device manufacturing method is disclosed that includes providing a substrate on a substrate table, the substrate having a target region comprising a plurality of generally planar surfaces, each surface having a different height relative to the substrate table, determining the relative heights of each generally planar surface, projecting a patterned beam of radiation onto the target region of the substrate such that the focal plane of the beam substantially coincides with the plane of one of the generally planar surfaces, moving the substrate table in a direction substantially parallel to the axis of the beam, and projecting the patterned beam of radiation onto the target region of the substrate such that the focal plane of the beam substantially coincides with the plane of another of the generally planar surfaces.

Abstract: A method of measuring bonding quality of a bonded substrate having an upper substrate on top of a lower substrate, the method comprising etching one or more windows in the upper substrate such that overlay measurement alignment marks on the upper substrate may be seen by a measurement system and overlay measurement alignment marks on the lower substrate may be seen by the measurement system, using the measurement system to measure the positions of the overlay measurement alignment marks, determining the distance between corresponding overlay measurement alignment marks on the upper and lower substrates, and adjusting the determined distance to take into account an offset between the overlay measurement alignment marks on the upper substrate and the overlay measurement alignment marks on the lower substrate.

Abstract: A device manufacturing method capable of imaging structures on one side of a substrate aligned to markers on the other side, is presented herein. One embodiment of the present invention comprises providing a first substrate having first and second surfaces, patterning the first surface of the substrate with at least one reversed alignment marker, providing a protective layer over the alignment marker, and bonding the first surface of the first substrate to a second substrate. The embodiment further includes locally etching the first substrate as far as the protective layer to form a trench around the reversed alignment marker, and forming at least one patterned layer on the second surface using a lithographic projection apparatus having a front-to-backside alignment system while aligning the substrate to the alignment markers revealed in each trench.

Abstract: A device manufacturing method capable of imaging structures on both sides of a substrate, is presented herein. One embodiment of the present invention comprises a device manufacturing method that etches reversed alignment markers on a first side of a substrate to a depth of 10 ?m, the substrate is flipped over, and bonded to a carrier wafer and then lapped or ground to a thickness of 10 ?m to reveal the reversed alignment markers as normal alignment markers. The reversed alignment markers may comprise normal alignment patterns overlaid with mirror imaged alignment patterns.

Abstract: In a method of measurement according to one embodiment of the invention, a relative position of a temporary alignment mark on one side of a substrate and an alignment mark on the other side of the substrate is determined, and the temporary alignment mark is removed. Before removal of the temporary alignment mark, a relative position of that mark and another mark on the same side of the substrate may be determined. The temporary alignment mark may be formed in, e.g., an oxide layer.

Abstract: A lithographic projection apparatus is provided with an optical system built into the wafer table for producing an image of a wafer mark that is provided on the back side of the wafer. The image is located at the plane of the front side of the wafer and can be viewed by an alignment system from the front side of the wafer. Simultaneous alignment between marks on the back and front of the wafer and a mask can be performed using a pre-existing alignment system. The lithographic projection apparatus is further provided with immersion system for providing a fluid between the lens and the substrate.

Abstract: While the alignment beam is focused on a mark on the substrate table, the substrate table is moved substantially perpendicularly to the alignment beam. If the image of the mark moves relative to a reference mark, then the substrate and the alignment beam are not perpendicular. The mark on the substrate table is aligned to a plurality of reference marks. At least two substrate marks are then aligned with a single reference mark. Errors due to the inclination of the alignment beam are eliminated from the expansion and rotation values calculated for the substrate.

Abstract: A method according to one embodiment of the invention may be used in determining relative positions of developed patterns on a substrate (exposed e.g. using the step mode). Such a method uses reference marks which are located within or even superimposed on device patterns. Also disclosed is a mask of a lithographic projection apparatus including reference marks that may be used in such a method.