Abstract: Aspects of the technology described herein relate to ultrasound transducer devices including capacitive micromachined ultrasonic transducers (CMUTs) and methods for forming CMUTs in ultrasound transducer devices. Some embodiments include forming a cavity of a CMUT by forming a first layer of insulating material on a first substrate, forming a second layer of insulating material on the first layer of insulating material, and then etching a cavity in the second insulating material. A second substrate may be bonded to the first substrate to seal the cavity. The first layer of insulating material may include, for example, aluminum oxide. The first substrate may include integrated circuitry. Some embodiments include forming through-silicon vias (TSVs) in the first substrate prior to forming the first and second insulating layers (TSV-Middle process) or subsequent to bonding the first and second substrates (TSV-Last process).

Abstract: A time gain compensation (TGC) circuit for an ultrasound device includes a first amplifier having an integrating capacitor and a control circuit configured to generate a TGC control signal that controls an integration time of the integrating capacitor, thereby controlling a gain of the first amplifier. The integration time is an amount of time an input signal is coupled to the first amplifier before the input signal is isolated from the first amplifier.

Abstract: Aspects of the technology described herein relate to an ultrasound device including a first die that includes an ultrasonic transducer, a first application-specific integrated circuit (ASIC) that is bonded to the first die and includes a pulser, and a second ASIC in communication with the second ASIC that includes integrated digital receive circuitry. In some embodiments, the first ASIC may be bonded to the second ASIC and the second ASIC may include analog processing circuitry and an analog-to-digital converter. In such embodiments, the second ASIC may include a through-silicon via (TSV) facilitating communication between the first ASIC and the second ASIC. In some embodiments, SERDES circuitry facilitates communication between the first ASIC and the second ASIC and the first ASIC includes analog processing circuitry and an analog-to-digital converter. In some embodiments, the technology node of the first ASIC is different from the technology node of the second ASIC.

Abstract: Aspects of the technology described herein relate to an ultrasound device including a first die that includes an ultrasonic transducer, a first application-specific integrated circuit (ASIC) that is bonded to the first die and includes a pulser, and a second ASIC in communication with the second ASIC that includes integrated digital receive circuitry. In some embodiments, the first ASIC may be bonded to the second ASIC and the second ASIC may include analog processing circuitry and an analog-to-digital converter. In such embodiments, the second ASIC may include a through-silicon via (TSV) facilitating communication between the first ASIC and the second ASIC. In some embodiments, SERDES circuitry facilitates communication between the first ASIC and the second ASIC and the first ASIC includes analog processing circuitry and an analog-to-digital converter. In some embodiments, the technology node of the first ASIC is different from the technology node of the second ASIC.

Abstract: Apparatus and methods for producing ultrashort optical pulses are described. A high-power, solid-state, passively mode-locked laser can be manufactured in a compact module that can be incorporated into a portable instrument for biological or chemical analyses. The pulsed laser may produce sub-100-ps optical pulses at a repetition rate commensurate with electronic data-acquisition rates. The optical pulses may excite samples in reaction chambers of the instrument, and be used to generate a reference clock for operating signal-acquisition and signal-processing electronics of the instrument.

Abstract: A semiconductor device, comprising a first field effect transistor (FET) connected in series to a second FET, and a third FET connected in series to the first FET and the second FET. The semiconductor device further includes bias circuitry coupled to the first FET and the second FET, and an output conductor coupled to a terminal of the second FET, wherein the output conductor obtains an output signal from the second FET that is independent of the first FET.

Abstract: Apparatus and methods for analyzing single molecule and performing nucleic acid sequencing. An apparatus can include an assay chip that includes multiple pixels with sample wells configured to receive a sample, which, when excited, emits emission energy; at least one element for directing the emission energy in a particular direction; and a light path along which the emission energy travels from the sample well toward a sensor. The apparatus also includes an instrument that interfaces with the assay chip. The instrument includes an excitation light source for exciting the sample in each sample well; a plurality of sensors corresponding the sample wells. Each sensor may detect emission energy from a sample in a respective sample well. The instrument includes at least one optical element that directs the emission energy from each sample well towards a respective sensor of the plurality of sensors.

Abstract: Aspects of the disclosure described herein related to packaging an ultrasound-on-a-chip. In some embodiments, an apparatus includes an ultrasound-on-a-chip that has through-silicon vias (TSVs) and an interposer coupled to the ultrasound-on-a-chip and including vias, where the ultrasound-on-a-chip is coupled to the interposer such that the TSVs in the ultrasound-on-a-chip are electrically connected to the vias in the interposer. In some embodiments, an apparatus includes an ultrasound-on-a-chip having bond pads, an interposer that has bond pads and that is coupled to the ultrasound-on-a-chip, and wirebonds extending from the bond pads on the ultrasound-on-a-chip to the bond pads on the interposer.

Abstract: Apparatus and techniques for electrokinetic loading of samples of interest into sub-micron-scale reaction chambers are described. Embodiments include an integrated device and related apparatus for analyzing samples in parallel. The integrated device may include at least one reaction chamber formed through a surface of the integrated device and configured to receive a sample of interest, such as a molecule of nucleic acid. The integrated device may further include electrodes patterned adjacent to the reaction chamber that produce one or more electric fields that assist loading the sample into the reaction chamber. The apparatus may further include a sample reservoir having a fluid seal with the surface of the integrated device and configured to hold a suspension containing the samples.

Abstract: Complementary metal oxide semiconductor (CMOS) ultrasonic transducers (CUTs) and methods for forming CUTs are described. The CUTs may include monolithically integrated ultrasonic transducers and integrated circuits for operating in connection with the transducers. The CUTs may be used in ultrasound devices such as ultrasound imaging devices and/or high intensity focused ultrasound (HIFU) devices.

Abstract: System and methods for analyzing single molecules and performing nucleic acid sequencing. An integrated device includes multiple pixels with sample wells configured to receive a sample, which when excited, emits radiation. The integrated device includes at least one waveguide configured to propagate excitation energy to the sample wells from a region of the integrated device configured to couple with an excitation energy source. A pixel may also include at least one element for directing the emission energy towards a sensor within the pixel. The system also includes an instrument that interfaces with the integrated device. The instrument may include an excitation energy source for providing excitation energy to the integrated device by coupling to an excitation energy coupling region of the integrated device.

Abstract: Micromachined ultrasonic transducers formed in complementary metal oxide semiconductor (CMOS) wafers are described, as are methods of fabricating such devices. A metallization layer of a CMOS wafer may be removed by sacrificial release to create a cavity of an ultrasonic transducer. Remaining layers may form a membrane of the ultrasonic transducer.

Abstract: An ultrasonic transducer includes a membrane, a bottom electrode, and a plurality of cavities disposed between the membrane and the bottom electrode, each of the plurality of cavities corresponding to an individual transducer cell. Portions of the bottom electrode corresponding to each individual transducer cell are electrically isolated from one another. Each portion of the bottom electrode corresponds to each individual transducer that cell further includes a first bottom electrode portion and a second bottom electrode portion, the first and second bottom electrode portions electrically isolated from one another.

Abstract: Aspects of the technology described herein relate to an ultrasound device including a first die that includes an ultrasonic transducer, a first application-specific integrated circuit (ASIC) that is bonded to the first die and includes a pulser, and a second ASIC in communication with the second ASIC that includes integrated digital receive circuitry. In some embodiments, the first ASIC may be bonded to the second ASIC and the second ASIC may include analog processing circuitry and an analog-to-digital converter. In such embodiments, the second ASIC may include a through-silicon via (TSV) facilitating communication between the first ASIC and the second ASIC. In some embodiments, SERDES circuitry facilitates communication between the first ASIC and the second ASIC and the first ASIC includes analog processing circuitry and an analog-to-digital converter. In some embodiments, the technology node of the first ASIC is different from the technology node of the second ASIC.

Abstract: A time gain compensation (TGC) circuit for an ultrasound device includes a first amplifier having an integrating capacitor and a control circuit configured to generate a TGC control signal that controls an integration time of the integrating capacitor, thereby controlling a gain of the first amplifier. The integration time is an amount of time an input signal is coupled to the first amplifier before the input signal is isolated from the first amplifier.

Abstract: System and methods for analyzing single molecules and performing nucleic acid sequencing. An integrated device includes multiple pixels with sample wells configured to receive a sample, which when excited, emits radiation. The integrated device includes at least one waveguide configured to propagate excitation energy to the sample wells from a region of the integrated device configured to couple with an excitation energy source. A pixel may also include at least one element for directing the emission energy towards a sensor within the pixel. The system also includes an instrument that interfaces with the integrated device. The instrument may include an excitation energy source for providing excitation energy to the integrated device by coupling to an excitation energy coupling region of the integrated device.

Abstract: System and methods for analyzing single molecules and performing nucleic acid sequencing. An integrated device includes multiple pixels with sample wells configured to receive a sample, which when excited, emits radiation. The integrated device includes at least one waveguide configured to propagate excitation energy to the sample wells from a region of the integrated device configured to couple with an excitation energy source. A pixel may also include at least one element for directing the emission energy towards a sensor within the pixel. The system also includes an instrument that interfaces with the integrated device. The instrument may include an excitation energy source for providing excitation energy to the integrated device by coupling to an excitation energy coupling region of the integrated device.

Abstract: A sensor device includes a sensor array and a flow cell in fluid communication with the sensor array. Bias circuitry apply bias arrangements to the sensor array to produce sensor data. Peripheral circuitry coupled to the bias circuitry produces streams of data from the sensor array, the peripheral circuitry having an active mode and an idle mode. Logic to switch the peripheral circuitry between the active mode and the idle mode to control power consumption is provided. A temperature sensor may be included, and the logic can operate with feedback to switch between the active mode and the idle mode to maintain the temperature within an operating range.

Abstract: A variable current trans-impedance amplifier (TIA) for an ultrasound device is described. The TIA may be coupled to an ultrasonic transducer to amplify an output signal of the ultrasonic transducer representing an ultrasound signal received by the ultrasonic transducer. During acquisition of the ultrasound signal by the ultrasonic transducer, one or more current sources in the TIA may be varied.

Abstract: Apparatus and methods for producing ultrashort optical pulses are described. A high-power, solid-state, passively mode-locked laser can be manufactured in a compact module that can be incorporated into a portable instrument. The mode-locked laser can produce sub-50-ps optical pulses at a repetition rates between 200 MHz and 50 MHz, rates suitable for massively parallel data-acquisition. The optical pulses can be used to generate a reference clock signal for synchronizing data-acquisition and signal-processing electronics of the portable instrument.