Abstract: Fuel gas compositions for use in metal fabrication are provided comprising fuel gases comprising a base fuel gas mixed with from about 1% to less than 30% hydrogen.

Abstract: The present invention relates generally to welding gas compositions used as shielding gases in an electric arc welding process. More particularly, the invention is directed a shielding gas compositions used in gas metal or tungsten metal arc welding processes for welding aluminum or aluminum alloy containing work pieces. The compositions comprise from 200 to less than 400 ppm oxygen; from 200 to less than 400 ppm of a second gas selected from nitrous oxide, nitrogen, and combinations thereof; and the remainder being an inert gas preferably selected from argon, helium, and mixtures thereof.

Abstract: Fuel gas compositions for use in metal fabrication are provided comprising fuel gases comprising a base fuel gas mixed with from about 1% to less than 30% hydrogen.

Abstract: A shielding gas, apparatus, and method are provided for laser welding workpieces comprising aluminum or aluminum alloy. The shielding gas includes argon (Ar); and active gas components in a range of 0.5% to 3% by volume of the shielding gas. The active gas components include a combination of oxygen (O2) and at least one of nitrous oxide (N2O) and nitrogen (N2).

Abstract: The present invention relates generally to welding gas compositions used as shielding gases in an electric arc welding process. More particularly, the invention is directed a shielding gas compositions used in gas metal or tungsten metal arc welding processes for welding aluminum or aluminum alloy containing work pieces. The compositions comprise from 200 to less than 400 ppm oxygen; from 200 to less than 400 ppm of a second gas selected from nitrous oxide, nitrogen, and combinations thereof; and the remainder being an inert gas preferably selected from argon, helium, and mixtures thereof.

Abstract: The present invention relates generally to welding gas compositions used as shielding gases in an electric arc welding process. More particularly, the invention is directed a shielding gas compositions used in gas metal or tungsten metal arc welding processes for welding aluminum or aluminum alloy containing work pieces. The compositions comprise from 200 to less than 400 ppm oxygen; from 200 to less than 400 ppm of a second gas selected from nitrous oxide, nitrogen, and combinations thereof; and the remainder being an inert gas preferably selected from argon, helium, and mixtures thereof.

Abstract: The present invention relates generally to welding gas compositions used as shielding gases in an electric arc welding process. More particularly, the invention is directed a shielding gas compositions used in gas metal or tungsten metal arc welding processes for welding aluminum or aluminum alloy containing work pieces. The compositions comprise from 200 to less than 400 ppm oxygen; from 200 to less than 400 ppm of a second gas selected from nitrous oxide, nitrogen, and combinations thereof; and the remainder being an inert gas preferably selected from argon, helium, and mixtures thereof.

Abstract: A composition is provided in the present invention for polishing a composite semiconductor structure containing a metal layer (such as tungsten, aluminum, or copper), a barrier layer (such as tantalum, tantalum nitride, titanium, or titanium nitride), and an insulating layer (such as SiO2). The composition comprises an aqueous medium, an oxidant, an organic polymer that attenuates removal of the oxide film. The composition may optionally comprise a complexing agent and/or a dispersant.

Abstract: A method for chemical mechanical planarization of a semiconductor structure comprised of a conductive metal interconnect layer, a barrier or liner film, and an underlying dielectric layer using a two-step polishing process is provided. In the first step, the conducting metal overburden is substantially removed with little removal of the barrier or liner layer or the underlying dielectric structure. In the second step, the barrier layer is removed with little removal of the underlying dielectric layer. Five different methods and associated slurry compositions are described for the second polishing step, each adjusted to the state of the wafer following the first step of polishing. By using the appropriate method, the integrity of the remaining semiconductor structure can be substantially retained.

Abstract: A composition is provided in the present invention for polishing a composite semiconductor structure containing a metal layer (such as tungsten, aluminum, or copper), a barrier layer (such as tantalum, tantalum nitride, titanium, or titanium nitride), and an insulating layer (such as SiO2). The composition comprises an aqueous medium, an oxidant, an organic polymer that attenuates removal of the oxide film. The composition may optionally comprise a complexing agent and/or a dispersant.

Abstract: A composition is provided in the present invention for polishing a composite semiconductor structure containing a metal layer (such as tungsten, aluminum, or copper), a barrier layer (such as tantalum, tantalum nitride, titanium, or titanium nitride), and an insulating layer (such as SiO2). The composition comprises an aqueous medium, an oxidant, an organic polymer that attenuates removal of the oxide film. The composition may optionally comprise a complexing agent and/or a dispersant.

Abstract: A two-step method for chemical mechanical polishing of a semiconductor substrate having successive layers, comprised of, a metal layer, an underlying barrier film and an underlying dielectric layer. The first polishing step is performed utilizing a slurry composition selective to the metal in the metal layer, to remove the metal at a high removal rate during polishing, and the second polishing step is performed utilizing a slurry composition selective to the barrier film and least selective to the metal layer and the underlying dielectric layer. In an alternate embodiment, the second polishing step is performed with a slurry equally selective to the barrier layer and the underlying dielectric layer and least selective to the metal of the metal layer, to remove the barrier layer at a high removal rate during polishing, and level a surface of the dielectric layer to the surface of the metal interconnection structure in the underlying dielectric layer.

Abstract: A composition is provided in the present invention for polishing a composite composite semiconductor structure containing a metal layer (such as tungsten, aluminum, or copper), a barrier layer (such as tantalum, tantalum nitride, titanium, or titanium nitride), and an insulating layer (such as SiO2). The composition comprises an aqueous medium, an abrasive, an oxidant, an organic polymer that attenuates removal of the oxide film having a degree of polymerization of at least 5 and having a plurality of moieties having affinity to surface groups contained on silicon dioxide surfaces. The composition may optionally comprise a complexing agent and/or a dispersant.

Abstract: A composition is provided in the present invention for polishing a composite semiconductor structure containing a metal layer (such as tungsten, aluminum, or copper), a barrier layer (such as tantalum, tantalum nitride, titanium, or titanium nitride), and an insulating layer (such as SiO2). The composition comprises an aqueous medium, an oxidant, an organic polymer that attenuates removal of the oxide film. The composition may optionally comprise a complexing agent and/or a dispersant.

Abstract: An improved slurry composition and methods of using it are provided for final polishing of silicon wafers. The composition comprises water, submicron silica particles at about 0.02 to about 0.5 percent by weight of this composition, a salt at a concentration of about 100 to about 1000 ppm, an amine compound at a concentration sufficient to effect a composition pH of about 8 to about 11, and a polyelectrolyte dispersion agent at a concentration of about 20 to about 500 ppm, wherein the composition has a total sodium and potassium content below about 1 ppm and an iron, nickel and copper content each below about 0.1 ppm, all ppm being parts per million by weight of the composition.