Abstract: A method and apparatus for removing photoresist from a substrate such as a semiconductor wafer are provided. The method includes placing the substrate in a reaction chamber containing an oxidizing gas that includes an ozone/oxygen mixture. At the same time, a UV laser beam is directed across the surface of the photoresist for driving an oxidation reaction. Specifically, the oxone decomposes into atomic and diatomic oxygen which react with carbon in the photoresist to form gaseous by-products such as (CO) and (CO.sub.2). These by-products are continuously exhausted from the reaction chamber by an evacuation pump. The method can be performed in stages wherein a first oxidizing gas comprising (O.sub.2) is used to remove a bulk of the photoresist and a second oxidizing gas comprising (O.sub.3 /O.sub.2) is used to remove a remaining portion of the photoresist.