Patents by Inventor Keith Quoc Lao

Keith Quoc Lao has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Forming vias and trenches for self-aligned contacts in a semiconductor structure
    Patent number: 9287162
    Abstract: A semiconductor structure is formed to include a non-conductive layer with at least one metal line, a first dielectric layer, a first stop layer, a second dielectric layer, a second stop layer, a third stop layer and a fourth stop layer. A first photoresist layer is formed over the upper stop layer to develop at least one via pattern. The structure is selectively etched to form the via pattern in the third stop layer through the fourth stop layer. The first photoresist layer is then removed. A second photoresist layer is formed over the upper stop layer to develop a plurality of trench patterns, each of the trench pattern comprising a via-trench portion in which the trench pattern is formed above the via pattern, and a trench portion that is remaining part of the trench pattern.
    Type: Grant
    Filed: January 10, 2013
    Date of Patent: March 15, 2016
    Assignees: Samsung Austin Semiconductor, L.P., Samsung Electronics Co., Ltd.
    Inventor: Keith Quoc Lao
  • FORMING VIAS AND TRENCHES FOR SELF-ALIGNED CONTACTS IN A SEMICONDUCTOR STRUCTURE
    Publication number: 20140191409
    Abstract: A semiconductor structure is formed to include a non-conductive layer with at least one metal line, a first dielectric layer, a first stop layer, a second dielectric layer, a second stop layer, a third stop layer and a fourth stop layer. A first photoresist layer is formed over the upper stop layer to develop at least one via pattern. The structure is selectively etched to form the via pattern in the third stop layer through the fourth stop layer. The first photoresist layer is then removed. A second photoresist layer is formed over the upper stop layer to develop a plurality of trench patterns, each of the trench pattern comprising a via-trench portion in which the trench pattern is formed above the via pattern, and a trench portion that is remaining part of the trench pattern.
    Type: Application
    Filed: January 10, 2013
    Publication date: July 10, 2014
    Applicants: SAMSUNG AUSTIN SEMICONDUCTOR, L.P., SAMSUNG ELECTRONICS CO., LTD.
    Inventor: Keith Quoc Lao