Patents by Inventor Keith R. McIntosh

Keith R. McIntosh has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Use of doped silicon dioxide in the fabrication of solar cells
    Patent number: 7135350
    Abstract: In one embodiment, a method of forming doped regions in a substrate of a back side contact solar cell includes the steps of depositing a first doped oxide layer on a back side of a substrate, depositing a first undoped oxide layer over the first doped oxide layer, diffusing a first dopant from the first doped oxide layer into the substrate to form a first doped region in the substrate, and diffusing a second dopant into the substrate by way of a front side of the substrate, wherein the diffusion of the first dopant and the second dopant into the substrate are performed in-situ. The method may further include the steps of patterning the first doped and undoped oxide layers to expose portions of the back side of the substrate and depositing a second doped and undoped oxide layers on the back side of the substrate.
    Type: Grant
    Filed: January 9, 2006
    Date of Patent: November 14, 2006
    Assignee: Sunpower Corporation
    Inventors: David D. Smith, Michael J. Cudzinovic, Keith R. McIntosh, Bharatkumar Gamanlal Mehta
  • Use of doped silicon dioxide in the fabrication of solar cells
    Patent number: 6998288
    Abstract: In one embodiment, a method of forming doped regions in a substrate of a back side contact solar cell includes the steps of depositing a first doped oxide layer on a back side of a substrate, depositing a first undoped oxide layer over the first doped oxide layer, diffusing a first dopant from the first doped oxide layer into the substrate to form a first doped region in the substrate, and diffusing a second dopant into the substrate by way of a front side of the substrate, wherein the diffusion of the first dopant and the second dopant into the substrate are performed in-situ. The method may further include the steps of patterning the first doped and undoped oxide layers to expose portions of the back side of the substrate and depositing a second doped and undoped oxide layers on the back side of the substrate.
    Type: Grant
    Filed: September 21, 2004
    Date of Patent: February 14, 2006
    Assignee: Sunpower Corporation
    Inventors: David D. Smith, Michael J. Cudzinovic, Keith R. McIntosh, Bharatkumar Gamanlal Mehta