Abstract: A pixel sensor element (200) including a photodetector (201) and a storage assembly having N storage arrays (205), each having an input shift register (207) and an output shift register (215) each with a number M of storage cells arranged in a column, and a storage shift register (211) with a number M of rows of storage cells, each row comprising a number P of storage cells, for signal transfer from the input shift register (207) to the output shift register (215). A number N of independently driveable signal transfer regions (203) transfer the signal from the photodetector (201) to a first cell (210) of one of a respective one of the input shift registers (207). A number N of signal read-out regions (219) read the signal from a last cell (217) of a respective one of the output shift registers (215). N is 2 or more. M is 1 or more. P is 1 or more. Image sensors, imaging devices, storage assemblies, and methods are also provided.

Abstract: A pixel sensor element (200) including a photodetector (201) and a storage assembly having N storage arrays (205), each having an input shift register (207) and an output shift register (215) each with a number M of storage cells arranged in a column, and a storage shift register (207) to the output shift register (215). A number N of independently driveable signal transfer regions (203) transfer the signal from the photodetector (201) to a first cell (210) of one of a respective one of the input shift registers (207). A number N of signal read-out regions (219) read the signal from a last cell (217) of a respective one of the output shift registers (215). N is 2 or more. M is 1 or more. P is 1 or more. Image sensors, imaging devices, storage assemblies, and methods are also provided.