Patents by Inventor Keith T. Kwietniak
Keith T. Kwietniak has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 7863189Abstract: Methods are provided for fabricating silicon carriers with conductive through-vias that allow high-yield manufacture of silicon carrier with low defect density. In particular, methods are provided which enable fabrication of silicon carries with via diameters such as 1 to 10 microns in diameter for a vertical thickness of less than 10 micrometers to greater than 300 micrometers, which are capable robust to thermal-mechanical stresses during production to significantly minimize the thermal mechanical movement at the via sidewall interface between the silicon, insulator, liner and conductor materials.Type: GrantFiled: January 5, 2007Date of Patent: January 4, 2011Assignee: International Business Machines CorporationInventors: Veeraraghaven S. Basker, John Michael Cotte, Hariklia Deligianni, John Ulrich Knickerbocker, Keith T. Kwietniak
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Patent number: 7678258Abstract: An improved method of stabilizing wet chemical baths is disclosed. Typically such baths are used in processes for treating workpieces, for example, plating processes for plating metal onto substrates. In particular, the present invention relates to copper plating baths. More particularly, the present invention relates to the stability of copper plating baths. More particularly, the present invention relates to prevention of void formation by monitoring the accumulation of deleterious by-products in copper plating baths.Type: GrantFiled: July 10, 2003Date of Patent: March 16, 2010Assignee: International Business Machines CorporationInventors: Panayotis Andricacos, Dean S. Chung, Hariklia Deligianni, James E. Fluegel, Keith T. Kwietniak, Peter S. Locke, Darryl D. Restaino, Soon-Cheon Seo, Philippe M. Vereecken, Erick G. Walton
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Publication number: 20080164573Abstract: Methods are provided for fabricating silicon carriers with conductive through-vias that allow high-yield manufacture of silicon carrier with, low defect density. In particular, methods are provided which enable fabrication of silicon, carries with via diameters such as 1 to 10 microns in diameter for a vertical thickness of less than 10 micrometers to greater than 300 micrometers, which are capable robust to thermal-mechanical stresses during production to significantly minimize the thermal mechanical movement at the via sidewall interface between the silicon, insulator, liner and conductor materials.Type: ApplicationFiled: January 5, 2007Publication date: July 10, 2008Inventors: Veeraraghaven S. Basker, John Michael Cotte, Hariklia Deligianni, John Ulrich Knickerbocker, Keith T. Kwietniak
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Patent number: 7227265Abstract: Interconnect structures with copper conductors being at least substantially free of internal seams or voids are obtained employing an electroplating copper bath containing dissolved cupric salt wherein the concentration of the salt is at least about 0.4 molar and up to about 0.5 molar concentration of an acid. Also provided are copper damascene structures having an aspect ratio of greater than about 3 and a width of less than about 0.275 ?m and via openings filled with electroplated copper than is substantially free of internal seams or voids.Type: GrantFiled: March 29, 2004Date of Patent: June 5, 2007Assignee: International Business Machines CorporationInventors: Panayotis C. Andricacos, Steven H. Boettcher, Dean S. Chung, Hariklia Deligianni, James E. Fluegel, Wilma Jean Horkans, Keith T. Kwietniak, Peter S. Locke, Christopher C. Parks, Soon-Cheon Seo, Andrew H. Simon, Erick G. Walton
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Patent number: 7101784Abstract: The invention provides a method of forming a wiring layer in an integrated circuit structure that forms an organic insulator, patterns the insulator, deposits a liner on the insulator, and exposes the structure to a plasma to form pores in the insulator in regions next to the liner. The liner is formed thin enough to allow the plasma to pass through the liner and form the pores in the insulator. During the plasma processing, the plasma passes through the liner without affecting the liner. After the plasma processing, additional liner material may be deposited. After this, a conductor is deposited and excess of portions of the conductor are removed from the structure such that the conductor only remains within patterned portions of the insulator. This method produces an integrated circuit structure that has an organic insulator having patterned features, a liner lining the patterned features, and a conductor filling the patterned features.Type: GrantFiled: May 10, 2005Date of Patent: September 5, 2006Assignee: International Business Machines CorporationInventors: Lawrence A. Clevenger, Stephen E. Greco, Keith T. Kwietniak, Soon-Cheon Seo, Chih-Chao Yang, Yun-Yu Wang, Kwong H. Wong
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Patent number: 6974531Abstract: A conductive material is electroplated onto a platable resistive metal barrier layer(s) employing a plating bath optionally comprising a super filling additive and a suppressor, and by changing the current or voltage as a function of the area of plated metal. A structure is also provided that comprises a substrate, a platable metal barrier layer(s) located on the substrate and a relatively continuous uniform electroplated layer of a conductive material located on the platable resistive metal barrier layer.Type: GrantFiled: October 15, 2002Date of Patent: December 13, 2005Assignee: International Business Machines CorporationInventors: Panayotis Andricacos, Hariklia Deligianni, Wilma Jean Horkans, Keith T. Kwietniak, Michael Lane, Sandra G. Malhotra, Fenton Read McFeely, Conal Murray, Kenneth P. Rodbell, Philippe M. Vereecken
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Patent number: 6921978Abstract: The invention provides a method of forming a wiring layer in an integrated circuit structure that forms an organic insulator, patterns the insulator, deposits a liner on the insulator, and exposes the structure to a plasma to form pores in the insulator in regions next to the liner. The liner is formed thin enough to allow the plasma to pass through the liner and form the pores in the insulator. During the plasma processing, the plasma passes through the liner without affecting the liner. After the plasma processing, additional liner material may be deposited. After this, a conductor is deposited and excess of portions of the conductor are removed from the structure such that the conductor only remains within patterned portions of the insulator. This method produces an integrated circuit structure that has an organic insulator having patterned features, a liner lining the patterned features, and a conductor filling the patterned features.Type: GrantFiled: May 8, 2003Date of Patent: July 26, 2005Assignee: International Business Machines CorporationInventors: Lawrence A. Clevenger, Stephen E. Greco, Keith T. Kwietniak, Soon-Cheon Seo, Chih-Chao Yang, Yun-Yu Wang, Kwong H. Wong
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Publication number: 20040224494Abstract: The invention provides a method of forming a wiring layer in an integrated circuit structure that forms an organic insulator, patterns the insulator, deposits a liner on the insulator, and exposes the structure to a plasma to form pores in the insulator in regions next to the liner. The liner is formed thin enough to allow the plasma to pass through the liner and form the pores in the insulator. During the plasma processing, the plasma passes through the liner without affecting the liner. After the plasma processing, additional liner material may be deposited. After this, a conductor is deposited and excess of portions of the conductor are removed from the structure such that the conductor only remains within patterned portions of the insulator. This method produces an integrated circuit structure that has an organic insulator having patterned features, a liner lining the patterned features, and a conductor filling the patterned features.Type: ApplicationFiled: May 8, 2003Publication date: November 11, 2004Applicant: International Business Machines CorporationInventors: Lawrence A. Clevenger, Stephen E. Greco, Keith T. Kwietniak, Soon-Cheon Seo, Chih-Chao Yang, Yun-Yu Wang, Kwong H. Wong
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Publication number: 20040178077Abstract: Interconnect structures with copper conductors being at least substantially free of internal seams or voids are obtained employing an electroplating copper bath containing dissolved cupric salt wherein the concentration of the salt is at least about 0.4 molar and up to about 0.5 molar concentration of an acid. Also provided are copper damascene structures having an aspect ratio of greater than about 3 and a width of less than about 0.275 &mgr;m and via openings filled with electroplated copper than is substantially free of internal seams or voids.Type: ApplicationFiled: March 29, 2004Publication date: September 16, 2004Applicant: International Business Machines CorporationInventors: Panayotis C. Andricacos, Steven H. Boettcher, Dean S. Chung, Hariklia Deligianni, James E. Fluegel, Wilma Jean Horkans, Keith T. Kwietniak, Peter S. Locke, Christopher C. Parks, Soon-Cheon Seo, Andrew H. Simon, Erick G. Walton
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Publication number: 20040178078Abstract: Interconnect structures with copper conductors being at least substantially free of internal seams or voids are obtained employing an electroplating copper bath containing dissolved cupric salt wherein the concentration of the salt is at least about 0.4 molar and up to about 0.5 molar concentration of an acid. Also provided are copper damascene structures having an aspect ratio of greater than about 3 and a width of less than about 0.275 &mgr;m and via openings filled with electroplated copper than is substantially free of internal seams or voids.Type: ApplicationFiled: March 29, 2004Publication date: September 16, 2004Applicant: International Business Machines CorporationInventors: Panayotis C. Andricacos, Steven H. Boettcher, Dean S. Chung, Hariklia Deligianni, James E. Fluegel, Wilma Jean Horkans, Keith T. Kwietniak, Peter S. Locke, Christopher C. Parks, Soon-Cheon Seo, Andrew H. Simon, Erick G. Walton
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Publication number: 20040077140Abstract: A uniformly thick oxide film on a substrate is formed by using an anodization apparatus which deposits a blanket precursor film on a surface of a substrate; provides electrical contact to the precursor film; moves the precursor film into contact with an electrolyte solution such that substantially all electrically conductive surfaces, e.g., pin contacts, the substrate edge and a backside of the substrate are electrically isolated from the electrolyte; ensures that the surface of the precursor film on the substrate is in direct contact with the electrolyte solution; and which applies an anodizing current and/or voltage between the precursor film and a counter electrode so as to compensate for a voltage drop resulting from the presence of the electrolyte.Type: ApplicationFiled: October 16, 2002Publication date: April 22, 2004Inventors: Panayotis C. Andricacos, Roy Arthur Carruthers, Stephan Alan Cohen, John Michael Cotte, Lynne M. Gignac, Kenneth Jay Stein, Keith T. Kwietniak, Seshadri Subbanna, Horatio Seymour Wildman, David Earle Seeger, Andrew Herbert Simon
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Publication number: 20040069648Abstract: A conductive material is electroplated onto a platable resistive metal barrier layer(s) employing a plating bath optionally comprising a super filling additive and a suppressor, and by changing the current or voltage as a function of the area of plated metal. A structure is also provided that comprises a substrate, a platable metal barrier layer(s) located on the substrate and a relatively continuous uniform electroplated layer of a conductive material located on the platable resistive metal barrier layer.Type: ApplicationFiled: October 15, 2002Publication date: April 15, 2004Applicant: International Business Machines CorporationInventors: Panayotis Andricacos, Hariklia Deligianni, Wilma Jean Horkans, Keith T. Kwietniak, Michael Lane, Sandra G. Malhotra, Fenton Read McFeely, Conal Murray, Kenneth P. Rodbell, Philippe M. Vereecken
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Patent number: 6592747Abstract: Organic addition agents in copper plating baths are monitored by diluting a sample of the bath with sulfuric acid and hydrochloric acid and optionally a cupric salt. The diluting provides a bath having conventional concentrations of cupric ion, sulfuric acid and hydrochloric acid; and adjusted concentrations of the organic addition agents of 1/X of their original values in the sample; where X is the dilution factor. CVS techniques are used to determine concentrations of organic addition agents.Type: GrantFiled: June 18, 2001Date of Patent: July 15, 2003Assignee: International Business Machines CorporationInventors: Wilma Jean Horkans, Keith T. Kwietniak, Peter S. Locke
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Publication number: 20030000850Abstract: Organic addition agents in copper plating baths are monitored by diluting a sample of the bath with sulfuric acid and hydrochloric acid and optionally a cupric salt. The diluting provides a bath having conventional concentrations of cupric ion, sulfuric acid and hydrochloric acid; and adjusted concentrations of the organic addition agents of 1/X of their original values in the sample; where X is the dilution factor. CVS techniques are used to determine concentrations of organic addition agents.Type: ApplicationFiled: June 18, 2001Publication date: January 2, 2003Inventors: Wilma Jean Horkans, Keith T. Kwietniak, Peter S. Locke
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Publication number: 20020027082Abstract: A method of reducing etching of a seed layer by a plating solution. Prior to introducing the semiconductor wafer with the seed layer into the plating solution, the etching power of the plating solution is diminished.Type: ApplicationFiled: October 23, 2001Publication date: March 7, 2002Inventors: Panayotis C. Andricacos, W. Jean Horkans, Keith T. Kwietniak, Peter S. Locke, Cyprian E. Uzoh
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Patent number: 6331237Abstract: A method of reducing etching of a seed layer by a plating solution. Prior to introducing the semiconductor wafer with the seed layer into the plating solution, the etching power of the plating solution is diminished.Type: GrantFiled: September 1, 1999Date of Patent: December 18, 2001Assignee: International Business Machines CorporationInventors: Panayotis C. Andricacos, W. Jean Horkans, Keith T. Kwietniak, Peter S. Locke, Cyprian E. Uzoh